Abstract: The present invention relates to a dielectric ceramic composition, method for preparing the same, and electronic device using the same. According to the present invention, there is provided a dielectric ceramic composition which allows use of a nickel internal electrode, sintering under a reducing atmosphere, and having 1000 or higher dielectric constant while providing excellent dc-bias properties and reliability which is close to paraelectric property. The composition of the present invention can generate high effective capacity under high DC voltage, have strong resistance against electrostatic discharge (ESD) damage, and be used for preparing an electronic device having low acoustic noise.

Abstract: The present invention relates to a dielectric ceramic composition, method for preparing the same, and electronic device using the same. According to the present invention, there is provided a dielectric ceramic composition which allows use of a nickel internal electrode, sintering under a reducing atmosphere, and having 1000 or higher dielectric constant while providing excellent dc-bias properties and reliability which is close to paraelectric property. The composition of the present invention can generate high effective capacity under high DC voltage, have strong resistance against electrostatic discharge (ESD) damage, and be used for preparing an electronic device having low acoustic noise.

Abstract: A nitride semiconductor device includes a dislocation control layer on a substrate, and a nitride semiconductor layer on the dislocation control layer. The dislocation control layer includes a nanocomposite of a first nanoparticle made of a first material and at least one second nanoparticle made of a second material.

Abstract: A nitride semiconductor device may include a substrate, a dislocation control layer formed on the substrate and including a plurality of hollow structures including a nitride, and a nitride semiconductor layer formed on the dislocation control layer.

Abstract: A nitride semiconductor device may include a substrate, a dislocation control layer formed on the substrate and including a plurality of hollow structures including a nitride, and a nitride semiconductor layer formed on the dislocation control layer.

Abstract: A semiconductor device includes a logic region disposed in a central region of the semiconductor device, and a peripheral region disposed in an outer region thereof. The logic region includes a line-shaped logic transistor and a box-shaped decoupling capacitor. The peripheral region includes a line-shaped peripheral transistor and a line-shaped peripheral dummy transistor disposed adjacent to the peripheral transistor.

Abstract: A nitride semiconductor device includes a dislocation control layer on a substrate, and a nitride semiconductor layer on the dislocation control layer. The dislocation control layer includes a nanocomposite of a first nanoparticle made of a first material and at least one second nanoparticle made of a second material.

Abstract: A semiconductor device includes a logic region disposed in a central region of the semiconductor device, and a peripheral region disposed in an outer region thereof. The logic region includes a line-shaped logic transistor and a box-shaped decoupling capacitor. The peripheral region includes a line-shaped peripheral transistor and a line-shaped peripheral dummy transistor disposed adjacent to the peripheral transistor.

Abstract: An electrode including metal oxides and a plurality of 12CaO.7Al2O3 particles, a method of preparing the electrode, an electronic device including the electrode, and, in particular, an organic light emitting device including the electrode. The electrode has low resistance, high optical transmittance, and a low work function.

Abstract: An optical image shutter having a transparent electro-optical crystal formed on a transparent amorphous substrate and a method of manufacturing the optical image shutter. The light image shutter is created by forming a buffer layer using a material having a similar crystalline structure to an electro-optical crystal, on a transparent amorphous substrate such as glass, and forming an electro-optical thin film layer such as the electro-optical crystal on the buffer layer.

Abstract: An optical image shutter having a transparent electro-optical crystal formed on a transparent amorphous substrate and a method of manufacturing the optical image shutter. The light image shutter is created by forming a buffer layer using a material having a similar crystalline structure to an electro-optical crystal, on a transparent amorphous substrate such as glass, and forming an electro-optical thin film layer such as the electro-optical crystal on the buffer layer.

Abstract: A method of manufacturing a nitride semiconductor substrate according to example embodiments may include forming a buffer layer on a (100) plane of a silicon (Si) substrate. The buffer layer may have a hexagonal crystal system and a (1010) plane. A nitride semiconductor layer may be epitaxially grown on the buffer layer. The nitride semiconductor layer may have a (1010) plane. Accordingly, because example embodiments enable the use of a relatively inexpensive Si substrate, a more economical nitride semiconductor substrate having a relatively large diameter may be achieved.

Abstract: An electrode including metal oxides and a plurality of 12CaO.7Al2O3 particles, a method of preparing the electrode, an electronic device including the electrode, and, in particular, an organic light emitting device including the electrode. The electrode has low resistance, high optical transmittance, and a low work function.

Abstract: Disclosed is a method for preparing an oxide nano phosphor. A metal precursor solution is prepared. The metal precursor solution is impregnated into a porous polymer material. A heat treatment is performed on the porous polymer material having the metal precursor solution impregnated therein. The heat treatment is performed by heating the porous polymer material having the metal precursor impregnated therein up to a temperature of higher than 500° C. solution at a temperature elevating rate of higher than 100° C. per minute.

Abstract: A method of manufacturing a nitride semiconductor substrate according to example embodiments may include forming a buffer layer on a (100) plane of a silicon (Si) substrate. The buffer layer may have a hexagonal crystal system and a (1010) plane. A nitride semiconductor layer may be epitaxially grown on the buffer layer. The nitride semiconductor layer may have a (1010) plane. Accordingly, because example embodiments enable the use of a relatively inexpensive Si substrate, a more economical nitride semiconductor substrate having a relatively large diameter may be achieved.