Patents by Inventor Daewoong Suh
Daewoong Suh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230398175Abstract: Provided is a dispersion composition containing: a dispersion medium; and particles containing a target substance, wherein the dispersion composition includes at least one type of surfactant having a critical micelle concentration or more and does not contain a solubilizer, and the target substance is cyclosporin A, which satisfies the S-parameter >1 defined above.Type: ApplicationFiled: November 4, 2021Publication date: December 14, 2023Applicant: SCAI THERAPEUTICSInventors: Chulhwan KIM, Kyoung-hee KIM, Daewoong SUH
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Publication number: 20230301910Abstract: Provided is a dispersion composition containing: a dispersion medium; and particles containing a target substance. The dispersion composition includes at least one type of surfactant having a critical micelle concentration or more and does not contains a solubilizer, and the target substance is cyclosporin A. Products such as pharmaceuticals, foods, beverages, and cosmetics, containing the dispersion composition are also disclosed.Type: ApplicationFiled: November 4, 2021Publication date: September 28, 2023Applicant: SCAI THERAPEUTICS CO., LTD.Inventors: Chulhwan KIM, Kyoung-hee KIM, Daewoong SUH
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Patent number: 11587972Abstract: A light emitting device including a substrate, first and second light emitting diodes (LEDs) each including first and second semiconductor layers, a first upper electrode disposed on the second LED, electrically connected to the first LED, and insulated from the second semiconductor layer of the first LED, and a second upper electrode disposed on the second LED, electrically connected to the second LED, and insulated from the second semiconductor layer of the second LED, in which a portion of the substrate between the LEDs does not overlap the semiconductor layers, the first upper electrode has a portion electrically connected to the second semiconductor layer of the second LED and covering the first portion and portions of the LEDs, and the second upper electrode has a groove partially enclosing the portion of the first upper electrode in a plan view.Type: GrantFiled: October 4, 2021Date of Patent: February 21, 2023Assignee: Seoul Viosys Co., Ltd.Inventors: Jong Min Jang, Jong Hyeon Chae, Joon Sup Lee, Daewoong Suh, Hyun A Kim, Won Young Roh, Min Woo Kang
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Patent number: 11565246Abstract: The devices, systems and techniques disclosed in this patent document include photocatalytic filter devices and can be used to provide a method for manufacturing a photocatalytic filter with improved adhesion. In addition, the present disclosure of this patent document includes technology to provide a method for reactivating a photocatalytic filter. Using the disclosed techniques, even if a photocatalytic filter is contaminated, the contaminated photocatalytic filter is easily reactivated while maintaining improved adhesion.Type: GrantFiled: February 25, 2019Date of Patent: January 31, 2023Assignee: SEOUL VIOSYS CO., LTD.Inventors: Daewoong Suh, Jaeseon Yi, Geundo Cho, Doug Youn Lee, Hye Kyung Ku, Kyung Sik Yoon
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Publication number: 20220028921Abstract: A light emitting device including a substrate, first and second light emitting diodes (LEDs) each including first and second semiconductor layers, a first upper electrode disposed on the second LED, electrically connected to the first LED, and insulated from the second semiconductor layer of the first LED, and a second upper electrode disposed on the second LED, electrically connected to the second LED, and insulated from the second semiconductor layer of the second LED, in which a portion of the substrate between the LEDs does not overlap the semiconductor layers, the first upper electrode has a portion electrically connected to the second semiconductor layer of the second LED and covering the first portion and portions of the LEDs, and the second upper electrode has a groove partially enclosing the portion of the first upper electrode in a plan view.Type: ApplicationFiled: October 4, 2021Publication date: January 27, 2022Inventors: Jong Min Jang, Jong Hyeon Chae, Joon Sup Lee, Daewoong Suh, Hyun A Kim, Won Young Roh, Min Woo Kang
