Abstract: The invention provides methods for the synthesis of a halichondrin macrolides through a macrocyclization strategy. The macrocyclization strategy of the present invention involves subjecting a non-macrocyclic intermediate to a carbon-carbon bond-forming reaction (e.g., an olefination reaction (e.g., Homer-Wadsworth-Emmons olefination), catalytic Ring-Closing Olefin Metathesis, or Nozaki-Hiyama-Kishi reaction) to afford a macrocyclic macrolide. The invention also provides compounds useful as intermediates in the synthesis of a halichondrin macrolides and methods for preparing the same.

Abstract: The invention provides methods for the synthesis of eribulin or a pharmaceutically acceptable salt thereof (e.g., eribulin mesylate) through a macrocyclization strategy. The macrocyclization strategy of the present invention involves subjecting a non-macrocyclic intermediate to a carbon-carbon bond-forming reaction (e.g., an olefination reaction (e.g., Horner-Wadsworth-Emmons olefination), Dieckmann reaction, catalytic Ring-Closing Olefin Metathesis, or Nozaki-Hiyama-Kishi reaction) to afford a macrocyclic intermediate. The invention also provides compounds useful as intermediates in the synthesis of eribulin or a pharmaceutically acceptable salt thereof and methods for preparing the same.

Abstract: Magnetic random access memory (MRAM)-based frame buffering apparatus are provided that may reduce a size and power consumption thereof by using a pixel self-refresh (PSR) method. The MRAM-based frame buffering apparatus includes a frame buffer memory including magnetic random access memory (MRAM). The frame buffer memory stores at least one piece of frame data. The MRAM-based frame buffering apparatus further includes a magnetic field sensor configured to detect an external magnetic field; and a frame buffer controller configured to control the storing of the at least one piece of frame data according to the intensity of the detected external magnetic field.

Abstract: The invention provides methods for the synthesis of eribulin or a pharmaceutically acceptable salt thereof (e.g., eribulin mesylate) through a macrocyclization strategy. The macrocyclization strategy of the present invention involves subjecting a non-macrocyclic intermediate to a carbon-carbon bond-forming reaction (e.g., an olefination reaction (e.g., Homer-Wadsworth-Emmons olefination), Dieckmann reaction, catalytic Ring-Closing Olefin Metathesis, or Nozaki-Hiyama-Kishi reaction) to afford a macrocyclic intermediate. The invention also provides compounds useful as intermediates in the synthesis of eribulin or a pharmaceutically acceptable salt thereof and methods for preparing the same.

Abstract: In an MRAM device, the MRAM includes a magnetic tunnel junction (MTJ) structure and a protection layer on a sidewall of the MTJ structure. The protection layer includes a fluorinated metal oxide. When an MRAM device in accordance with example embodiments is manufactured, a metal layer may be formed to cover a MTJ structure. The metal layer may be oxidized and fluorinated to form the protection layer. A free layer pattern included in the MTJ structure may not be oxidized and the metal layer may be fully oxidized. Because the free layer pattern is not oxidized, the MTJ structure has a good TMR. Because the metal layer is fully oxidized, the MRAM device may be prevented from electrical short between the free layer pattern and a fixed layer pattern.

Abstract: A semiconductor memory device includes a shorted variable resistor element in a memory cell. The semiconductor memory device includes main cells and reference cells each including a cell transistor and a variable resistor element. The variable resistor element of the reference cell is shorted by applying a breakdown voltage of a magnetic tunnel junction (MTJ) element, connection in parallel to a conductive via element, connection to a reference bit line at a node between the cell transistor and the variable resistor element, or replacement of the variable resistor element with the conductive via element. A sense amplifier increases a sensing margin of the main cell by detecting and amplifying a current flowing in a bit line of the main cell and a current flowing in the reference bit line to which a reference resistor is connected.

Abstract: A semiconductor memory device includes a shorted variable resistor element in a memory cell. The semiconductor memory device includes main cells and reference cells each including a cell transistor and a variable resistor element. The variable resistor element of the reference cell is shorted by applying a breakdown voltage of a magnetic tunnel junction (MTJ) element, connection in parallel to a conductive via element, connection to a reference bit line at a node between the cell transistor and the variable resistor element, or replacement of the variable resistor element with the conductive via element. A sense amplifier increases a sensing margin of the main cell by detecting and amplifying a current flowing in a bit line of the main cell and a current flowing in the reference bit line to which a reference resistor is connected.

