Abstract: A decoding device may determine a candidate data unit among a plurality of data units included in one data chunk, in parallel with an operation of decoding a target data unit among the plurality of data units. The decoding device may determine whether to decode the candidate data unit, and may decode the candidate data unit according to whether to decode the candidate data unit, after executing decoding on the target data unit.

Abstract: A decoding device may determine a candidate data unit among a plurality of data units included in one data chunk, in parallel with an operation of decoding a target data unit among the plurality of data units. The decoding device may determine whether to decode the candidate data unit, and may decode the candidate data unit according to whether to decode the candidate data unit, after executing decoding on the target data unit.

Abstract: A power module for energy recovery and sustain of a plasma display panel is disclosed. The power module includes a first high-voltage integrated circuit which is of a single type, a first switching element for receiving an output from the first high-voltage integrated circuit, and performing a switching operation in response to the output received from the first high-voltage integrated circuit, a first diode connected to one terminal of the first switching element, a second high-voltage integrated circuit which is of a single type, and is arranged symmetrically with the first high-voltage integrated circuit, a second switching element for receiving an output from the second high-voltage integrated circuit, and performing a switching operation in response to the output received from the second high-voltage integrated circuit, and a second diode connected to one terminal of the second switching element.

Abstract: An Insulated Gate Bipolar Transistor (IGBT) fault protection system is provided. The fault protection system includes a GVPA, a gate voltage clamper, and a soft-off unit. The GVPA analyzes a gate voltage pattern of an IGBT to determine whether or not a fault has occurred. The gate voltage clamper prevents an increase in a gate voltage of the IGBT according to an output signal that the GVPA outputs when a fault has occurred. The soft-off unit softly turns off the IGBT according to an output signal that the GVPA outputs when a fault has occurred.

Abstract: An Insulated Gate Bipolar Transistor (IGBT) fault protection system is provided. The fault protection system includes a GVPA, a gate voltage clamper, and a soft-off unit. The GVPA analyzes a gate voltage pattern of an IGBT to determine whether or not a fault has occurred. The gate voltage clamper prevents an increase in a gate voltage of the IGBT according to an output signal that the GVPA outputs when a fault has occurred. The soft-off unit softly turns off the IGBT according to an output signal that the GVPA outputs when a fault has occurred.

Abstract: A power module for energy recovery and sustain of a plasma display panel is disclosed. The power module includes a first high-voltage integrated circuit which is of a single type, a first switching element for receiving an output from the first high-voltage integrated circuit, and performing a switching operation in response to the output received from the first high-voltage integrated circuit, a first diode connected to one terminal of the first switching element, a second high-voltage integrated circuit which is of a single type, and is arranged symmetrically with the first high-voltage integrated circuit, a second switching element for receiving an output from the second high-voltage integrated circuit, and performing a switching operation in response to the output received from the second high-voltage integrated circuit, and a second diode connected to one terminal of the second switching element.

Abstract: A semiconductor power module in which a power circuit chip and a control circuit chip are integrated in a package, is provided. The semiconductor power module includes a case; a terminal inserted into the case, the terminal including portions protruding upward to the outside of the case, and portions exposed in the case; a first substrate to which the power circuit chip is attached, the first substrate attached to the case for encapsulating the bottom of the package; a second substrate to which the control circuit chip is attached, the second substrate being spaced from the first substrate at a predetermined interval in a perpendicular direction in the case; and a cover for covering the top of the case, and for encapsulating the top of the package.

Abstract: A semiconductor power module in which a power circuit chip and a control circuit chip are integrated in a package, is provided. The semiconductor power module includes a case; a terminal inserted into the case, the terminal including portions protruding upward to the outside of the case, and portions exposed in the case; a first substrate to which the power circuit chip is attached, the first substrate attached to the case for encapsulating the bottom of the package; a second substrate to which the control circuit chip is attached, the second substrate being spaced from the first substrate at a predetermined interval in a perpendicular direction in the case; and a cover for covering the top of the case, and for encapsulating the top of the package.