Patents by Inventor Dae-Shik Woo

Dae-Shik Woo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making low leakage N-channel SOS transistors utilizing positive photoresist masking techniques
    Patent number: 4393572
    Abstract: A self-aligned method of implanting the edges of NMOS/SOS transistors is described. The method entails covering the silicon islands with a thick oxide layer, applying a protective photoresist layer over the thick oxide layer, and exposing the photoresist layer from the underside of the sapphire substrate thereby using the island as an exposure mask. Only the photoresist on the islands' edges will be exposed. The exposed photoresist is then removed and the thick oxide is removed from the islands edges which are then implanted.
    Type: Grant
    Filed: May 29, 1980
    Date of Patent: July 19, 1983
    Assignee: RCA Corporation
    Inventors: Steven G. Policastro, Dae-Shik Woo