Patents by Inventor Dae Seob Han
Dae Seob Han has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11621369Abstract: A semiconductor device can define a plurality of points on the basis of an In ion concentration, a first dopant concentration, and a second dopant concentration, and identify each layer on the basis of a region between the points defined as above. The Mg concentration in a specific layer may increase along a specific direction and then decrease.Type: GrantFiled: December 26, 2018Date of Patent: April 4, 2023Assignee: SUZHOU LEKIN SEMICONDUCTOR CO., LTD.Inventors: Dae Seob Han, Kwang Sun Baek, Young Suk Song
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Patent number: 11424329Abstract: A semiconductor device including first to fourth points defined using In ion intensity, Si concentration, and C concentration obtained from SIMS data. The active layer of the device is a first region between the first point and the second point. In addition, the C concentration in a third region between the third point and the fourth point is higher than the C concentration in a second region adjacent to the fourth region along a second direction. Also, the Si concentration in the second region is higher than the Si concentration in the third region.Type: GrantFiled: December 21, 2018Date of Patent: August 23, 2022Assignee: SUZHOU LEKIN SEMICONDUCTOR CO., LTD.Inventors: Dae Seob Han, Kwang Sun Baek, Young Suk Song
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Publication number: 20210367041Abstract: A semiconductor device comprises: a first conductive semiconductor layer; an active layer; and a second conductive semiconductor layer, wherein the semiconductor device includes first to fourth points that are defined by using In ion intensity, Si concentration, and C concentration which are obtained from SIMS data. The active layer may be a first region between the first point and the second point. The C concentration in a third region between the third point and the fourth point may be higher than the C concentration in a second region adjacent to the fourth region along a second direction. The Si concentration in the second region may be higher than the Si concentration in the third region.Type: ApplicationFiled: December 21, 2018Publication date: November 25, 2021Applicant: SUZHOU LEKIN SEMICONDUCTOR CO., LTD.Inventors: Dae Seob HAN, Kwang Sun BAEK, Young Suk SONG
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Publication number: 20210126162Abstract: A semiconductor device can define a plurality of points on the basis of an In ion concentration, a first dopant concentration, and a second dopant concentration, and identify each layer on the basis of a region between the points defined as above. The Mg concentration in a specific layer may increase along a specific direction and then decrease.Type: ApplicationFiled: December 26, 2018Publication date: April 29, 2021Inventors: Dae Seob HAN, Kwang Sun BAEK, Young Suk SONG
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Patent number: 10446715Abstract: Disclosed herein is a semiconductor device. The semiconductor device includes a substrate, a first conductive type semiconductor layer disposed over the substrate, an active layer disposed over the first conductive type semiconductor layer, and a second conductive type semiconductor layer disposed over the active layer. The first conductive type semiconductor layer includes a first layer, a second layer and a third layer having different composition ratios of indium (In). The first semiconductor layer is disposed close to the active layer. The second semiconductor layer is disposed under the first semiconductor layer. The third semiconductor layer is disposed under the second semiconductor layer. In content is reduced from the active layer to the third semiconductor layer, and In content of the third semiconductor layer may be 5% or more to 10% or less of that of the active layer.Type: GrantFiled: November 2, 2017Date of Patent: October 15, 2019Assignee: LG INNOTEK CO., LTD.Inventors: Kwang Sun Baek, Jong Ho Na, Dae Seob Han, Jung Hyun Hwang
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Publication number: 20190259913Abstract: Disclosed herein is a semiconductor device. The semiconductor device includes a substrate, a first conductive type semiconductor layer disposed over the substrate, an active layer disposed over the first conductive type semiconductor layer, and a second conductive type semiconductor layer disposed over the active layer. The first conductive type semiconductor layer includes a first layer, a second layer and a third layer having different composition ratios of indium (In). The first semiconductor layer is disposed close to the active layer. The second semiconductor layer is disposed under the first semiconductor layer. The third semiconductor layer is disposed under the second semiconductor layer. In content is reduced from the active layer to the third semiconductor layer, and In content of the third semiconductor layer may be 5% or more to 10% or less of that of the active layer.Type: ApplicationFiled: November 2, 2017Publication date: August 22, 2019Applicant: LG INNOTEK CO., LTD.Inventors: Kwang Sun BAEK, Jong Ho NA, Dae Seob HAN, Jung Hyun HWANG
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Patent number: 9768346Abstract: A light-emitting device and a lighting system includes a first conductivity type semiconductor layer, a gallium nitride-based super lattice layer on the first conductivity type semiconductor layer, an active layer, on the gallium nitride-based super lattice layer, a second conductivity type gallium nitride-based layer on the active layer, and a second conductivity type semiconductor layer, on the second conductivity type gallium nitride-based layer. The second conductivity type gallium nitride-based layer can include a second conductivity type AlxGa(1?x)N/AlyGa(1?y)N, such as AlxGa(1?x)N/AlyGa(1?y)N, on the active layer.Type: GrantFiled: October 22, 2013Date of Patent: September 19, 2017Assignee: LG INNOTEK CO., LTD.Inventors: Dae Seob Han, Yong Tae Moon, Kwang Sun Baek, A Ra Cho