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Patent number: 11139338Abstract: A light emitting device including a substrate, first and second light emitting diodes disposed thereon and including a first semiconductor layer, an active layer, and a second semiconductor layer, a first upper electrode electrically connected to the first semiconductor layer and insulated from the second semiconductor layer of the first light emitting diode, a second upper electrode electrically connected to the first semiconductor layer and insulated from the second semiconductor layer of the second light emitting diode, in which the first and second light emitting diodes are spaced apart from each other to expose the substrate, the first upper electrode has a protrusion electrically connected to the second semiconductor layer of the second light emitting diode and covering portions of the exposed substrate, the first light emitting diode, and the second light emitting diode, and the second upper electrode has a groove.Type: GrantFiled: April 24, 2020Date of Patent: October 5, 2021Assignee: Seoul Viosys Co., Ltd.Inventors: Jong Min Jang, Jong Hyeon Chae, Joon Sup Lee, Daewoong Suh, Hyun A Kim, Won Young Roh, Min Woo Kang
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Patent number: 10950755Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.Type: GrantFiled: September 17, 2020Date of Patent: March 16, 2021Assignee: SEOUL VIOSYS CO., LTD.Inventors: Jong Hyeon Chae, Joon Sup Lee, Daewoong Suh, Won Young Roh, Min Woo Kang, Jong Min Jang, Se Hee Oh, Hyun A Kim
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Publication number: 20210005785Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.Type: ApplicationFiled: September 17, 2020Publication date: January 7, 2021Inventors: Jong Hyeon CHAE, Joon Sup LEE, Daewoong SUH, Won Young ROH, Min Woo KANG, Jong Min JANG, Se Hee OH, Hyun A KIM
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Patent number: 10804316Abstract: A light emitting diode array is provide to include: a substrate; light emitting diodes positioned over the substrate, each including a first semiconductor layer, an active layer, and a second semiconductor layer, wherein each light emitting diode is disposed to form a first via hole structure exposing a portion of the corresponding first semiconductor layer; lower electrodes disposed over the second semiconductor layer; a first interlayer insulating layer disposed over the lower electrodes and configured to expose the portion of the first semiconductor layer of corresponding light emitting diodes; upper electrodes electrically connected to the first semiconductor layer through the first via hole structure, wherein the first via hole structure is disposed in parallel with one side of the corresponding second semiconductor layer and the first interlayer insulating layer is disposed to form a second via hole structure exposing a portion of the lower electrodes.Type: GrantFiled: December 7, 2017Date of Patent: October 13, 2020Assignee: SEOUL VIOSYS CO., LTD.Inventors: Jong Min Jang, Jong Hyeon Chae, Joon Sup Lee, Daewoong Suh, Hyun A. Kim, Won Young Roh, Min Woo Kang
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Patent number: 10784406Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.Type: GrantFiled: February 5, 2020Date of Patent: September 22, 2020Assignee: SEOUL VIOSYS CO., LTD.Inventors: Jong Hyeon Chae, Joon Sup Lee, Daewoong Suh, Won Young Roh, Min Woo Kang, Jong Min Jang, Se Hee Oh, Hyun A Kim
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Patent number: 10756237Abstract: A light emitting diode including a first conductive type semiconductor layer, a mesa disposed on the first conductive type semiconductor layer, the mesa including an active layer and a second conductive type semiconductor layer, a reflective electrode disposed on the mesa and configured to be in ohmic-contact with the second conductive type semiconductor layer, a current spreading layer disposed on the mesa and the reflective electrode, the current spreading layer including a first portion configured to be in ohmic-contact with an upper surface of the first conductive type semiconductor layer, a first n-contact region spaced apart from a second n-contact region with the mesa disposed between the first and second n-contact regions, and an insulation layer including a first opening exposing the reflective electrode between the first and second n-contact regions. The first and second n-contact regions have a second opening that exposes the first conductive type semiconductor layer.Type: GrantFiled: September 16, 2019Date of Patent: August 25, 2020Assignee: Seoul Viosys Co., Ltd.Inventors: Jong Hyeon Chae, Jong Min Jang, Won Young Roh, Daewoong Suh, Dae Sung Cho, Joon Sup Lee, Kyu Ho Lee, Chi Hyun In
