Patents by Inventor Dae Yeong Joh

Dae Yeong Joh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming a low barrier height oxide layer on a silicon substrate
    Patent number: 6017786
    Abstract: This invention relates to a method for forming a low barrier height oxide layer on the surface of a crystalline silicon substrate, comprising: (A) forming spaced field oxide regions on the surface of said crystalline silicon substrate, the space between said field oxide regions comprising a tunnel region; (B) vapor depositing a layer of amorphous silicon on the surface of said field oxide regions and on the surface of said substrate in said tunnel region, the thickness of said layer of amorphous silicon being in the range of about 50 .ANG. to about 100 .ANG.; and (C) oxidizing said layer of amorphous silicon. The oxidized amorphous silicon layer in said tunnel region is a tunnel oxide layer and, in one embodiment, the inventive method includes the step of (D) forming a floating gate over said tunnel oxide layer, said tunnel oxide layer having a barrier height of about 1.6 to about 2.0 eV.
    Type: Grant
    Filed: December 17, 1997
    Date of Patent: January 25, 2000
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Yuesong He, John Jianshi Wang, Dae Yeong Joh