Abstract: A stand for an image display device is provided. The stand includes a leg unit. In the leg unit, a supporting member supports the image display device, a connecting member is coupled to the supporting member and rotatable in forward and backward directions with respect to the supporting member, and a base member supports the image display device with respect to a floor. The base member is rotatable in a direction different from the rotation directions of the connection member for being folded to a back of the image display device.

Abstract: Provided are a semiconductor laser diode and a method of manufacturing the same. The semiconductor laser diode includes a lower cladding layer disposed on a substrate; a ridge including an optical waveguide layer, an active layer, an upper cladding layer, and an ohmic contact layer, which are sequentially stacked on the lower cladding layer, and having a predetermined width, which is obtained by performing a channel etching process on both sides of the ridge; an oxide layer disposed on surfaces of the upper and lower cladding layer to control the width of the ridge; a dielectric layer disposed on left and right channels of the ridge; an upper electrode layer disposed on the entire surface of the resultant structure to enclose the ridge and the dielectric layer; and a lower electrode layer disposed on a bottom surface of the substrate. The method is simpler than a conventional process of manufacturing a semiconductor laser diode.