Abstract: A semiconductor device includes a substrate, a counter-doping region, and a Schottky barrier diode (SBD) in which a breakdown voltage is improved by using counter doping, and a manufacturing method thereof. A breakdown voltage may be improved by lowering a concentration of impurity on the region and enhancing the characteristics of the semiconductor device including the SBD.

Abstract: A semiconductor device includes a substrate, a counter-doping region, and a Schottky barrier diode (SBD) in which a breakdown voltage is improved by using counter doping, and a manufacturing method thereof. A breakdown voltage may be improved by lowering a concentration of impurity on the region and enhancing the characteristics of the semiconductor device including the SBD.

Abstract: A semiconductor device includes a substrate, a counter-doping region, and a Schottky barrier diode (SBD) in which a breakdown voltage is improved by using counter doping, and a manufacturing method thereof. A breakdown voltage may be improved by lowering a concentration of impurity on the region and enhancing the characteristics of the semiconductor device including the SBD.

Abstract: A method for fabricating a semiconductor device is disclosed. A plurality of trenches is formed at a predetermined cell pitch in an upper surface portion of a substrate. A first insulation film is formed on the substrate. A gate electrode is formed and partially filled within each trench. A first conductivity type region is formed in the upper surface portion of the substrate between the trenches. A second conductivity type region is formed in a side surface of the substrate between the trenches and the first conductivity type region. A second insulation film is formed covering the gate electrode within each trench, wherein an upper surface of the second insulation film is positioned lower than an upper surface of the substrate. A source metal layer is formed on the second insulation film and electrically connected to the first conductivity type region and the second conductivity type region.

Abstract: A method for fabricating a semiconductor device is disclosed. A plurality of trenches is formed at a predetermined cell pitch in an upper surface portion of a substrate. A first insulation film is formed on the substrate. A gate electrode is formed within each trench, wherein the gate electrode partially fills each trench. A first conductivity type region is formed in the upper surface portion of the substrate between the trenches. A second conductivity type region is formed in a side surface of the substrate between the trenches and the first conductivity type region. A second insulation film is formed covering the gate electrode within each trench, wherein an upper surface of the second insulation film is positioned lower than an upper surface of the substrate. A source metal layer is formed on the second insulation film. The source metal layer is electrically connected to the first conductivity type region and the second conductivity type region.

Abstract: A semiconductor device includes a substrate, a counter-doping region, and a Schottky barrier diode (SBD) in which a breakdown voltage is improved by using counter doping, and a manufacturing method thereof. A breakdown voltage may be improved by lowering a concentration of impurity on the region and enhancing the characteristics of the semiconductor device including the SBD.