Abstract: A method for reducing surface defects of a semiconductor substrate comprising selectively etching an insulation film formed on a semiconductor substrate and forming a contact hole, forming a conductive layer in a contact hole and on the upper surface of the insulation film, performing a Chemical Mechanical Polishing process on the conductive layer to expose the upper surface of the insulation film and forming a conductive layer plug in the contact hole, forming an oxide film on the upper surface of the conductive plug, and washing the conductive layer plug and the surface of the insulation film. In order to reduce surface defects of a semiconductor substrate, an oxide film is formed on the surface of the semiconductor substrate during the Chemical Mechanical Polishing process or after the Chemical Mechanical Polishing process, so that the efficiency of the post-washing process is heightened and the surface defects of the substrate is reduced.

Abstract: A method for reducing surface defects of a semiconductor substrate comprising selectively etching an insulation film formed on a semiconductor substrate and forming a contact hole, forming a conductive layer in a contact hole and on the upper surface of the insulation film, performing a Chemical Mechanical Polishing process on the conductive layer to expose the upper surface of the insulation film and forming a conductive layer plug in the contact hole, forming an oxide film on the upper surface of the conductive plug, and washing the conductive layer plug and the surface of the insulation film. In order to reduce surface defects of a semiconductor substrate, an oxide film is formed on the surface of the semiconductor substrate during the Chemical Mechanical Polishing process or after the Chemical Mechanical Polishing process, so that the efficiency of the post-washing process is heightened and the surface defects of the substrate is reduced.