Abstract: A semiconductor device and a method for manufacturing the device capable of preventing an LDD region and a lower portion of the gate electrode from overlapping each other to achieve desirable device performance are disclosed. Embodiments relate to a semiconductor device and a method for manufacturing the device that may minimize overlap between an LDD region and a lower portion of the gate electrode. Minimizing overlap may maximize device performance and minimize the generation of defects between gate electrodes.

Abstract: A semiconductor device and a method of fabricating the same include a gate electrode formed over the silicon substrate, the gate electrode including low-concentration conductive impurity regions, a high-concentration conductive impurity region formed between the low-concentration conductive impurity regions and a first silicide layer formed over the high-concentration conductive impurity region, and contact electrodes including a first contact electrode connected electrically to the gate electrode and a second contact electrode connected electrically to source/drain regions. The first contact electrode contacts the uppermost surface of the gate electrode and a sidewall of the gate electrode. The gate electrode can be easily connected to the contact electrode, the high-concentration region can be disposed only on the channel region, making it possible to maximize overall performance of the semiconductor device.

Abstract: Embodiments relate to a SRAM, in which a well isolation method may be applied so that an N-well and a P-well are separated from each other and that well walls of opposite conductive types are formed on facing sides. Also, the active regions of NMOS and PMOS may be connected to each other and the contacts of a PMOS drain and an NMOS source may be united to one so that the contacts are moved to the active regions of wide parts. A size of the common contact may be one to two times the size of a contact defined by a design rule. The active region may have a round bent part. The common contacts are arranged to be asymmetrical with each other. Therefore, it may be possible to secure the process margins of the active regions and the contacts, to improve a leakage current characteristic, and to improve yield. Also, it may be possible to prevent the dislocation of the active region and to omit a conventional thermal treatment process so that it may be possible to simplify processes and to reduce manufacturing cost.

Abstract: Embodiments relate to a gate structure of a semiconductor device and a method of manufacturing the gate structure. An oxide layer may be formed on a silicon substrate before a gate insulating layer is formed. The oxide layer may be etched to form an opening exposing a channel area of the silicon substrate. After forming the gate insulating layer in the opening, a gate conductive layer may be deposited and etched to form a gate. The oxide layer may be continuously etched such that the oxide layer remains at both edge portions of the gate insulating layer. The oxide layer formed at both edge portions of the gate insulating layer may protect the gate insulating layer during a gate etching process, and may improve a reliability of the semiconductor device.

Abstract: Disclosed is a semiconductor device. The semiconductor device includes a circuit part, a pad metal aligned over the circuit part to electrically connect the circuit part, and a metal layer interposed between the pad metal and the circuit part to electrically connect the pad metal to the circuit part. A buffer layer including an insulating layer with metal patterns having a slit shape formed therein is formed within the metal layer.

Abstract: In fabricating a semiconductor device, by forming gate electrode lines to meet a design rule with additional simple processes such as a masking process, an etching process and the like for securing an isolation space between the gate electrode lines according to the design rule, the method of embodiments can overcome a problem in the related gate forming process so that a chip size is increased and high mask quality is required since the process has to proceed in consideration of additional design guide rules B1, B2 and the like for the length of gate electrode lines in addition to a gate forming process margin.

Abstract: A method of fabricating a metal line using a dual damascene process which enhances reliability of the semiconductor device.

Abstract: A semiconductor device can include a semiconductor substrate, a first trench formed in the semiconductor substrate, a second trench formed in the semiconductor substrate, a first device isolation layer formed in the first trench, a second device isolation layer formed in the second trench having a different structure than the first device isolation layer.

Abstract: Disclosed are a test pattern of a semiconductor device, a method of manufacturing the same, and a method of testing the device using the test pattern. The test pattern includes a lower metal pattern part formed over a semiconductor substrate, an intermetal insulating film formed over the lower metal pattern part, and upper metal pattern test parts formed over the intermetal insulating film such that the upper metal pattern parts are separated from each other by a designated distance.

Abstract: A semiconductor device and/or a method for manufacturing a semiconductor device. A method may include at least one of the following: Forming a first semiconductor layer over a semiconductor substrate. Forming a second semiconductor layer over the first semiconductor layer. Forming a trench through the first and second semiconductor layers. The trench may be fulled with an isolation film. The portion of the trench in the first semiconductor layer may have a width larger than a minimum width of the portion of the trench in the second semiconductor layer.

