Abstract: A method for adaptively allocating resources of an uplink control channel according to a system situation is disclosed. If a base station (BS) recognizes the system situation, establishes control information for resource allocation, and transmits the control information to a mobile station (MS), the mobile station (MS) allocates resources for transmitting uplink control information using a specific block or a specific resource distribution method according to the corresponding control information. The system situation may be changed according to the number of users contained in the BS's coverage or the usage of a multi-antenna. The variation of the system situation is actively reflected so that the uplink channel resources can be effectively used.

Abstract: The stack type semiconductor package module includes a lower semiconductor package having a main substrate, a chip mounted on the main substrate and electrically connected to the main substrate through a wire. An epoxy molding compound (EMC) is provided on the main substrate to cover the chip and the wire. Contact holes are formed in the EMC. A sub-substrate having protrusions coated with solder is connected to the lower semiconductor package by inserting the solder coated protrusions into the contact holes. Heat is applied to the protrusions, and the molten solder solidifies inside the contact holes. An upper semiconductor package having substantially identical structure as the lower package is then stacked on the sub-substrate.

Abstract: A hydraulic power generating system is disclosed. The hydraulic power generating system includes a looped rail, a plurality of pulleys moving along the looped rail, a plurality of water receiving plates, each being installed to each of the pulleys, side plates which are hingedly coupled to left and right side portions of each of the water receiving plates by hinge shafts, and spread adjusting devices which make the side plates spread against a direction of water flow. Accordingly, since the spread direction of the side plates hingedly coupled to both side portions of the water receiving plate can be changed forward and backward according to the direction of water flow so as to receive a larger amount of water, efficiency in generating power using water energy increases.

Abstract: Provided are high voltage metal oxide semiconductor field effect transistor (HVMOSFET) having a Si/SiGe heterojunction structure and method of manufacturing the same. In this method, a substrate on which a Si layer, a relaxed SiGe epitaxial layer, a SiGe epitaxial layer, and a Si epitaxial layer are stacked or a substrate on which a Si layer having a well region, a SiGe epitaxial layer, and a Si epitaxial layer are stacked is formed. For the device having the heterojunction structure, the number of conduction carriers through a potential well and the mobility of the carriers increase to reduce an on resistance, thus increasing saturation current. Also, an intensity of vertical electric field decreases so that a breakdown voltage can be maintained at a very high level. Further, a reduction in vertical electric field due to the heterojunction structure leads to a gain in transconductance (Gm), with the results that a hot electron effect is inhibited and the reliability of the device is enhanced.

Abstract: A gas radiation burner includes a gas supply member for injecting a gas; at least one mixing pipe producing a mixed gas by sucking air together with the gas injected by the gas supply member, the at least one mixing pipe uniformly injecting the mixed gas; a burner pot having a lateral side opening connected to the at least one mixing pipe to accommodate the mixed gas supplied by the at least one mixing pipe; a burner mat provided over the burner pot to emit radiant heat generated by combustion of the mixed gas supplied by the burner pot; and a burner housing provided on the burner mat to provide a combustion room.

Abstract: A gas radiation burner includes a gas supply unit for spraying a mixed gas of a gas and air; a burner body having a burner pot accommodating the mixed gas supplied by the gas supply unit and a burner housing provided on the burner pot to configure a combustion chamber; a burner mat provided over the burner pot to emit a radiant heat generated by combustion of the mixed gas supplied by the burner pot; and an air supply unit supplying air to the burner housing.

Abstract: Provided is a multiple-gate metal oxide semiconductor (MOS) transistor and a method for manufacturing the same, in which a channel is implemented in a streamline shape, an expansion region is implemented in a gradually increased form, and source and drain regions is implemented in an elevated structure by using a difference of a thermal oxidation rate depending on a crystal orientation of silicon and a geographical shape of the single-crystal silicon pattern. As the channel is formed in a streamline shape, it is possible to prevent the degradation of reliability due to concentration of an electric field and current driving capability by the gate voltage is improved because the upper portion and both sides of the channel are surrounded by the gate electrodes. In addition, a current crowding effect is prevented due to the expansion region increased in size and source and drain series resistance is reduced by elevated source and drain structures, thereby increasing the current driving capability.

Abstract: A high-reliability, multi-threshold complementary metal oxide semiconductor (CMOS) latch circuit having low sub-threshold leakage current is provided. More particularly, a latch circuit and flip-flop that can be applied in the deep sub-micron era and that are entirely configured of only CMOS using a combination of a high threshold device and a low threshold device and a low-threshold-voltage stack structure, without using a power gating technique such as multi-threshold CMOS (MTCMOS) and a back bias voltage control technique such as variable threshold CMOS (VTCMOS), are provided.

