Patents by Inventor Dae-Won Moon

Dae-Won Moon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silicon thin film structure for optoelectronic devices and method for fabricating the same
    Patent number: 6483861
    Abstract: Disclosed are a silicon thin film structure for optoelectronic devices and a method for manufacturing the same. The silicon thin film structure for optoelectronic devices, comprises a multi-layered structure consisting of a plurality of structural units, each comprising: a silicon base layer; and a luminescent, rare earth element-doped silica layer on said silicon base layer, or a multi-layered structure consisting of a plurality of structural units, each comprising: a silicon base layer; a lower undoped silica buffer layer for restraining the silicon layer from absorbing emitted light on said silicon base layer; a luminescent, rare earth element-doped silica layer for emitting light on said lower undoped silica buffer layer; and an upper, undoped silica buffer layer for restraining the silicon from absorbing emitted light on said luminescent, doped silica layer.
    Type: Grant
    Filed: May 18, 2001
    Date of Patent: November 19, 2002
    Assignee: Korea Research Institute of Standards & Science
    Inventor: Dae-Won Moon
  • Silicon thin film structure for optoelectronic devices and method for fabricating the same
    Publication number: 20020117673
    Abstract: Disclosed are a silicon thin film structure for optoelectronic devices and a method for manufacturing the same. The silicon thin film structure for optoelectronic devices, comprises a multi-layered structure consisting of a plurality of structural units, each comprising: a silicon base layer; and a luminescent, rare earth element-doped silica layer on said silicon base layer, or a multi-layered structure consisting of a plurality of structural units, each comprising: a silicon base layer; a lower undoped silica buffer layer for restraining the silicon layer from absorbing emitted light on said silicon base layer; a luminescent, rare earth element-doped silica layer for emitting light on said lower undoped silica buffer layer; and an upper, undoped silica buffer layer for restraining the silicon from absorbing emitted light on said luminescent, doped silica layer.
    Type: Application
    Filed: May 18, 2001
    Publication date: August 29, 2002
    Inventor: Dae-Won Moon