Abstract: A jig for bonding a semiconductor chip may include a pressurizing portion and at least one opening. The pressuring portion may be configured to pressurize an upper surface of the semiconductor chip bonded to a package substrate via a bump and a flux using a laser. The opening may be surrounded by the pressurizing portion. The laser irradiated to the bump and the flux may be transmitted through the opening. A vapor generated from the flux by the laser may be discharged through the opening. Thus, the contamination of the jig caused by the vapor may be prevented so that a transmissivity of the laser through the jig may be maintained.

Abstract: A jig for bonding a semiconductor chip may include a pressurizing portion and at least one opening. The pressuring portion may be configured to pressurize an upper surface of the semiconductor chip bonded to a package substrate via a bump and a flux using a laser. The opening may be surrounded by the pressurizing portion. The laser irradiated to the bump and the flux may be transmitted through the opening. A vapor generated from the flux by the laser may be discharged through the opening. Thus, the contamination of the jig caused by the vapor may be prevented so that a transmissivity of the laser through the jig may be maintained.

Abstract: A method of fabricating a semiconductor device comprises loading a circuit board including a semiconductor chip into underfill equipment, positioning the circuit board on a depositing chuck of the underfill equipment, filling an underfill material in a space between the semiconductor chip and the circuit board placed on the depositing chuck; transferring the circuit board including the underfill material so that it is positioned on a post-treatment chuck of the underfill equipment; heating the underfill material of the circuit board placed on the post-treatment chuck in a vacuum state, and unloading the circuit board, of which the underfill material has been heated in the vacuum state, from the underfill equipment.

Abstract: A method of fabricating a semiconductor device comprises loading a circuit board including a semiconductor chip into underfill equipment, positioning the circuit board on a depositing chuck of the underfill equipment, filling an underfill material in a space between the semiconductor chip and the circuit board placed on the depositing chuck; transferring the circuit board including the underfill material so that it is positioned on a post-treatment chuck of the underfill equipment; heating the underfill material of the circuit board placed on the post-treatment chuck in a vacuum state, and unloading the circuit board, of which the underfill material has been heated in the vacuum state, from the underfill equipment.

Abstract: A stack-type semiconductor device including semiconductor chips having different backside structures and an electronic apparatus including the stack-type semiconductor device include: a base frame for a semiconductor device; a first semiconductor chip that is mounted on the base frame and has a bottom surface having a first surface roughness; and a second semiconductor chip that is mounted on the first semiconductor chip and has a bottom surface having a second surface roughness, wherein the second surface roughness is greater than the first surface roughness by 1.2 nm or more. The stack-type semiconductor device is manufactured to be thin while cracking of the first semiconductor chip is prevented. In addition, changes in data caused by charge loss resulting from diffusion of metal ions, which can occur when a stack-type semiconductor device is a memory device, is prevented.

Abstract: In a method of cutting a wafer, a supporting member is attached to an upper surface of the wafer on which semiconductor chips are formed. An opening is formed at a lower surface of the wafer along a scribe lane of the wafer. The lower surface of the wafer may be plasma-etched to reduce a thickness of the wafer. A tensile tape may be attached to the lower surface of the wafer. Here, the tensile tape includes sequentially stacked tensile films having different tensile modules. The supporting member is then removed. The tensile tape is cooled to increase the tensile modules between the tensile films. The tensile tape is tensed until the tensile films are cut using the tensile modules difference to separate the tensile tape from the semiconductor chips. Thus, the lower surface of the wafer may be plasma-etched without using an etching mask.

Abstract: Provided are a semiconductor package and a semiconductor package module including the same. The semiconductor package may include a plurality of semiconductor chips, a plurality of leads connected to pads of the semiconductor chips and externally exposed, wherein the plurality of leads may be classified into a plurality of pin groups, and the plurality of semiconductor chips may be classified into a plurality of chip groups, and the pads of the semiconductor chips of like chip groups may be connected to the leads of like pin groups.

Abstract: An inexpensive method of manufacturing a semiconductor package using a redistribution substrate that is relatively thin. The method includes: attaching a semiconductor chip to a redistribution substrate; attaching the redistribution substrate to which the semiconductor chip is attached to a printed circuit board; removing a support substrate of the redistribution substrate; forming via holes to expose a bond pad of the semiconductor chip and a bond finger of the printed circuit board; and filling the via holes with a conductive material. Meanwhile, a redistribution substrate to which at least one other semiconductor chip may be mounted on the redistribution substrate.