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Patent number: 10749080Abstract: A light emitting diode apparatus includes a substrate, a first conductive type semiconductor layer, a second conductive type semiconductor layer, a mesa, a lower insulating layer, a first pad and a second pad. The substrate has a first surface and a second surface opposite to the first surface. The first conductivity type semiconductor layer is disposed on the first surface of the substrate. The mesa is disposed on the first conductive semiconductor layer and has an active layer and the second conductive semiconductor layer. A peripheral edge of the first conductive semiconductor layer is exposed. The lower insulating layer covers the mesa and the first conductive semiconductor layer and has a plurality of first openings exposing the first conductive semiconductor layer along a peripheral edge of the substrate.Type: GrantFiled: October 22, 2019Date of Patent: August 18, 2020Assignee: Seoul Viosys Co., Ltd.Inventors: Jong Hyeon Chae, Joon Sup Lee, Won Young Roh, Min Woo Kang, Jong Min Jang, Hyun A Kim, Daewoong Suh
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Publication number: 20200258936Abstract: A light emitting device including a substrate, first and second light emitting diodes disposed thereon and including a first semiconductor layer, an active layer, and a second semiconductor layer, a first upper electrode electrically connected to the first semiconductor layer and insulated from the second semiconductor layer of the first light emitting diode, a second upper electrode electrically connected to the first semiconductor layer and insulated from the second semiconductor layer of the second light emitting diode, in which the first and second light emitting diodes are spaced apart from each other to expose the substrate, the first upper electrode has a protrusion electrically connected to the second semiconductor layer of the second light emitting diode and covering portions of the exposed substrate, the first light emitting diode, and the second light emitting diode, and the second upper electrode has a groove.Type: ApplicationFiled: April 24, 2020Publication date: August 13, 2020Inventors: Jong Min Jang, Jong Hyeon Chae, Joon Sup Lee, Daewoong Suh, Hyun A Kim, Won Young Roh, Min Woo Kang
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Patent number: 10693043Abstract: Disclosed are an LED and an LED module. The LED includes: a first conductivity type semiconductor layer; a mesa disposed over the first conductivity type semiconductor layer and including an active layer and a second conductivity type semiconductor layer; a first ohmic-contact structure in contact with the first conductivity type semiconductor layer; a second ohmic-contact structure in contact with the second conductivity type semiconductor layer; a lower insulating layer at least partially covering the mesa and the first conductivity type semiconductor layer and disposed to form a first opening part at least partially exposing the first ohmic-contact structure and a second opening part at least partially exposing the second ohmic-contact structure; and a current distributing layer connected to the first ohmic-contact structure at least partially exposed by the first opening part and disposed to form a third opening part at least partially exposing the second opening part.Type: GrantFiled: February 12, 2018Date of Patent: June 23, 2020Assignee: SEOUL VIOSYS CO., LTD.Inventors: Jong Hyeon Chae, Won Young Roh, Joon Sup Lee, Min Woo Kang, Jong Min Jang, Hyun A Kim, Seon Min Bae, Daewoong Suh
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Patent number: 10676375Abstract: The present invention relates to a portable water purification system by means of UV LEDs. Provided according to the present invention is a portable water purification system by means of UV LEDs comprising: a support member; a plurality of LEDs mounted on the surface of the support member; a solid filter provided with a through-path into which the support member is inserted; and a cover, attached to one end of the solid filter, for sealing the through-path of the solid filter.Type: GrantFiled: March 21, 2013Date of Patent: June 9, 2020Assignee: SEOUL VIOSYS CO., LTD.Inventors: Seong Min Lee, Chung Hoon Lee, Daewoong Suh, Young Hwan Son