Abstract: The present invention relates to a new binaphthalene derivative, a preparation method thereof, and an organic electronic device using the same. The binaphthalene derivative according to the present invention can perform functions of hole injection and transportation, electron injection and transportation, or light emission in an organic electronic device including an organic light-emitting device, and the device according to the present invention has excellent characteristics in terms of efficiency, drive voltage and stability, and in particular excellent effects such as a low voltage and a long life time.

Abstract: The stack type semiconductor package module includes a lower semiconductor package having a main substrate, a chip mounted on the main substrate and electrically connected to the main substrate through a wire. An epoxy molding compound (EMC) is provided on the main substrate to cover the chip and the wire. Contact holes are formed in the EMC. A sub-substrate having protrusions coated with solder is connected to the lower semiconductor package by inserting the solder coated protrusions into the contact holes. Heat is applied to the protrusions, and the molten solder solidifies inside the contact holes. An upper semiconductor package having substantially identical structure as the lower package is then stacked on the sub-substrate.

Abstract: The present invention provides an indene derivatives having a new structure and an organic light-emitting diode using the same. The organic light-emitting diode according to the present invention shows improved effects in efficiency, driving voltage and stability.

Abstract: The present invention provides an organic electronic device using the compound of the formula (1) and a pyrene derivative having a new structure.

Abstract: The present invention relates to an organic thin film transistor which includes an organic layer comprising an organic compound facilitating the ohmic contact between a semi-conducting layer and electrodes and serving as the semi-conducting layer. The organic thin film transistor according to the present invention has excellent electric contact between the semiconductor layer and the source electrode/drain electrode, and thus can be widely used as components for electric/electronic devices. As a result, as the materials for the source electrode or the drain electrode in the organic thin film transistor, materials which are less expensive and excellent in processibility though they have a low work function as the materials can be used.

Abstract: The present invention relates to a new imidazole derivative, a method for preparing the derivative, and an organic electronic device using the derivative. The imidazole derivative according to the invention can perform functions of hole injection, hole transportation, electron injection, electron transportation, and/or light emission in an organic electronic device including an organic light-emitting device. The organic electronic device according to the invention exhibits excellent characteristics in terms of efficiency, drive voltage and stability.

Abstract: Disclosed herein are novel imidazole derivatives and organic electronic device using the same. The disclosed organic electronic device show excellent characteristics in terms of efficiency, driving voltage and stability.

Abstract: Exhaust system in a radiation gas range including a housing having exhaust openings (410a) in a rear part for discharge of exhaust gas, a sheet of glass on top of the housing for transmission of radiant heat to a heating object placed thereon, front and rear burner housings (431,432) in contact with a bottom surface of the sheet of glass for forming spaces to burn mixed gas therein, front radiation gas burners (441) in lower parts of the front burner housings (431) respectively each for burning mixed gas at a surface of a radiation body to generate a radiation energy, rear radiation gas burners (442) in lower parts of the front burner housings (431) respectively each for burning mixed gas at a surface of a radiation body to generate a radiation energy, and an exhaust duct (451) in lower parts of, and in communication with the front and/or rear burner housings (431,432) for discharging exhaust gas from the front and rear radiation burners (441,442) toward the exhaust openings (410a).

Abstract: Provided is a voltage/current driven active matrix organic electroluminescent (EL) pixel circuit. In particular, a voltage/current driven active matrix organic EL pixel circuit capable of driving organic ELs by a voltage programming method and a current programming method using one pixel circuit and an organic EL display device that uses such a pixel circuit are provided. The voltage/current driven active matrix organic EL pixel circuit can be used for a voltage driven active matrix organic EL and a current driven active matrix organic EL by programming such that the flexibility and applicability of the pixel circuit and the driving circuit are excellent.

Abstract: Provided is a parallel data path architecture for high energy efficiency. In this architecture, a plurality of parallel process units and a plurality of function units of the process units are controlled by instructions and processed in parallel to improve performance. Also, since only necessary process units and function units are enabled, power dissipation is reduced to enhance energy efficiency. Further, by use of a simple instruction format, hardware can be programmed as the parallel data path architecture for high energy efficiency, which satisfies both excellent performance and low power dissipation, thus elevating hardware flexibility.

Abstract: An apparatus for printing an alignment layer of a liquid crystal display device includes a dispenser dropping an alignment material, an anilox roll receiving the dropped alignment material, a doctor roll evenly spreading the dropped alignment material coated onto the anilox roll, and a printing roll receiving the alignment material from the anilox roll, and transferring the alignment material onto a substrate, wherein the printing roll has a plurality of masks each having a numerical aperture of about 5% to 25%.

Abstract: Gas range including a casing having an inlet for drawing external air, and an outlet for discharging exhaust gas, at least one burner each having a burner mat for being heated with flame formed at the time of combustion of fuel gas to generate radiant heat, a sheet of glass covered on each of the burners for transmission of the radiant heat, and a first fan provided at the outlet for discharging the exhaust gas to an outside of the gas range, and drawing the external air into the casing.