Abstract: According to an example, to generate an aerosol, microwaves of a preset frequency are generated by using an oscillator the generated microwaves supplied to a resonator formed by a cavity between an outer conductor and a central conductor via a microwave coupler, the microwaves are resonated through the resonator to generated an amplified electromagnetic field, and an aerosol-generating substrate inserted such that the electromagnetic field is adjacent to the central conductor is heated to generate an aerosol.

Abstract: A resonator circuit device. This device can include a piezoelectric layer having a front-side electrode and a back-side electrode spatially configured on opposite sides of the piezoelectric layer. Each electrode has a connection region and a resonator region. Each electrode also includes a partial mass-loaded structure configured within a vicinity of its connection region. The front-side electrode and the back-side electrode are spatially configured in an anti-symmetrical manner with the resonator regions of both electrodes at least partially overlapping and the first and second connection regions on opposing sides. This configuration provides a symmetric acoustic impedance profile for improved Q factor and can reduce the issues of misalignment or unbalanced boundary conditions associated with conventional single mass-loaded perimeter configurations.

Abstract: A digital twin federation system for interoperability and federation between digital twins and an operating method thereof are provided. The digital twin federation system includes single digital twins to be federated, a metadata repository that stores metadata on the single digital twins and a federated digital twin, a federated digital twin generated by federating the single digital twins, and a management device that searches for a single digital twin providing a specific service among the single digital twins from the metadata repository through a search function to determine the single digital twin to be a digital twin for the federated digital twin, generates the federated digital twin where the single digital twins are federated, and generates a tool for providing a service of the federated digital twin, thereby expanding existing services and provide new services by federating digital twins, and easily solving problems involving domains through simulation and visualization.

Abstract: An RF filter system includes a plurality of bulk acoustic wave resonators arranged in a circuit having serial and parallel shunt configurations of resonators. Each resonator having a reflector, a support member including a surface, a first electrode including tungsten, overlying the reflector, a piezoelectric film including crystalline aluminum scandium nitride overlapping the first electrode, a second electrode including tungsten overlapping the piezoelectric film and the first electrode, and a passivation layer including silicon nitride overlying the second electrode. Portions of the support member surface of at least one resonator define a cavity region having a portion of the first electrode of the at least one resonator is located within the cavity region. The pass band circuit response has a bandwidth corresponding to a thickness of at least one of the first electrode, piezoelectric film, second electrode, and passivation layer. The system can include single crystal or polycrystalline BAW resonators.

Abstract: A firmware upgrade apparatus and method are disclosed. A firmware upgrade apparatus according to some embodiments of the present invention includes access points, a relay configured to upload firmware data to the access point, a node configured to upload the firmware data to the relay, and an over-the-air (OTA) access point configured to upload the firmware data to the node.

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

Abstract: A resonator circuit device. The present invention provides for improved resonator shapes using egg-shaped, partial egg-shaped, and asymmetrical partial egg-shaped resonator structures. These resonator shapes are configured to give less spurious mode/noise below the resonant frequency (Fs) than rectangular, circular, and elliptical resonator shapes. These improved resonator shapes also provide filter layout flexibility, which allows for more compact resonator devices compared to resonator devices using conventionally shaped resonators.

Abstract: A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. A first patterned electrode is deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the first electrode and a planarized support layer is deposited over the sacrificial layer, which is then bonded to a substrate wafer. The crystalline substrate is removed and a second patterned electrode is deposited over a second surface of the film. The sacrificial layer is etched to release the air reflection cavity. Also, a cavity can instead be etched into the support layer prior to bonding with the substrate wafer. Alternatively, a reflector structure can be deposited on the first electrode, replacing the cavity.

Abstract: The present invention relates to a method for user grouping in a metaverse-based office environment and, more particularly, to a method for user grouping in a metaverse-based office environment, the method comprising: a target user identification step of identifying a camera viewpoint of a local user in a virtual space, and identifying target users included in a virtual image of the camera viewpoint; and a user grouping step of grouping target users satisfying a configured grouping condition from among the target users, on the basis of avatar positions and gaze directions of the local user.

Abstract: The present invention relates to a method for user image data matching in a metaverse-based office environment and, more particularly, to a method for user image data matching in a metaverse-based office environment, the method comprising: a chat group identification step of identifying a camera viewpoint of a target user in a virtual space, and identifying whether a chat group for users included in a virtual image of the camera viewpoint is included; and a user image matching step of matching user images to avatars of respective group users included in the chat group, the user images being obtained by image-capturing the group users in real time.

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

Abstract: To generate an aerosol, a microwave of a preset frequency may be generated using a generator, the generated microwave may be supplied to a resonator formed based on a waveguide through a microwave coupler, an electromagnetic field may be generated by resonating the microwave using the resonator, and an aerosol may be generated when the electromagnetic field heats an aerosol-generating substrate inserted into the waveguide.

