Patents by Inventor Dae Nam

Dae Nam has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070060737
    Abstract: The present invention relates to a polyarylate prepared by a method comprising a step of copolymerizing divalent phenol, divalent aromatic carboxylic acid halide and the allyl bisphenol derivative. The polyarylate according to the invention is a novel polyarylate in which various functional groups can be introduced to the main chain of the polymer as well as the terminal of a polymer, and the concentration thereof can be adjusted. These functional groups allow improvement in the adhesion force by chemically bonding with the substrate or protective layer when coated, thus the polyarylate is suitably used for a film or a coating composition.
    Type: Application
    Filed: September 12, 2006
    Publication date: March 15, 2007
    Inventors: Hyo Lee, Dong Kim, Hee Kim, Dae Nam, Sang Ryu, Boong Jeong, Ju Cha
  • Publication number: 20070059456
    Abstract: Disclosed are a negative C-type compensation film and a method of preparing the same. The negative C-type compensation film includes a) a base layer, and b) a polymer layer comprising polyarylate prepared by a method comprising the step of copolymerizing divalent phenols, divalent aromatic carboxylic acid halides, and allyl bisphenol derivatives, the base layer and the polymer layer being sequentially layered. The compensation film is capable of being used for the negative C-type compensation film without a stretching process, significantly reduces the thickness of the compensation film, and has significantly improved interlayer adhesion force in a multilayer structure.
    Type: Application
    Filed: September 12, 2006
    Publication date: March 15, 2007
    Inventors: Hyo Lee, Dong Kim, Hee Kim, Dae Nam, Sang Ryu, Boong Jeong, Ju Cha, Ho Lee
  • Publication number: 20060176431
    Abstract: A method for forming an alignment layer for a liquid crystal display includes preparing a substrate, applying an alignment material for initial alignment of a liquid crystal, and applying a field flux (e.g., an electric or magnetic field) to the alignment material to determine the alignment direction of the alignment material. Further disclosed is an apparatus for forming an alignment layer for a liquid crystal display. The apparatus comprises a substrate stage on which a substrate is mounted, and an electric or magnetic field generator installed at the periphery of the substrate stage. According to the method and the apparatus, since the alignment direction of an alignment material is determined by using an electric or magnetic field, no physical contact with a substrate is required and thus the problem of light leakage caused by rubbing alignment is solved.
    Type: Application
    Filed: November 30, 2005
    Publication date: August 10, 2006
    Inventors: Chang Kim, Hyun Seo, Kwang Shin, Dae Nam
  • Publication number: 20060121643
    Abstract: An organic thin film transistor and a method for fabricating the same are disclosed. The method for fabricating the organic thin film transistor includes forming a gate electrode on a substrate. A gate insulating layer is formed on an entire surface of the substrate including the gate electrode, and source and drain electrodes are formed at a predetermined interval from each other on the gate insulating layer. An organic semiconductor layer is formed on the entire surface of the substrate and a first protection layer is formed on the organic semiconductor layer. The first protection layer is patterned and the organic semiconductor layer etched using the remaining first protection layer as a mask. A second protection layer is then formed on the entire surface of the substrate.
    Type: Application
    Filed: August 19, 2005
    Publication date: June 8, 2006
    Inventors: Hyun Seo, Dae Nam, Nack Choi
  • Publication number: 20050263773
    Abstract: A thin film transistor includes a substrate, a crystallized semiconductor layer formed over the substrate having a channel region, low-density impurity regions and high-density impurity regions, a gate insulating layer formed on the crystallized semiconductor layer, a first gate electrode formed on the gate insulating layer having a width corresponding to the channel region, a second gate electrode formed on the first gate electrode and on the gate insulating layer such that the second gate electrode overlaps the low-density impurity regions and a source electrode and a drain electrode respectively contacting the high-density impurity regions.
    Type: Application
    Filed: August 2, 2005
    Publication date: December 1, 2005
    Inventor: Dae Nam
  • Publication number: 20050080296
    Abstract: There are provided a method of simply preparing a 1,4,6-substituted, 1,4-substituted, 1,6-substituted, or 1-substituted fulvene compound, the intermediates of the fulvene compound, and a method of preparing an ansa-metallocene compound in which two cyclopentadienyl ligands are bridged by one carbon and there are substituents only at positions adjacent to the bridging point of a cyclopentadienyl ligand, using the fulvene compound.
    Type: Application
    Filed: October 13, 2004
    Publication date: April 14, 2005
    Inventors: Young Park, Hyosun Lee, Sung Hong, Kwang Song, Boong Jeong, Dae Nam, Hye Jung, Bun Lee, Young Won