Abstract: A method of fabricating a semiconductor package includes providing a substrate on a stage, the substrate including semiconductor dies and a modified layer along a partition lane and sequentially having an adhesive film and a base film on a surface thereof so that bottom surfaces of the adhesive film and the base film face the stage and top surfaces of the adhesive film and the base film face away from the stage and the bottom surface of the adhesive film faces the top surface of the base film; separating the semiconductor dies from each other by applying a force to the substrate in a lateral direction; applying a gas pressure to a top surface of each of the semiconductor dies; and irradiating ultraviolet rays toward the adhesive film after applying the gas pressure on the top surface of each of the semiconductor dies.

Abstract: A method of fabricating a semiconductor package includes providing a substrate on a stage, the substrate including semiconductor dies and a modified layer along a partition lane and sequentially having an adhesive film and a base film on a surface thereof so that bottom surfaces of the adhesive film and the base film face the stage and top surfaces of the adhesive film and the base film face away from the stage and the bottom surface of the adhesive film faces the top surface of the base film; separating the semiconductor dies from each other by applying a force to the substrate in a lateral direction; applying a gas pressure to a top surface of each of the semiconductor dies; and irradiating ultraviolet rays toward the adhesive film after applying the gas pressure on the top surface of each of the semiconductor dies.

Abstract: A method of processing a semiconductor wafer that has a first surface and a second surface opposite to the first surface. The method includes forming grooves of a predetermined depth on the second surface on which circuit patterns are formed, attaching a first surface of a protective tape to the second surface on which the grooves are formed, attaching a carrier tape to a second surface of the protective tape opposite to the first surface of the protective tape so that the first surface of the semiconductor wafer can be oriented upward, removing the first surface of the semiconductor wafer by a predetermined thickness and dividing the semiconductor wafer into chips by the grooves, and supplying each chip to a die bonder in the state where the first surface of the of the chip is oriented upward. Only one kind of die bonder is needed. A UV-type tape is not required.

Abstract: A wire bonding method may involve forming a bonding ball on a leading end of a wire projected from a capillary. The bonding ball may be transformed to increase an area of the mounting surface of the bonding ball. The transformed bonding ball may be bonded to the bonding pad.

Abstract: A method of processing a semiconductor wafer that has a first surface and a second surface opposite to the first surface. The method includes forming grooves of a predetermined depth on the second surface on which circuit patterns are formed, attaching a first surface of a protective tape to the second surface on which the grooves are formed, attaching a carrier tape to a second surface of the protective tape opposite to the first surface of the protective tape so that the first surface of the semiconductor wafer can be oriented upward, removing the first surface of the semiconductor wafer by a predetermined thickness and dividing the semiconductor wafer into chips by the grooves, and supplying each chip to a die bonder in the state where the first surface of the of the chip is oriented upward. Only one kind of die bonder is needed. A UV-type tape is not required.