Abstract: Disclosed is a blankmask for EUV lithography, including a reflective film, a capping film, an etch stop film, a phase shift film, and a hard mask film which are sequentially formed on a substrate. The phase shift film contains ruthenium (Ru), and the etch stop film contains chrome (Cr) and niobium (Nb). In the etch stop film, the content of niobium (Nb) ranges from 20 to 50 at %, and the content of chrome (Cr) ranges from 10 to 40 at %. The hard mask film contains tantalum (Ta) and oxygen (O). The content of tantalum (Ta) in the hard mask film is higher than or equal to 50 at %. With the blankmask, it is possible to implement a high resolution and NILS during wafer printing, and implement DtC.

Abstract: Disclosed is a blankmask for EUV lithography, including a reflective film, a capping film and a phase shift film which are sequentially formed on a substrate. The phase shift film includes a first layer containing niobium (Nb) and chrome (Cr), and a second layer containing tantalum (Ta) and silicon (Si). In the first layer, the content of niobium (Nb) ranges from 20 to 50 at %, and the content of chrome (Cr) content ranges from 10 to 40 at %. The blankmask can implement an excellent resolution and NILS, and implement a low DtC.

Abstract: A bimodal lithium transition metal oxide based powder mixture comprising a first and a second lithium transition metal oxide based powder. The first powder comprises a material A having a layered crystal structure comprising the elements Li, a transition metal based composition M and oxygen and has a particle size distribution with a span <1.0. The second powder has a monolithic morphology and a general formula Li1+bN?1-bO2, wherein ?0.03?b?0.10, and N?=NixM?yCozEd, wherein 0.30?x?0.92, 0.05?y?0.40, 0.05?z?0.40 and 0?d?0.10, with M? being one or both of Mn or Al, and E being a dopant different from M?. The first powder has an average particle size D50 between 10 and 40 ?m. The second powder has an average particle size D50 between 2 and 4 ?m. The weight ratio of the second powder in the bimodal mixture is between 20 and 60 wt %.

Abstract: A blankmask for EUV lithography includes a substrate, a reflective layer, a capping layer, and a phase shift layer. The phase shift layer is made of a material containing ruthenium (Ru) and chromium (Cr), and a total content of ruthenium (Ru) and chromium (Cr) is 50 to 100 at %. The phase shift layer may further contain boron (B) or nitrogen (N). The phase shift layer of the present invention has a high relative reflectance (relative reflectance with respect to a reflectance of the reflective layer under the phase shift layer) with respect to a tantalum (Ta)-based phase shift layer and has a phase shift amount of 170 to 230°. It is possible to obtain excellent resolution when finally manufacturing a pattern of 7 nm or less by using a photomask manufactured using such a blankmask.

Abstract: A display device comprises a display panel which comprises scan lines, sensing lines, pixels electrically connected to each of the scan lines, and photo sensors electrically to each of the scan lines and the sensing lines, a scan driver which outputs scan signals to the scan lines according to a scan control signal, a timing controller which outputs the scan control signal to the scan driver, and a readout circuit which receives light sensing signals of the photo sensors from the sensing lines. The timing controller sets a frame frequency of the scan control signal to a first frame frequency in a first mode in which the display panel displays an image. The timing controller sets the frame frequency of the scan control signal to a second frame frequency in a second mode in which the photo sensors sense a fingerprint.

Abstract: A blankmask for extreme ultraviolet lithography includes a substrate, a reflective layer formed on the substrate, and a phase shift layer formed on the reflective layer. The phase shift layer contains niobium (Nb), and is made of a material containing one of tantalum (Ta), chromium (Cr), and ruthenium (Ru). A phase shift layer containing Nb and Ta has a relative reflectance of 5 to 20%, a phase shift layer containing Nb and Cr has a relative reflectance of 9 to 15%, and a phase shift layer containing Nb and Ru has a relative reflectance of 20% or more. The phase shift layer has a phase shift amount of 170 to 230°, and has a surface roughness of 0.5 nmRMS or less. It is possible to obtain excellent resolution when finally manufacturing a pattern of 7 nm or less by using a photomask manufactured using such a blankmask.

Abstract: A bimodal lithium transition metal oxide based powder mixture comprises a first and a second lithium transition metal oxide based powder. The first powder comprises particles of a material A comprising the elements Li, a transition metal based composition M and oxygen. The first powder has a particle size distribution characterized by a (D90?D10)/D50<1.0. The second powder comprises a material B having single crystal particles, said particles having a general formula Li+bN??bO2, wherein ?0.03?b?0.10, and N?=NixM?yCozEd, wherein 0.30?x?0.92, 0.05?y?0.40, 0.05?z?0.40 and 0?d?0.10, wherein M? is one or both of Mn or Al, and E is a dopant different from M?. The first powder has an average particle size D50 between 10 and 40 ?m. The second powder has a D50 between 2 and 4 ?m. The weight ratio of the second powder in the mixture is between 15 and 60 wt %.

Abstract: Disclosed are a binder solution for an all-solid-state battery including a binder in the form of particles, and a method of manufacturing the same. The binder solution may include a rubber-based binder, a first solvent for dissolving the rubber-based binder, and a second solvent in which the rubber-based binder is insoluble and which is miscible with the first solvent.