Abstract: A semiconductor device and a method for manufacturing the device capable of preventing an LDD region and a lower portion of the gate electrode from overlapping each other to achieve desirable device performance are disclosed. Embodiments relate to a semiconductor device and a method for manufacturing the device that may minimize overlap between an LDD region and a lower portion of the gate electrode. Minimizing overlap may maximize device performance and minimize the generation of defects between gate electrodes.

Abstract: A semiconductor device and a method of fabricating the same are disclosed. The semiconductor device includes a conductive well formed by implanting a first conductive impurity into a semiconductor substrate, a device isolation film on one side of the conductive well, and an insulating region below the device isolation film and including the first conductive impurity and a second conductive impurity. The semiconductor device has the insulating region below the device isolation film, making it possible to prevent a short circuit generated between devices.

Abstract: A semiconductor device capable of preventing damage to a thermal oxide layer in a trench, and a method for fabricating the same are disclosed. The device includes a trench in a field region of a semiconductor substrate; a pad oxide layer on the surface of the semiconductor substrate outside the trench; a thermal oxide layer on sidewalls of the trench; a nitride layer covering the thermal oxide layer; an insulating layer filling the trench; and a spacer covering the thermal oxide layer outside the trench.

Abstract: A semiconductor device and a method of fabricating the same includes a semiconductor substrate including a first trench; an epitaxial layer disposed on and/or over the semiconductor substrate and including a second trench connected to the first trench; a first insulator disposed in the first trench; and a second insulator disposed in the second trench.

Abstract: A semiconductor device and a method of fabricating the same includes a groove formed in a semiconductor substrate, a gate electrode formed in the groove, source/drain regions disposed adjacent sidewalls of the gate electrode, and spacers interposed between the gate electrode and the source/drain regions such that the uppermost surface of the source/drain regions, the uppermost surface of the gate electrode and the uppermost surface of the spacers are formed on the same plane.

Abstract: A semiconductor device can include a semiconductor substrate, a first trench formed in the semiconductor substrate, a second trench formed in the semiconductor substrate, a first device isolation layer formed in the first trench, a second device isolation layer formed in the second trench having a different structure than the first device isolation layer.

Abstract: A semiconductor device and a method of fabricating the same include a gate electrode formed over the silicon substrate, the gate electrode including low-concentration conductive impurity regions, a high-concentration conductive impurity region formed between the low-concentration conductive impurity regions and a first silicide layer formed over the high-concentration conductive impurity region, and contact electrodes including a first contact electrode connected electrically to the gate electrode and a second contact electrode connected electrically to source/drain regions. The first contact electrode contacts the uppermost surface of the gate electrode and a sidewall of the gate electrode. The gate electrode can be easily connected to the contact electrode, the high-concentration region can be disposed only on the channel region, making it possible to maximize overall performance of the semiconductor device.

Abstract: A dummy gate may be formed over an isolation layer. A sidewall spacer may be formed next to the dummy gate. The dummy gate and the sidewall spacer may substantially cover or completely cover the edge of isolation layer that is adjacent to an active area of a silicon substrate. Damage to the isolation layer due to a contact hole etching may be prevented, even if there are misalignments.

Abstract: Embodiments relate to a method for manufacturing a semiconductor device. According to embodiments, a gate insulating layer and a conductive layer may be formed on a semiconductor substrate. The conductive layer may be selectively etched to form a relatively thick portion of the conductive layer in a gate region and relatively thin portions of the conductive layer in other regions. Impurity ions may be implanted in an entire surface of the semiconductor substrate to form a lightly doped drain region. The gate insulating layer and the conductive layer may be selectively etched to form a gate electrode. Insulating layer sidewalls may be formed at both sides of the gate electrode, and source/drain regions may be formed in portions of the semiconductor substrate located at both sides of the gate electrode.

Abstract: A method for fabricating a semiconductor device includes forming a first insulating pattern, a first conductive pattern, and a second conductive pattern on a semiconductor substrate; forming a spacer on sidewalls of the first insulating pattern, the first conductive pattern, and the second conductive pattern; forming a second insulating pattern over the substrate; forming a first salicide on an exposed portion of the substrate and a second salicide on an entire upper surface of the second conductive pattern; depositing a third insulating layer over the substrate, and etching selectively the third insulating layer to forming first and second contact holes exposing the first and second salicides. The method provides processing margin and prevents excessive etching of a conductive layer under the salicide, even if misalignment of an overlying contact hole happens.