Abstract: The invention provides methods for the synthesis of eribulin or a pharmaceutically acceptable salt thereof (e.g., eribulin mesylate) through a macrocyclization strategy. The macrocyclization strategy of the present invention involves subjecting a non-macrocyclic intermediate to a carbon-carbon bond-forming reaction (e.g., an olefination reaction (e.g., Homer-Wadsworth-Emmons olefination), Dieckmann reaction, catalytic Ring-Closing Olefin Metathesis, or Nozaki-Hiyama-Kishi reaction) to afford a macrocyclic intermediate. The invention also provides compounds useful as intermediates in the synthesis of eribulin or a pharmaceutically acceptable salt thereof and methods for preparing the same.

Abstract: Magnetic random access memory (MRAM)-based frame buffering apparatus are provided that may reduce a size and power consumption thereof by using a pixel self-refresh (PSR) method. The MRAM-based frame buffering apparatus includes a frame buffer memory including magnetic random access memory (MRAM). The frame buffer memory stores at least one piece of frame data. The MRAM-based frame buffering apparatus further includes a magnetic field sensor configured to detect an external magnetic field; and a frame buffer controller configured to control the storing of the at least one piece of frame data according to the intensity of the detected external magnetic field.

Abstract: Provided are compounds and methods useful for the preparation of compounds useful as inhibitors of beta-site amyloid precursor protein (APP)-cleaving enzyme.

Abstract: A transistor includes a substrate, a gate structure and impurity regions. The substrate is divided into a field region and an active region by an isolation layer pattern. The field region has the isolation layer pattern thereon, and the active region has no isolation layer pattern thereon. The gate structure includes a central portion and an edge portion. The central portion is on a middle portion of the active region along a first direction and has a first width in a second direction substantially perpendicular to the first direction. The edge portion is on at least one end portion of the active region in the first direction and connected to the central portion and has a second width smaller than the first width in the second direction. The impurity regions are at upper portions of the active region adjacent to both end portions of the gate structure in the second direction.

Abstract: In an MRAM device, the MRAM includes a magnetic tunnel junction (MTJ) structure and a protection layer on a sidewall of the MTJ structure. The protection layer includes a fluorinated metal oxide. When an MRAM device in accordance with example embodiments is manufactured, a metal layer may be formed to cover a MTJ structure. The metal layer may be oxidized and fluorinated to form the protection layer. A free layer pattern included in the MTJ structure may not be oxidized and the metal layer may be fully oxidized. Because the free layer pattern is not oxidized, the MTJ structure has a good TMR. Because the metal layer is fully oxidized, the MRAM device may be prevented from electrical short between the free layer pattern and a fixed layer pattern.

Abstract: Disclosed is a luminance enhancement film which is suitable for use in a display and includes a multilayered thin film and a uniaxially drawn film formed on one surface of the multilayered thin film.

Abstract: The present invention relates to an optical sheet for use in a liquid crystal display. The optical sheet of the present invention allows for ease of handling, reduces defective proportions and manufacturing costs, improves throughput, and prevents the deterioration of luminance attributable to the damage of the optical sheet.

Abstract: Provided are compounds and methods useful for the preparation of compounds useful as inhibitors of beta-site amyloid precursor protein (APP)-cleaving enzyme.

Abstract: Provided are compounds and methods useful for the preparation of compounds useful as inhibitors of beta-site amyloid precursor protein (APP)-cleaving enzyme.

Abstract: The present invention relates to an optical sheet for use in a liquid crystal display. The optical sheet of the present invention allows for ease of handling, reduces defective proportions and manufacturing costs, improves throughput, and prevents the deterioration of luminance attributable to the damage of the optical sheet.

Abstract: An optical sheet having a structured surface and a composition for forming optical three-dimensional patterns able to form the structured surface, which is not easily damaged by external force or a rough surface and thus facilitates the handling thereof, reduces defective rates to thus decrease the production cost and increase the production efficiency, and prevents a decrease in luminance attributable to damage.

Abstract: Provided are compounds and methods useful for the preparation of compounds useful as inhibitors of beta-site amyloid precursor protein (APP)-cleaving enzyme.

Abstract: The present invention relates to a luminance-enhanced film used for displays. The present invention provides a luminance enhancement film including a multilayer thin film, which can ensure the reliability to external environmental changes, such as temperature change and the like, and a backlight unit including the luminance enhancement film.