Abstract: A semiconductor device and a method of forming the same are provided. A semiconductor chip included in the semiconductor device includes a pillar-shaped terminal and a pad-shaped terminal in a terminal region. The pillar-shaped terminal is exposed at a first surface of a chip substrate in the terminal region and the pad-shaped terminal is exposed at a second surface of the chip substrate in the terminal region, where the first surface and the second surface of the chip substrate in the terminal region face oppositely from each other.

Abstract: A wafer grinding and tape attaching apparatus and method, the method includes providing a wafer to a chuck table, grinding a back side of the wafer, providing a wafer ring having dicing tape and attaching the dicing tape to the back side of the ground wafer.

Abstract: An inexpensive method of manufacturing a semiconductor package using a redistribution substrate that is relatively thin. The method includes: attaching a semiconductor chip to a redistribution substrate; attaching the redistribution substrate to which the semiconductor chip is attached to a printed circuit board; removing a support substrate of the redistribution substrate; forming via holes to expose a bond pad of the semiconductor chip and a bond finger of the printed circuit board; and filling the via holes with a conductive material. Meanwhile, a redistribution substrate to which at least one other semiconductor chip may be mounted on the redistribution substrate.

Abstract: Provided are a semiconductor package and a semiconductor package module including the same. The semiconductor package may include a plurality of semiconductor chips, a plurality of leads connected to pads of the semiconductor chips and externally exposed, wherein the plurality of leads may be classified into a plurality of pin groups, and the plurality of semiconductor chips may be classified into a plurality of chip groups, and the pads of the semiconductor chips of like chip groups may be connected to the leads of like pin groups.

Abstract: In a method of cutting a wafer, a supporting member is attached to an upper surface of the wafer on which semiconductor chips are formed. An opening is formed at a lower surface of the wafer along a scribe lane of the wafer. The lower surface of the wafer may be plasma-etched to reduce a thickness of the wafer. A tensile tape may be attached to the lower surface of the wafer. Here, the tensile tape includes sequentially stacked tensile films having different tensile modules. The supporting member is then removed. The tensile tape is cooled to increase the tensile modules between the tensile films. The tensile tape is tensed until the tensile films are cut using the tensile modules difference to separate the tensile tape from the semiconductor chips. Thus, the lower surface of the wafer may be plasma-etched without using an etching mask.

Abstract: A wafer fixing apparatus is disclosed including a dicing stage structured to fix a semiconductor wafer. A die attach film is disposed on the dicing stage to attach the semiconductor wafer to the dicing stage. The die attach film attaches the semiconductor wafer to the dicing stage due to the tackiness of the die attach film. A wafer ring, which may be of a metallic material, is coupled to the dicing stage using a wafer ring attaching member.

Abstract: A semiconductor device and a method of forming the same are provided. A semiconductor chip included in the semiconductor device includes a pillar-shaped terminal and a pad-shaped terminal in a terminal region. The pillar-shaped terminal is exposed at a first surface of a chip substrate in the terminal region and the pad-shaped terminal is exposed at a second surface of the chip substrate in the terminal region, where the first surface and the second surface of the chip substrate in the terminal region face oppositely from each other.

Abstract: Example embodiments may provide an apparatus for and method of separating a semiconductor chip. In the example embodiments, a separating plate having an end insertable between a base tape and an adhesive film may move back and forth in a direction perpendicular to an edge of the semiconductor chip so as to separate the semiconductor chip. Example embodiments may allow fragile, thin semiconductor chips to be safely packaged without damage and thus may increase semiconductor chip yield.

Abstract: A wafer grinding and tape attaching apparatus and method, the method includes providing a wafer to a chuck table, grinding a back side of the wafer, providing a wafer ring having dicing tape and attaching the dicing tape to the back side of the ground wafer.

Abstract: Example embodiments of the present invention relate to a method of packaging a semiconductor device. Other example embodiments of the present invention relate to a method of fabricating wafer chips for packaging a semiconductor device. Provided is a method of fabricating a wafer chips, which can perform a reliable pick-up process by removing the adhesive component adhering onto the cutting surfaces of the wafer chips, the diced DAF and the first base film. The method includes preparing at least one wafer, attaching at least one film onto a back surface of the wafer to support the wafer, forming wafer chips by dicing the wafer, detaching the at least one film from the wafer chips and attaching at least one base film onto the wafer chips to support the wafer chips.