Abstract: Disclosed is a semiconductor packaging. The semiconductor packing comprises a substrate on which a semiconductor device is arranged on a front surface; a channel member disposed on a rear surface of the substrate and forming a cooling flow path through which a refrigerant moves; and a porous diamond layer covering an outer surface of the channel member.

Abstract: The present disclosure relates to a rapid thermal processing apparatus for rapid heat treatment of a substrate, and particularly, to increasing the accuracy in measuring the temperature of a substrate to be thermally processed by configuring a thermocouple for measuring the temperature of the substrate under the same conditions as the substrate to be thermally processed so as to be attached to and detached from the chamber, and the present disclosure provides a rapid thermal processing apparatus having a thermocouple installed to measure a temperature of a substrate to be thermally processed located inside a chamber, and the rapid thermal processing apparatus includes a mounting hole formed in the chamber, and a thermocouple kit inserted into and mounted to the mounting hole so that a bonding portion of a thermocouple wire is located at a thermocouple substrate extending into the chamber.

Abstract: The present disclosure relates to a rapid thermal processing apparatus for rapid heat treatment of a substrate, and particularly, to increasing the accuracy in measuring the temperature of a substrate to be thermally processed by configuring a thermocouple for measuring the temperature of the substrate under the same conditions as the substrate to be thermally processed so as to be attached to and detached from the chamber, and the present disclosure provides a rapid thermal processing apparatus having a thermocouple installed to measure a temperature of a substrate to be thermally processed located inside a chamber, and the rapid thermal processing apparatus includes a mounting hole formed in the chamber, and a thermocouple kit inserted into and mounted to the mounting hole so that a bonding portion of a thermocouple wire is located at a thermocouple substrate extending into the chamber.

Abstract: A rapid heat treatment apparatus comprises: a chamber for rapid heat treatment; a support stage radiating light to rapidly heat a substrate for rapid heat treatment; a substrate for temperature measurement which is made of a same material as the substrate for rapid heat treatment; a thermocouple for temperature measurement measuring a temperature of the substrate for temperature measurement; a support part formed of a light-transmitting material that supports the substrate for temperature measurement; and a light-transmitting plate disposed between the support part and the heat source device to isolate the opposite internals spaces of the chamber from each other, wherein the temperature of the substrate for temperature measurement, which is measured by the thermocouple, is considered to be the temperature of the substrate subjected to rapid heat treatment.

Abstract: A rapid heat treatment apparatus comprises: a chamber for rapid heat treatment; a support stage radiating light to rapidly heat a substrate for rapid heat treatment; a substrate for temperature measurement which is made of a same material as the substrate for rapid heat treatment; a thermocouple for temperature measurement measuring a temperature of the substrate for temperature measurement; a support part formed of a light-transmitting material that supports the substrate for temperature measurement; and a light-transmitting plate disposed between the support part and the heat source device to isolate the opposite internals spaces of the chamber from each other, wherein the temperature of the substrate for temperature measurement, which is measured by the thermocouple, is considered to be the temperature of the substrate subjected to rapid heat treatment.