Abstract: A coil component according to an aspect of the present disclosure includes a coil component having a body including a first surface and a second surface opposing each other in a first direction, and a third surface and a fourth surface connecting the first surface to the second surface and opposing each other in a second direction; a coil disposed in the body; an external electrode disposed on the body and connected to the coil; and a first heat dissipation portion disposed on the first surface, wherein the body includes a groove disposed in a region between the first heat dissipation portion and the external electrode.

Abstract: The present disclosure relates to a power control device for temperature control capable of phase control compensation according to power fluctuations, a thermal processing system having the same, and a temperature control method for the thermal processing system. The power control device for temperature control includes a power control unit configured to control an amount of power supplied to a heating source by controlling a phase of AC power supplied from a power source and a power measurement unit connected to the power source and configured to measure the AC power, wherein the power control unit controls the phase of the AC power by compensating a phase angle according to a difference between a reference power value and the measured value measured by the power measurement unit.

Abstract: A display apparatus includes a display, a single physical button and a processor configured to control the display to display a guide user interface (UI), a selection UI and a plurality of menu items, based on a user input received via the single physical button being identified as a short click input, move the selection UI from one menu item among the plurality of menu items to another menu item among the plurality of menu items, based on the user input being identified as a long press input, select the one menu item and execute a control function corresponding to the selected one menu item, and based on an execution of the control function, control the display to display a setting UI indicating a current setting value of the control function.

Abstract: A semiconductor memory device includes a substrate including an element separation film and an active region defined by the element separation film, a bit line structure on the substrate, a trench in the element separation film and the active region, the trench on at least one side of the bit line structure and including a first portion in the element separation film and a second portion in the active region, a bottom face of the first portion placed above a bottom face of the second portion, a single crystal storage contact filling the trench, and an information storage element electrically connected to the single crystal storage contact.

Abstract: The semiconductor device includes a substrate, a trench formed in the substrate, a gate insulation layer conformally formed on the inner surface of the trench, buried gate electrodes formed on the gate insulation layer and filling a portion of the trench, and a capping layer formed on the buried gate electrodes and filling the trench. The buried gate electrode include a first gate electrode and a second gate electrode surrounding a bottom portion of the first gate electrode, and an air gap is provided between a top portion of the first gate electrode and the gate insulation layer.

Abstract: The semiconductor device includes a substrate, a trench formed in the substrate, a gate insulation layer conformally formed on the inner surface of the trench, buried gate electrodes formed on the gate insulation layer and filling a portion of the trench, and a capping layer formed on the buried gate electrodes and filling the trench. The buried gate electrode include a first gate electrode and a second gate electrode surrounding a bottom portion of the first gate electrode, and an air gap is provided between a top portion of the first gate electrode and the gate insulation layer.