Abstract: A BAW resonator ladder topology pass-band filter can include a plurality of series branches each including BAW series resonators. A plurality of shunt branches can each include BAW shunt resonators, wherein the plurality of series branches are coupled to the plurality of shunt branches to provide the BAW resonator ladder topology pass-band filter. A high-impedance shunt branch can include a plurality of high-impedance BAW shunt resonators coupled together in-series to provide an impedance for the high-impedance shunt branch that is greater the other shunt branches in the BAW resonator ladder topology pass-band filter.

Abstract: The present invention relates to a phase shifter comprising: an operation unit connected to a plurality of phase transformation units to synchronize respective phases changed through the plurality of phase transformation units; a driving unit having a motor with a rotary shaft, a plurality of gears rotating interlinked with the rotary shaft, and a screw connected to any one of the plurality of gears to transmit power to the operation unit, the driving unit driving the operating unit through the motor, the plurality of gears, and the screw, wherein the screw is seated on a seating portion provided on an outer side of the motor, and pivotally rotates on the seating portion.

Abstract: The present invention relates to a phase conversion unit comprising: a first circuit board having a plurality of first circuit patterns; a plurality of second circuit boards each having a second circuit pattern, a partial area of which overlaps and is connected to one among the plurality of the first circuit patterns; a plurality of movement members for pressing the plurality of second circuit boards toward the first circuit board, moving the second circuit boards in a first direction to change the length by which the first circuit patterns and the second circuit pattern overlap each other, and thereby converting a phase through the changed length; and a housing disposed on the first circuit board and receiving the plurality of second circuit boards and the plurality of movement members.

Abstract: Provided is a phase transformation method performed by a phase shifter including a support frame, a plurality of phase transformation units on the support frame, an operation unit connected to the plurality of phase transformation units to synchronize phases, which are to be transformed through the plurality of phase transformation units, with each other, and a driving unit configured to operate the operation unit, wherein each of the plurality of phase transformation units includes a first circuit pattern, and a second circuit pattern connected to the first circuit pattern while a region of the second circuit pattern overlaps the first circuit pattern, and a length of the region of the second circuit pattern overlapping the first circuit pattern changes when the operation unit is operated.

Abstract: A method of forming a piezoelectric thin film includes sputtering a first surface of a substrate to provide a piezoelectric thin film comprising AlN, AlScN, AlCrN, HfMgAlN, or ZrMgAlN thereon, processing a second surface of the substrate that is opposite the first surface of the substrate to provide an exposed surface of the piezoelectric thin film from beneath the second surface of the substrate, wherein the exposed surface of the piezoelectric thin film includes a first crystalline quality portion, removing a portion of the exposed surface of the piezoelectric thin film to access a second crystalline quality portion that is covered by the first crystalline quality portion, wherein the second crystalline quality portion has a higher quality than the first crystalline quality portion and processing the second crystalline quality portion to provide an acoustic resonator device on the second crystalline quality portion.

Abstract: A BAW resonator ladder topology pass-band filter can include a plurality of series branches each including BAW series resonators. A plurality of shunt branches can each include BAW shunt resonators, wherein the plurality of series branches are coupled to the plurality of shunt branches to provide the BAW resonator ladder topology pass-band filter. A high-impedance shunt branch can include a plurality of high-impedance BAW shunt resonators coupled together in-series to provide an impedance for the high-impedance shunt branch that is greater the other shunt branches in the BAW resonator ladder topology pass-band filter.

Abstract: A method of operating a memory system, which includes a memory controller and at least one non-volatile memory, includes storing, in the memory system, temperature-dependent performance level information received from a host disposed external to the memory system, setting an operation performance level of the memory system to a first performance level, operating the memory controller and the at least one non-volatile memory device according to the first performance level, detecting an internal temperature of the memory system, and changing the operation performance level of the memory system to a second performance level that is different from the first performance level. The operation performance level is changed by the memory controller of the memory system, and changing the operation performance level is based on the temperature-dependent performance level information and the detected internal temperature.

Abstract: A method of operating a memory system, which includes a memory controller and at least one non-volatile memory, includes storing, in the memory system, temperature-dependent performance level information received from a host disposed external to the memory system, setting an operation performance level of the memory system to a first performance level, operating the memory controller and the at least one non-volatile memory device according to the first performance level, detecting an internal temperature of the memory system, and changing the operation performance level of the memory system to a second performance level that is different from the first performance level. The operation performance level is changed by the memory controller of the memory system, and changing the operation performance level is based on the temperature-dependent performance level information and the detected internal temperature.