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Patent number: 9431575Abstract: The embodiment relates to a light-emitting device, a method of manufacturing the same, a light-emitting device package, and a lighting system. A light-emitting device according to the embodiment may include: a first conductive semiconductor layer; a gallium nitride-based superlattice layer on the first conductive semiconductor layer; an active layer on the gallium nitride-based superlattice layer; a second conductive gallium nitride-based layer on the active layer; and a second conductive semiconductor layer on the second conductive gallium nitride-based layer. The second conductive gallium nitride-based layer may include a second conductive GaN layer having a first concentration, a second conductive InxAlyGa(1-x-y)N (0<x<1, 0<y<1) layer having a second concentration and a second conductive AlzGa(1-z)N (0<z<1) layer having a third concentration on the active layer.Type: GrantFiled: October 8, 2013Date of Patent: August 30, 2016Assignee: LG INNOTEK CO., LTD.Inventors: Dae Seob Han, Yong Tae Moon, Kwang Sun Baek, A Ra Cho
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Patent number: 9337383Abstract: Disclosed is a light emitting device including a first conductive type semiconductor layer; a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer; and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the active layer comprising quantum well layers and quantum barrier layers, wherein each of the quantum well barrier layers comprises first barrier layers and a second barrier layer disposed between the first barrier layers, and an energy bandgaps of the second barrier layer is larger than energy bandgaps of the quantum well layers and smaller than energy bandgaps of the first barrier layers.Type: GrantFiled: February 24, 2012Date of Patent: May 10, 2016Assignees: LG Innotek Co., Ltd., Industry-University Cooperation Foundation Hanyang University Erica CampusInventors: Dae Seob Han, Yong Tae Moon, Jong-In Shim
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Patent number: 9312433Abstract: Embodiments of the present invention include a light emitting element, a method for manufacturing the light-emitting element according to one embodiment of the present invention, comprises: a first conductive semiconductor layer 112; a GaN-based superlattice layer 124 on the first conductive semiconductor layer 112; an active layer 114 on the GaN-based superlattice layer 124; and a second conductive semiconductor layer 116 on the active layer 114, wherein the GaN-based superlattice layer 124 has a bandgap energy level that varies in a direction from the first conductive semiconductor layer 112 to the active layer 114.Type: GrantFiled: September 24, 2013Date of Patent: April 12, 2016Assignee: LG INNOTEK CO., LTD.Inventors: Dae Seob Han, Yong Tae Moon, A Ra Cho, Kwang Sun Baek
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Patent number: 9166100Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure having a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers. The active layer includes a plurality of well layers and barrier layers. An outermost barrier layer of the barrier layers includes a plurality of first layers; and a plurality of second layers.Type: GrantFiled: January 6, 2012Date of Patent: October 20, 2015Assignee: LG INNOTEK CO., LTD.Inventors: Dae Seob Han, Yong Tae Moon, Ha Jong Bong
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Publication number: 20150287876Abstract: One embodiment of the present invention relates to a light-emitting device, a method for manufacturing the light-emitting device, a light-emitting device package, and a lighting system. The light-emitting device, according to the one embodiment, comprises: a first conductive semiconductor layer (112); a gallium nitride-based super lattice layer (124) on the first conductive semiconductor layer (112); an active layer (114) on the gallium nitride-based super lattice layer (124); a second conductive gallium nitride-based layer on the active layer (114); and a second conductive semiconductor layer (116) on the second conductive gallium nitride-based layer, wherein the second conductive gallium nitride-based layer can include a second conductive AlxGa(1-x)N/AlyGa(1-y)N (here, AlxGa(1-x)N/AlyGa(1-y)N) on the active layer (114).Type: ApplicationFiled: October 22, 2013Publication date: October 8, 2015Applicant: LG INNOTEK CO., LTD.Inventors: Dae Seob Han, Yong Tae Moon, Kwang Sun Baek, A Ra Cho
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Publication number: 20150270436Abstract: The embodiment relates to a light-emitting device, a method of manufacturing the same, a light-emitting device package, and a lighting system. A light-emitting device according to the embodiment may include: a first conductive semiconductor layer; a gallium nitride-based superlattice layer on the first conductive semiconductor layer; an active layer on the gallium nitride-based superlattice layer; a second conductive gallium nitride-based layer on the active layer; and a second conductive semiconductor layer on the second conductive gallium nitride-based layer. The second conductive gallium nitride-based layer may include a second conductive GaN layer having a first concentration, a second conductive InxAlyGa(1-x-y)N (0<x<1, 0<y<1) layer having a second concentration and a second conductive AlzGa(1-z)N (0<z<1) layer having a third concentration on the active layer.Type: ApplicationFiled: October 8, 2013Publication date: September 24, 2015Applicant: LG INNOTEK CO., LTD.Inventors: Dae Seob Han, Yong Tae Moon, Kwang Sun Baek, A Ra Cho
