Abstract: An adhesive member includes: a conductive particle layer including a plurality of conductive particles; a non-conductive layer disposed on the conductive particle layer; and a screening layer interposed between the conductive particle layer and the non-conductive layer and includes a plurality of screening members spaced apart from each other.

Abstract: Provided is a photosensitive resin composition including a reactive unsaturated compound, an alkali soluble resin, an initiator, and a pigment. The reactive unsaturated compound is selected to cause the composition to exhibit high-resolution pattern properties that facilitate forming a pixel defining film in a display device. The reactive unsaturated compound may be an acryl-based compound having at least three ethylenically unsaturated double bond groups in molecules and having a viscosity of about 200 mPa s to about 280 mPa s at 40° C. A display device including such pixel defining film is also presented.

Abstract: Disclosed is a blankmask for EUV lithography, including a reflective film, a capping film and a phase shift film which are sequentially formed on a substrate. The phase shift film includes a first layer containing niobium (Nb) and chrome (Cr), and a second layer containing tantalum (Ta) and silicon (Si). In the first layer, the content of niobium (Nb) ranges from 20 to 50 at %, and the content of chrome (Cr) content ranges from 10 to 40 at %. The blankmask can implement an excellent resolution and NILS, and implement a low DtC.

Abstract: Disclosed is a blankmask for EUV lithography, including a reflective film, a capping film, an etch stop film, a phase shift film, and a hard mask film which are sequentially formed on a substrate. The phase shift film contains ruthenium (Ru), and the etch stop film contains chrome (Cr) and niobium (Nb). In the etch stop film, the content of niobium (Nb) ranges from 20 to 50 at %, and the content of chrome (Cr) ranges from 10 to 40 at %. The hard mask film contains tantalum (Ta) and oxygen (O). The content of tantalum (Ta) in the hard mask film is higher than or equal to 50 at %. With the blankmask, it is possible to implement a high resolution and NILS during wafer printing, and implement DtC.

Abstract: A multilayer ceramic electronic component includes a ceramic body comprising dielectric layers and first and second internal electrodes laminatedly disposed in a third direction with respective dielectric layers interposed therebetween, and first electrode and second external electrodes disposed on both surfaces of the ceramic body in the first direction and electrically connected to the first and second internal electrodes. When an absolute value of a horizontal angle in the second direction of the first internal electrode with respect to the first surface of the ceramic body is referred to a first angle of the internal electrode, a total sum of the first angles is less than 10°.

Abstract: The present disclosure relates to an antenna apparatus for a base station and an adapter thereof and particularly comprises: an antenna module vertically installed to be spaced forward from a support pole by a predetermined distance so as to have a distancing space therebetween; an RRH installed on the antenna module to be positioned in the distancing space, wherein one of the upper end and the lower end thereof is hinge-coupled to the antenna module and the other of the upper end and the lower end thereof is attached to or detached from a part of the antenna module to enable electrical signal connection or disconnection while being rotated around the hinge; and an adapter for mediating the electrical signal connection and disconnection between the antenna module and the RRH. Therefore, the present disclosure provides advantages of reducing installation time and installation costs.

Abstract: Provided is that a negative active material for a rechargeable lithium battery, a negative electrode for a rechargeable lithium battery including the same, and a rechargeable lithium including the same, and the negative active material for a rechargeable lithium battery includes an agglomerated product of silicon-based materials comprising a silicon particle, a lithium silicate positioned on a surface of the silicon particle, a first amorphous carbon surrounded on the silicon particle and the lithium silicate; and a second amorphous carbon positioned on the agglomerated product.

Abstract: A semiconductor device includes a substrate, a gate trench in the substrate, a gate insulating film in the gate trench, a titanium nitride (TiN)-lower gate electrode film on the gate insulating film, the titanium nitride (TiN)-lower gate electrode film including a top surface, a first side surface, and a second side surface opposite the first side surface, a polysilicon-upper gate electrode film on the titanium nitride (TiN)-lower gate electrode film, and a gate capping film on the polysilicon-upper gate electrode film. A center portion of the top surface of the titanium nitride (TiN)-lower gate electrode film overlaps a center portion of the polysilicon-upper gate electrode film in a direction that is perpendicular to a top surface of the substrate, and each of the first side surface and the second side surface of the titanium nitride (TiN)-lower gate electrode film is connected to the gate insulating film.

Abstract: A display device including: a first elastic member, a display portion disposed on the first elastic member; and a sensing material layer disposed between the first elastic member and the display portion, wherein the display portion including a first island pattern, a second island pattern, and a slit, wherein the first island pattern and the second island pattern are spaced apart from each other with the slit therebetween, and each of the first island pattern and the second island pattern includes a pixel, and wherein the sensing material layer overlaps the slit.

