Abstract: A semiconductor memory device includes a substrate including an element separation film and an active region defined by the element separation film, a bit line structure on the substrate, a trench in the element separation film and the active region, the trench on at least one side of the bit line structure and including a first portion in the element separation film and a second portion in the active region, a bottom face of the first portion placed above a bottom face of the second portion, a single crystal storage contact filling the trench, and an information storage element electrically connected to the single crystal storage contact.

Abstract: Disclosed herein are an apparatus and method for updating an Internet-based malware detection engine using virtual machine scaling. The method may include creating a scaling group and an update group set based on a first virtual machine image, creating a second virtual machine image for a running virtual machine in response to occurrence of a snapshot event in the virtual update group run based on the first virtual machine image, modifying the scale-out image of the scaling group to the second virtual machine image, updating the scaling group by triggering a scale-out event and a scale-in event in the scaling group in response to occurrence of an update event, and modifying the scale-in image of the scaling group to the second virtual machine image.

Abstract: The semiconductor device includes a substrate, a trench formed in the substrate, a gate insulation layer conformally formed on the inner surface of the trench, buried gate electrodes formed on the gate insulation layer and filling a portion of the trench, and a capping layer formed on the buried gate electrodes and filling the trench. The buried gate electrode include a first gate electrode and a second gate electrode surrounding a bottom portion of the first gate electrode, and an air gap is provided between a top portion of the first gate electrode and the gate insulation layer.

Abstract: The semiconductor device includes a substrate, a trench formed in the substrate, a gate insulation layer conformally formed on the inner surface of the trench, buried gate electrodes formed on the gate insulation layer and filling a portion of the trench, and a capping layer formed on the buried gate electrodes and filling the trench. The buried gate electrode include a first gate electrode and a second gate electrode surrounding a bottom portion of the first gate electrode, and an air gap is provided between a top portion of the first gate electrode and the gate insulation layer.