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Publication number: 20200176636Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.Type: ApplicationFiled: February 5, 2020Publication date: June 4, 2020Inventors: Jong Hyeon CHAE, Joon Sup LEE, Daewoong SUH, Won Young ROH, Min Woo KANG, Jong Min JANG, Se Hee OH, Hyun A KIM
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Publication number: 20200098949Abstract: A light emitting diode apparatus includes a substrate, a first conductive type semiconductor layer, a second conductive type semiconductor layer, a mesa, a lower insulating layer, a first pad and a second pad. The substrate has a first surface and a second surface opposite to the first surface. The first conductivity type semiconductor layer is disposed on the first surface of the substrate. The mesa is disposed on the first conductive semiconductor layer and has an active layer and the second conductive semiconductor layer. A peripheral edge of the first conductive semiconductor layer is exposed. The lower insulating layer covers the mesa and the first conductive semiconductor layer and has a plurality of first openings exposing the first conductive semiconductor layer along a peripheral edge of the substrate.Type: ApplicationFiled: October 22, 2019Publication date: March 26, 2020Applicant: SEOUL VIOSYS CO., LTD.Inventors: Jong Hyeon CHAE, Joon Sup LEE, Won Young ROH, Min Woo KANG, Jong Min JANG, Hyun A KIM, Daewoong SUH
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Patent number: 10573785Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.Type: GrantFiled: December 11, 2017Date of Patent: February 25, 2020Assignee: SEOUL VIOSYS CO., LTD.Inventors: Jong Hyeon Chae, Joon Sup Lee, Daewoong Suh, Won Young Roh, Min Woo Kang, Jong Min Jang, Se Hee Oh, Hyun A Kim
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Publication number: 20200013928Abstract: A light emitting diode including a first conductive type semiconductor layer, a mesa disposed on the first conductive type semiconductor layer, the mesa including an active layer and a second conductive type semiconductor layer, a reflective electrode disposed on the mesa and configured to be in ohmic-contact with the second conductive type semiconductor layer, a current spreading layer disposed on the mesa and the reflective electrode, the current spreading layer including a first portion configured to be in ohmic-contact with an upper surface of the first conductive type semiconductor layer, a first n-contact region spaced apart from a second n-contact region with the mesa disposed between the first and second n-contact regions, and an insulation layer including a first opening exposing the reflective electrode between the first and second n-contact regions. The first and second n-contact regions have a second opening that exposes the first conductive type semiconductor layer.Type: ApplicationFiled: September 16, 2019Publication date: January 9, 2020Inventors: Jong Hyeon CHAE, Jong Min Jang, Won Young Roh, Daewoong Suh, Dae Sung Cho, Joon Sup Lee, Kyu Ho Lee, Chi Hyun In
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Patent number: 10497836Abstract: A light-emitting diode is provided to include: a transparent substrate having a first surface, a second surface, and a side surface; a first conductive semiconductor layer positioned on the first surface of the transparent substrate; a second conductive semiconductor layer positioned on the first conductive semiconductor layer; an active layer positioned between the first conductive semiconductor layer and the second conductive semiconductor layer; a first pad electrically connected to the first conductive semiconductor layer; and a second pad electrically connected to the second conductive semiconductor layer, wherein the transparent substrate is configured to discharge light generated by the active layer through the second surface of the transparent substrate, and the light-emitting diode has a beam angle of at least 140 degrees or more. Accordingly, a light-emitting diode suitable for a backlight unit or a surface lighting apparatus can be provided.Type: GrantFiled: March 27, 2017Date of Patent: December 3, 2019Assignee: SEOUL VIOSYS CO., LTD.Inventors: Jong Hyeon Chae, Joon Sup Lee, Won Young Roh, Min Woo Kang, Jong Min Jang, Hyun A. Kim, Daewoong Suh