Abstract: A solid electrolyte free-standing membrane for an all-solid-state battery may include: an amount of about 85% to 98.5% by weight of a sulfide-based solid electrolyte; and an amount of about 1.5% to 15% by weight of a fibrillated polymer.

Abstract: Proposed is a method of manufacturing an anode for a lithium secondary battery, including a pre-lithiation step.

Abstract: The present invention relates to a chitosan-titanium composite, a preparation method and use thereof, and more particularly, a chitosan-titanium composite capable of effectively adsorbing and desorbing 68Ge/68Ga by combining small molecular chitosan with titanium metal oxide to increase adsorption reactivity to 68Ge and 68Ga desorption reactivity, and a preparation method and use thereof.

Abstract: The present disclosure relates to a binder for an all-solid-state battery, a method for preparing the binder, an electrode for an all-solid-state battery including the binder, and an all-solid-state battery including the electrode. Particularly, the binder for an all-solid-state battery has a three-dimensional network structure formed by mixing a polymer having unsaturated carbon double bonds, sulfur donor, vulcanization accelerator, first activating agent and a second activating agent in an adequate amount, and then carrying out heat treatment to perform crosslinking through the covalent bonding of carbon in the polymer chains with sulfur. In this manner, it is possible to minimize damages upon the sulfide-based solid electrolyte.

Abstract: Proposed is an electrode for a lithium secondary battery including a fibrillated binder and a manufacturing method thereof.

Abstract: The present invention relates to a hybrid aseptic connection system and aseptic connection method for manufacturing an antibody pharmaceutical. In a hybrid system employing a medium storage tank made of a SS material and a bioreactor made of an SU disposable tube, to ensure a completely aseptic connection between the medium storage tank and the bioreactor, the completely aseptic connection between the medium storage tank and the bioreactor may be made by interconnection of the SU disposable tube through a welding process and the advantages of both the SS system and the SU system may be obtained at the same time. As a discharge line, an SU disposable tube and a steam trap tube are formed in a “Y” shape, the flowability in a medium transfer line may be improved and thus it is possible to prevent impurities such as a condensate from remaining in the medium transfer line.

Abstract: The present invention relates to a bacteriostatic filter system for an antibody drug production process, and to a method of operating same, in which devices are configured and the system is designed so as to enable, through a control unit, the in-lining of a bacteriostatic filter cartridge and in-situ integrity testing of a bacteriostatic filter, wherein according to a result value of the integrity testing, media or buffer are transferred to a storage tank from a preparation tank, or the media or buffer transferred to the storage tank are transferred back to the preparation tank. Accordingly, the present invention can reduce the time required for filter cartridge replacement and integrity testing and implement a system having automated the transferring and backfeeding of media and buffers as well as processing liquids, and can thus reduce the amount of labor needed and shorten the processing time.

Abstract: The present disclosure relates to a binder solution for all-solid-state batteries. The binder solution includes a polymer binder, a first solvent, and an ion-conductive additive, wherein the ion-conductive additive includes lithium salt and a second solvent, which is different from the first solvent.

Abstract: The present invention provides a buffer preparation and transfer system for a process of manufacturing an antibody pharmaceutical which can reduce the input of a lot of labor due to the preparation of each buffer, including the weighing of a buffer chemical, the input of a powder, stirring and transfer, and significantly shorten process time by positioning and designing components in a manner that automates the preparation and transfer of various buffer solutions using a control unit and controls the concentration and composition of a buffer by transferring a concentrated component solution into the buffer storage tank using an opening/closing valve and a flow rate-adjusting valve, and unlike the related art, reduces the number of buffer preparation tanks corresponding to individual buffer storage tanks, which is advantageous for securing a safe distance between processes and securing a facility area.

Abstract: The present invention relates to a hybrid system of a culture and purification process for manufacturing antibody pharmaceuticals, in which one or more devices selected from bioreactor, chromatography, and filtration equipment are provided with one or more materials selected from among SU disposable bags and stainless steel (SS), and one or more devices selected from preparation and storage tanks of a medium and a buffer are provided with SS material, thereby simultaneously obtaining the advantages of a SS process system and a SU process system, and preventing cross-contamination through independent operation of a culture unit and a purification unit, and a process system is designed and positioned such that an effluent stream exiting individual culture units is introduced into one or more purification units using a control unit, thereby avoiding a bottleneck phenomenon from occurring in the purification process.

Abstract: A method of manufacturing an electrode for an all-solid-state battery is performed in a dry manner using first and second rollers. An electrode for an all-solid-state battery having an electrode layer with a desired thickness and a desired density of a mixture material may be manufactured by adjusting conditions of the first and the second rollers. The manufacturing speed may be accelerated, because there is no drying process, so that the efficiency of the manufacturing is improved. The process of thickening an electrode is realized by using the method and the porosity of the electrode for an all-solid-state battery manufactured thereby is excellent.

Abstract: A method of peeling off the protective film includes: providing a panel lower sheet, where a protective film is provided on one surface of the plane lower sheet and the protective film has a bending line extending in a first direction parallel to opposing sides thereof; gripping a portion of the protective film; moving the gripped portion of the protective film in a second direction which is a thickness direction thereof; and moving the panel lower sheet in a third direction perpendicular to the bending line.