Patents by Inventor Dae-Hyun MOON

Dae-Hyun MOON has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250053291
    Abstract: A display apparatus includes a display, a single physical button and a processor configured to control the display to display a guide user interface (UI), a selection UI and a plurality of menu items, based on a user input received via the single physical button being identified as a short click input, move the selection UI from one menu item among the plurality of menu items to another menu item among the plurality of menu items, based on the user input being identified as a long press input, select the one menu item and execute a control function corresponding to the selected one menu item, and based on an execution of the control function, control the display to display a setting UI indicating a current setting value of the control function.
    Type: Application
    Filed: October 31, 2024
    Publication date: February 13, 2025
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jong-hyuk KIM, Seung-hyun MOON, Dae-hyun JANG
  • Patent number: 12219753
    Abstract: A semiconductor memory device includes a substrate including an element separation film and an active region defined by the element separation film, a bit line structure on the substrate, a trench in the element separation film and the active region, the trench on at least one side of the bit line structure and including a first portion in the element separation film and a second portion in the active region, a bottom face of the first portion placed above a bottom face of the second portion, a single crystal storage contact filling the trench, and an information storage element electrically connected to the single crystal storage contact.
    Type: Grant
    Filed: December 13, 2023
    Date of Patent: February 4, 2025
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jin Won Ma, Ja Min Koo, Dae Young Moon, Kyu Wan Kim, Bong Hyun Kim, Young Seok Kim
  • Patent number: 9224619
    Abstract: The semiconductor device includes a substrate, a trench formed in the substrate, a gate insulation layer conformally formed on the inner surface of the trench, buried gate electrodes formed on the gate insulation layer and filling a portion of the trench, and a capping layer formed on the buried gate electrodes and filling the trench. The buried gate electrode include a first gate electrode and a second gate electrode surrounding a bottom portion of the first gate electrode, and an air gap is provided between a top portion of the first gate electrode and the gate insulation layer.
    Type: Grant
    Filed: September 30, 2014
    Date of Patent: December 29, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seol-Min Yi, Dae-Hyun Moon, Joon-Seok Moon, Se-Keun Park, Hyeoung-Won Seo
  • Publication number: 20150221742
    Abstract: The semiconductor device includes a substrate, a trench formed in the substrate, a gate insulation layer conformally formed on the inner surface of the trench, buried gate electrodes formed on the gate insulation layer and filling a portion of the trench, and a capping layer formed on the buried gate electrodes and filling the trench. The buried gate electrode include a first gate electrode and a second gate electrode surrounding a bottom portion of the first gate electrode, and an air gap is provided between a top portion of the first gate electrode and the gate insulation layer.
    Type: Application
    Filed: September 30, 2014
    Publication date: August 6, 2015
    Inventors: Seol-Min YI, Dae-Hyun MOON, Joon-Seok MOON, Se-Keun PARK, Hyeoung-Won SEO