Abstract: An electroluminescent device includes a first electrode and a second electrode facing each other; an emission layer disposed between the first electrode and the second electrode and including a plurality of quantum dots and a first hole transporting material having a substituted or unsubstituted C4 to C20 alkyl group attached to a backbone structure; a hole transport layer disposed between the emission layer and the first electrode and including a second hole transporting material; and an electron transport layer disposed between the emission layer and the second electrode.

Abstract: The present disclosure relates to a DC-DC converter, a vehicle, and a control method including the same, and more particularly, to a DC-DC converter, a vehicle, and a control method including the same capable of effectively detecting and responding to an interlock failure of a connector.

Abstract: The present invention relates to a tumor-targeting Salmonella gallinarum strain and the use thereof. The tumor-targeting Salmonella gallinarum strain has excellent tumor proliferation inhibitory activity and enables tumor-specific targeting, and thus can be utilized for treatment and imaging of tumors without any side effects.

Abstract: Proposed are a non-contact image-based blood pressure measurement method and system based on advanced visual intelligence, wherein a blood pressure measurement model is created by performing neural network training with an image sequence obtained by a webcam in a non-contact manner, and the blood pressure of a measurement subject is estimated with the blood pressure measurement model. Accordingly, since the webcam for obtaining a video, that is, an image sequence, in a non-contact manner is used, blood pressure is continuously estimated during the recording with the webcam without contact with a device or another person, and blood pressure is estimated just by being in front of the webcam, so the system is easy to use, inexpensive, and secures sufficient precision by using a neural network algorithm.

Abstract: Disclosed herein is an apparatus for managing disaggregated memory, which is located in a virtual machine in a physical node. The apparatus is configured to select, depending on the proportion of valid pages, direct transfer between remote memory units or indirect transfer via local memory for each of the memory pages of the source remote memory to be migrated, among at least one remote memory unit used by the virtual machine, to transfer the memory pages of the source remote memory to target remote memory based on the direct transfer or the indirect transfer, and to release the source remote memory.

Abstract: A blankmask for EUV lithography includes a substrate, a reflective layer, a capping layer, and a phase shift layer. The phase shift layer is made of a material containing ruthenium (Ru) and chromium (Cr), and a total content of ruthenium (Ru) and chromium (Cr) is 50 to 100 at %. The phase shift layer may further contain boron (B) or nitrogen (N). The phase shift layer of the present invention has a high relative reflectance (relative reflectance with respect to a reflectance of the reflective layer under the phase shift layer) with respect to a tantalum (Ta)-based phase shift layer and has a phase shift amount of 170 to 230°. It is possible to obtain excellent resolution when finally manufacturing a pattern of 7 nm or less by using a photomask manufactured using such a blankmask.

Abstract: A multilayer capacitor includes a capacitor body having an active region, upper and lower cover regions, and width margins on opposing sides of the active region. The width margin includes a first region on an internal side thereof adjacent the first and second internal electrodes and a second region on an external side between the first region and a respective external surface of the capacitor body, and he upper and lower cover regions each include a third region on an internal side thereof adjacent the internal electrodes and a fourth region on an external side between the third region and a respective external surface of the capacitor body. The active region, the second region, and the fourth region have a same dielectric constant A, and the first and third regions have a same dielectric constant B, and A and B are different from each other and satisfy 0.5?B/A.

Abstract: A multilayer ceramic capacitor includes a body including a dielectric layer and first and second internal electrodes having different sizes to each other, and having first and second surfaces of the first and second internal electrodes, opposing each other in a stacking direction, third and fourth surfaces connected to the first and second surfaces and opposing each other, and fifth and sixth surfaces connected to the first and second surfaces and connected to the third and fourth surfaces, and opposing each other; and first and second external electrodes.

Abstract: Methods and systems for executing tracking and monitoring manufacturing data of a battery are disclosed. One method includes: receiving, by a server system, sensing data of the battery from a sensing system; generating, by the server system, mapping data based on the sensing data; generating, by the server system, identification data of the battery based on the sensing data; generating, by the server system, monitoring data of the battery based on the sensing data, the identification data, and the mapping data; and generating, by the server system, display data for displaying a simulated electrode of the battery on a graphical user interface based on the monitoring data of the battery.

Abstract: The present disclosure relates to chemical compositions, kits, and apparatuses and methods for using these compositions, kits and apparatuses in various assays.

Abstract: A blankmask for extreme ultraviolet lithography includes a substrate, a reflective layer formed on the substrate, and a phase shift layer formed on the reflective layer. The phase shift layer contains niobium (Nb), and is made of a material containing one of tantalum (Ta), chromium (Cr), and ruthenium (Ru). A phase shift layer containing Nb and Ta has a relative reflectance of 5 to 20%, a phase shift layer containing Nb and Cr has a relative reflectance of 9 to 15%, and a phase shift layer containing Nb and Ru has a relative reflectance of 20% or more. The phase shift layer has a phase shift amount of 170 to 230°, and has a surface roughness of 0.5 nmRMS or less. It is possible to obtain excellent resolution when finally manufacturing a pattern of 7 nm or less by using a photomask manufactured using such a blankmask.