Abstract: Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, a first thin insulating layer, and a second conductive type semiconductor layer. The active layer is formed on the first conductive type semiconductor layer. The first thin insulating layer is formed on the active layer. The second conductive type semiconductor layer is formed on the thin insulating layer.

Abstract: Provided is a light emitting device according to one embodiment including: a substrate which has protrusions on the C-face, and of which unit cells are constructed in a hexagonal structure; a semiconductor layer which is formed on the substrate, in which empty spaces are formed in sides of the protrusions, and of which unit cells are constructed in a hexagonal structure; and a light emitting structure layer comprising a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer formed between the first conductive semiconductor layer and second conductive semiconductor layer which are formed on the semiconductor layer, wherein the A-face of the substrate and the A-face of the semiconductor layer form an angle of greater than zero degree, and the protrusions include the R-faces.

Abstract: A light-emitting device has a first light-emitting structure a second light-emitting structure on a top surface of the first light-emitting structure, an insulation layer between a top surface of the first light-emitting structure and a bottom surface of the second light-emitting structure; and a first electrode contacted with the second conductive type semiconductor layer and the third conductive type semiconductor layer. The first electrode contacts the insulation layer and the first electrode has a thickness thicker than that of the insulating layer.

Abstract: Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, a first thin insulating layer, and a second conductive type semiconductor layer. The active layer is formed on the first conductive type semiconductor layer. The first thin insulating layer is formed on the active layer. The second conductive type semiconductor layer is formed on the thin insulating layer.

Abstract: A light emitting diode (LED) lamp includes an emission unit comprising one or more LED light-emitting devices and a circuit substrate whereon the one or more LED light-emitting devices are mounted; a heat dissipating member whereon the emission unit is mounted and that dissipates heat generated by the emission unit; and a light-transmitting lamp cover directly contacting the heat dissipating member and coupled with the heat dissipating member so as to cover the emission unit, wherein the lamp cover is formed of a light-transmitting material having a thermal conductivity equal to or greater than 9 W/m·K?1.

Abstract: Provided are a light emitting device, a method of manufacturing the light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a reflective layer including a first GaN-based semiconductor layer having a first refractive index, a second GaN-based semiconductor layer having a second refractive index less than the first refractive index, and a third GaN-based semiconductor layer having a third refractive index less than the second refractive index and a light emitting structure layer including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer on the reflective layer.

Abstract: Provided are a light emitting device and a method of fabricating the same. The light emitting device comprises: a first conductive semiconductor layer; an active layer comprising an InGaN well layer and a GaN barrier layer on the first conductive semiconductor layer; and a second conductive semiconductor layer on the active layer. The GaN barrier layer comprises an AlGaN layer.

Abstract: A semiconductor light emitting device is provided. The semiconductor light emitting device includes a first nitride layer, an active layer, and a second nitride layer. The first nitride layer includes an irregular, uneven surface, and the active layer is formed on the irregular, uneven surface. The second nitride layer is formed on the active layer. A plurality of quantum dots are formed at the active layer.

Abstract: Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, a first thin insulating layer, and a second conductive type semiconductor layer. The active layer is formed on the first conductive type semiconductor layer. The first thin insulating layer is formed on the active layer. The second conductive type semiconductor layer is formed on the thin insulating layer.

Abstract: A method for manufacturing a light emitting device according to an embodiment of the present invention includes preparing a growth substrate; selectively forming a projection pattern on the growth substrate; forming a first conductive type semiconductor layer on the growth substrate and the projection pattern; forming an active layer on the first conductive type semiconductor layer; forming a second conductive type semiconductor layer on the active layer; and executing an isolation etching for selectively removing the first conductive type semiconductor layer, the active layer, and the second conductive type semiconductor layer including the projection pattern.

Abstract: Provided are a semiconductor light emitting device and a method of fabricating the same. The semiconductor light emitting device comprises a multireflection layer comprising at least one of reflection layers of different refractive indices, a first conductive semiconductor layer on the multireflection layers, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer.

Abstract: Provided are a light emitting device and a method of fabricating the same. The light emitting device comprises: a first conductive semiconductor layer; an active layer comprising an InGaN well layer and a GaN barrier layer on the first conductive semiconductor layer; and a second conductive semiconductor layer on the active layer. The GaN barrier layer comprises an AlGaN layer.

Abstract: A semiconductor light emitting device is provided. The semiconductor light emitting device includes a first nitride layer, an active layer, and a second nitride layer. The first nitride layer includes an irregular, uneven surface, and the active layer is formed on the irregular, uneven surface. The second nitride layer is formed on the active layer. A plurality of quantum dots are formed at the active layer.

Abstract: Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, a first thin insulating layer, and a second conductive type semiconductor layer. The active layer is formed on the first conductive type semiconductor layer. The first thin insulating layer is formed on the active layer. The second conductive type semiconductor layer is formed on the thin insulating layer.

Abstract: A light emitting device according to an embodiment of the present invention includes a first conductive semiconductor layer providing a roughness on a upper surface thereof and including a PEC etching control layer; an active layer under the first conductive semiconductor layer; a second conductive semiconductor layer under the active layer; a reflective electrode electrically connected to the second conductive semiconductor layer; and a first electrode electrically connected to the first conductive semiconductor layer.

Abstract: A light emitting diode (LED) lamp includes an emission unit comprising one or more LED light-emitting devices and a circuit substrate whereon the one or more LED light-emitting devices are mounted; a heat dissipating member whereon the emission unit is mounted and that dissipates heat generated by the emission unit; and a light-transmitting lamp cover directly contacting the heat dissipating member and coupled with the heat dissipating member so as to cover the emission unit, wherein the lamp cover is formed of a light-transmitting material having a thermal conductivity equal to or greater than 9 W/m·K?1.

Abstract: A light emitting diode (LED) lamp includes an emission unit comprising one or more LED light-emitting devices and a circuit substrate whereon the one or more LED light-emitting devices are mounted; a heat dissipating member whereon the emission unit is mounted and that dissipates heat generated by the emission unit; and a light-transmitting lamp cover directly contacting the heat dissipating member and coupled with the heat dissipating member so as to cover the emission unit, wherein the lamp cover is formed of a light-transmitting material having a thermal conductivity equal to or greater than 9 W/m·K?1.

Abstract: Provided are a light emitting device and a method for manufacturing the same. The light emitting device comprises a first conductive type semiconductor layer, an active layer, a second conductive type semiconductor layer, and a light extraction layer. The active layer is formed on the first conductive type semiconductor layer. The second conductive type semiconductor layer is formed on the active layer. The light extraction layer is formed on the second conductive type semiconductor layer. The light extraction layer has a refractive index smaller than or equal to a refractive index of the second conductive type semiconductor layer.

Abstract: Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a first semiconductor layer doped with N type dopants, a first active layer on the first semiconductor layer, a second semiconductor layer doped with P type dopants on the first active layer, a second active layer on the second semiconductor layer, and a third semiconductor layer doped with N type dopants on the second active layer. A thickness of the second semiconductor layer is in a range of about 2000 ?to about 4000 ?, and doping concentration of the P type dopants doped in the second semiconductor layer is in a range of about 1018cm?3 to about 1021cm?3.

Abstract: Disclosed is a method of manufacturing a light emitting device. The light emitting device includes a nitride semiconductor layer, an electrode on the nitride semiconductor layer, a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer under the nitride semiconductor layer, and a conductive layer under the light emitting structure. The nitride semiconductor layer has band gap energy lower than band gap energy of the first conductive type semiconductor layer.