Abstract: One embodiment of the present invention relates to a light-emitting device, a method for manufacturing the light-emitting device, a light-emitting device package, and a lighting system. The light-emitting device, according to the one embodiment, comprises: a first conductive semiconductor layer (112); a gallium nitride-based super lattice layer (124) on the first conductive semiconductor layer (112); an active layer (114) on the gallium nitride-based super lattice layer (124); a second conductive gallium nitride-based layer on the active layer (114); and a second conductive semiconductor layer (116) on the second conductive gallium nitride-based layer, wherein the second conductive gallium nitride-based layer can include a second conductive AlxGa(1-x)N/AlyGa(1-y)N (here, AlxGa(1-x)N/AlyGa(1-y)N) on the active layer (114).

Abstract: The embodiment relates to a light-emitting device, a method of manufacturing the same, a light-emitting device package, and a lighting system. A light-emitting device according to the embodiment may include: a first conductive semiconductor layer; a gallium nitride-based superlattice layer on the first conductive semiconductor layer; an active layer on the gallium nitride-based superlattice layer; a second conductive gallium nitride-based layer on the active layer; and a second conductive semiconductor layer on the second conductive gallium nitride-based layer. The second conductive gallium nitride-based layer may include a second conductive GaN layer having a first concentration, a second conductive InxAlyGa(1-x-y)N (0<x<1, 0<y<1) layer having a second concentration and a second conductive AlzGa(1-z)N (0<z<1) layer having a third concentration on the active layer.

Abstract: The present invention relates to an electronic document communication system and to an electronic document communication method, which can construct an electronic document communication system for providing not only enterprise/institutions with reliability, but also individuals and small companies.

Abstract: Embodiments of the present invention include a light emitting element, a method for manufacturing the light-emitting element according to one embodiment of the present invention, comprises: a first conductive semiconductor layer 112; a GaN-based superlattice layer 124 on the first conductive semiconductor layer 112; an active layer 114 on the GaN-based superlattice layer 124; and a second conductive semiconductor layer 116 on the active layer 114, wherein the GaN-based superlattice layer 124 has a bandgap energy level that varies in a direction from the first conductive semiconductor layer 112 to the active layer 114.

Abstract: A transparent conductor, a method of fabricating the same, and an optical display, the transparent conductor including a base layer; and a conductive layer on the base layer, the conductive layer including metal nanowires and a matrix, wherein the matrix is prepared from a matrix composition, the matrix composition including inorganic hollow particles, a fluorine-containing monomer, or a mixture thereof.

Abstract: A transparent conductor, a method for preparing the same, and an optical display including the same, the transparent conductor including a base layer; and a conductive layer on the base layer, the conductive layer including metal nanowires and a matrix, wherein the transparent conductor has a transmissive b* value of about 1.5 or less, and the matrix is prepared from a matrix composition including a tri-functional monomer and one of a penta-functional monomer or a hexa-functional monomer a base layer; and a conductive layer formed on the base layer and including metal nanowires and a matrix, wherein the transparent conductor has a transmissive b* value of about 1.5 or less, and the matrix is formed of a composition including a penta- or hexa-functional monomer and a tri-functional monomer.

Abstract: Disclosed are a light emitting device and a lighting system having the same. The light emitting device includes a first conductivity-type semiconductor layer, an interfacial layer including at least two superlattice structures adjacent to the first conductivity-type semiconductor layer, an active layer adjacent to the interfacial layer, and a second conductivity-type semiconductor layer adjacent to the active layer. The first conductivity-type semiconductor layer, interfacial layer, active layer, and second conductivity-type semiconductor layer are stacked in a same direction, the first and second semiconductor layer are of different conductivity types, an energy band gap of the superlattice structure adjacent to the active layer is smaller than an energy band gap of the superlattice structure adjacent to the first conductivity-type semiconductor layer.

Abstract: An electrophotographic image forming apparatus may include a body frame; a developer cartridge; a toner cartridge mounted in the body frame to be detachable, and is configured to move to a first location where the toner cartridge starts to connect to the developer cartridge to supply toner and to a second location where the connection is completed; at least one first location regulating member provided in the developer cartridge and regulating a relative location of the toner cartridge with respect to the developer cartridge when the toner cartridge is located in the first location; and at least one second location regulating member provided in the body frame and regulating a relative location of the toner cartridge with respect to the developer cartridge so that the toner cartridge is spaced apart from the at least one first location regulating member when the toner cartridge is located in the second location.