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Publication number: 20150255669Abstract: Embodiments of the present invention include a light emitting element, a method for manufacturing the light-emitting element according to one embodiment of the present invention, comprises: a first conductive semiconductor layer 112; a GaN-based superlattice layer 124 on the first conductive semiconductor layer 112; an active layer 114 on the GaN-based superlattice layer 124; and a second conductive semiconductor layer 116 on the active layer 114, wherein the GaN-based superlattice layer 124 has a bandgap energy level that varies in a direction from the first conductive semiconductor layer 112 to the active layer 114.Type: ApplicationFiled: September 24, 2013Publication date: September 10, 2015Applicant: LG INNOTEK CO., LTD.Inventors: Dae Seob Han, Yong Tae Moon, A Ra Cho, Kwang Sun Baek
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Patent number: 8987757Abstract: Disclosed are a light emitting device and a lighting system having the same. The light emitting device includes a first conductivity-type semiconductor layer, an interfacial layer including at least two superlattice structures adjacent to the first conductivity-type semiconductor layer, an active layer adjacent to the interfacial layer, and a second conductivity-type semiconductor layer adjacent to the active layer. The first conductivity-type semiconductor layer, interfacial layer, active layer, and second conductivity-type semiconductor layer are stacked in a same direction, the first and second semiconductor layer are of different conductivity types, an energy band gap of the superlattice structure adjacent to the active layer is smaller than an energy band gap of the superlattice structure adjacent to the first conductivity-type semiconductor layer.Type: GrantFiled: November 3, 2011Date of Patent: March 24, 2015Assignee: LG Innotek Co., Ltd.Inventors: Yong Tae Moon, Dae Seob Han, Jeong Sik Lee
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Patent number: 8779425Abstract: A light emitting device, a light emitting device package, and a lighting system are provided. The light emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers. The active layer includes a first active layer adjacent to the second conductive type semiconductor layer, a second active layer adjacent to the first conductive type semiconductor layer, and a gate quantum barrier between the first and second active layers.Type: GrantFiled: March 26, 2013Date of Patent: July 15, 2014Assignee: LG Innotek Co., Ltd.Inventors: Yong Tae Moon, Jeong Sik Lee, Dae Seob Han
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Publication number: 20130228746Abstract: A light emitting device, a light emitting device package, and a lighting system are provided. The light emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers. The active layer includes a first active layer adjacent to the second conductive type semiconductor layer, a second active layer adjacent to the first conductive type semiconductor layer, and a gate quantum barrier between the first and second active layers.Type: ApplicationFiled: March 26, 2013Publication date: September 5, 2013Inventors: Yong Tae MOON, Jeong Sik LEE, Dae Seob HAN
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Patent number: 8421075Abstract: A light emitting device, a light emitting device package, and a lighting system are provided. The light emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers. The active layer includes a first active layer adjacent to the second conductive type semiconductor layer, a second active layer adjacent to the first conductive type semiconductor layer, and a gate quantum barrier between the first and second active layers.Type: GrantFiled: July 7, 2011Date of Patent: April 16, 2013Assignee: LG Innotek Co., Ltd.Inventors: Yong Tae Moon, Jeong Sik Lee, Dae Seob Han
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Publication number: 20120319079Abstract: Disclosed is a light emitting device including a first conductive type semiconductor layer; a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer; and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the active layer comprising quantum well layers and quantum barrier layers, wherein each of the quantum well barrier layers comprises first barrier layers and a second barrier layer disposed between the first barrier layers, and an energy bandgaps of the second barrier layer is larger than energy bandgaps of the quantum well layers and smaller than energy bandgaps of the first barrier layers.Type: ApplicationFiled: February 24, 2012Publication date: December 20, 2012Inventors: Dae Seob HAN, Yong Tae Moon, Jong-In Shim
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Patent number: 8212265Abstract: Disclosed is a light emitting device including, a light emitting structure that has a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, wherein the active layer is provided between the first conductive semiconductor layer and the second conductive semiconductor layer, and includes a plurality of well layers and at least one barrier layer, wherein the barrier layer includes a first nitride layer and a second nitride layer provided on the first nitride layer, and wherein the first nitride layer has a larger energy band gap than the second nitride layer while the energy band gap of the second nitride layer is larger than that of each well layer.Type: GrantFiled: July 28, 2011Date of Patent: July 3, 2012Assignee: LG Innotek Co., Ltd.Inventors: Dae Seob Han, Yong Tae Moon