Abstract: The present invention provides a stacked transparent electrode in which a coating layer (B) comprising carbon nanotubes and a coating layer (C) comprising metal nanowires are stacked on a base substrate (A) in a plurality of levels, wherein the stacked structure is composed of the coating layer (B) comprising carbon nanotubes and the coating layer (C) comprising metal nanowires stacked in an alternate manner, further the present invention can maximize the conductivity of the metal nanowire by coating the transparent substrate using the carbon nanotubes and the metal nanowires, and can secure efficiency and stability of the transparent electrode by preventing oxidation of the metal nanowires and maintaining a stable coating surface when coupled with the carbon nanotubes.

Abstract: A developer of an image-forming apparatus includes a photoconductor, a housing comprising a waste toner container in which waste toner removed from the photoconductor is contained, and a recessed portion depressed downwardly in a center portion of an upper wall of the waste toner container, the center portion corresponding to a center portion of the photoconductor in a lengthwise direction to move toner away from the center portion.

Abstract: A light emitting device, a light emitting device package, and a lighting system are provided. The light emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers. The active layer includes a first active layer adjacent to the second conductive type semiconductor layer, a second active layer adjacent to the first conductive type semiconductor layer, and a gate quantum barrier between the first and second active layers.

Abstract: A developing device and an image forming apparatus having the same. The developing device includes a space maintaining member separably coupled to an outer surface of a housing thereof. The space maintaining member restricts movement of a holder used to support a charging roller which comes into contact with a photoconductor by pressure of a pressure member, providing use convenience and operation reliability.

Abstract: A light emitting device, a light emitting device package, and a lighting system are provided. The light emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers. The active layer includes a first active layer adjacent to the second conductive type semiconductor layer, a second active layer adjacent to the first conductive type semiconductor layer, and a gate quantum barrier between the first and second active layers.

Abstract: The present invention relates to an electronic document distribution system and to an electronic document distribution method, which can construct an electronic document distribution system for providing not only enterprise/institutions with reliability, but also individuals and small companies.

Abstract: A developer includes a waste toner container having a cleaning member to clean a photoconductive drum, and a waste toner transporting member to transport waste toner from the photoconductive drum to a waste toner storage area. The waste toner transporting member is moved up, down, forward, and backward by a rotation member having an eccentricity unit. As the rotation member rotates, the waste toner transporting member, which is connected to the eccentricity unit, moves up, down, forward, and backward.

Abstract: The present invention relates to creating, distributing, and storing a distribution certificate in an electronic document distribution system which is based on a public electronic address, and particularly to a method for creating/issuing an electronic document distribution certificate, a method for verifying an electronic document distribution certificate, and a system for distributing an electronic document, which makes it possible to provide a transparent and efficient issuing service and to raise the distribution reliability of electronic documents due to the security of the compatibility of the certificate.

Abstract: A light emitting device, a light emitting device package, and a lighting system are provided. The light emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers. The active layer includes a first active layer adjacent to the second conductive type semiconductor layer, a second active layer adjacent to the first conductive type semiconductor layer, and a gate quantum barrier between the first and second active layers.

Abstract: A developer of an image-forming apparatus includes a photoconductor, a housing comprising a waste toner container in which waste toner removed from the photoconductor is contained, and a recessed portion depressed downwardly in a center portion of an upper wall of the waste toner container, the center portion corresponding to a center portion of the photoconductor in a lengthwise direction to move toner away from the center portion.

Abstract: A developing device includes a toner storage area containing toner, a developing portion in which a developing roller is installed, and a housing including a toner supply window to connect the toner storage area and the developing portion. A pair of rails is disposed on the toner supply window to extend in a lengthwise direction of the developing roller, and a blocking member including a blocking portion is provided to open and close the toner supply window when the blocking member is removed from and inserted into the pair of rails from outside of the housing, respectively.

Abstract: Disclosed is a light emitting device including a first conductive type semiconductor layer; a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer; and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the active layer comprising quantum well layers and quantum barrier layers, wherein each of the quantum well barrier layers comprises first barrier layers and a second barrier layer disposed between the first barrier layers, and an energy bandgaps of the second barrier layer is larger than energy bandgaps of the quantum well layers and smaller than energy bandgaps of the first barrier layers.