Patents by Inventor Daemian Raj
Daemian Raj has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220102179Abstract: Exemplary semiconductor processing systems may include a processing chamber and an electrostatic chuck disposed at least partially within the processing chamber. The electrostatic chuck may include at least one electrode and a heater. A semiconductor processing system may include a power supply to provide a signal to the electrode to provide electrostatic force to secure a substrate to the electrostatic chuck. The system may also include a filter communicatively coupled between the power supply and the electrode. The filter is configured to remove or reduce noise introduced into the chucking signal by operating the heater while the electrostatic force on the substrate is maintained. The filter may include active circuitry, passive circuitry, or both, and may include an adjustment circuit to set the gain of the filter so that an output signal level from the filter corresponds to an input signal level for the filter.Type: ApplicationFiled: September 29, 2020Publication date: March 31, 2022Applicant: Applied Materials, Inc.Inventors: Zheng John Ye, Daemian Raj Benjamin Raj, Rana Howlader, Abhigyan Keshri, Sanjay G. Kamath, Dmitry A. Dzilno, Juan Carlos Rocha-Alvarez, Shailendra Srivastava, Kristopher R. Enslow, Xinhai Han, Deenesh Padhi, Edward P. Hammond
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Publication number: 20220020570Abstract: Exemplary semiconductor processing systems may include a processing chamber including a lid stack having an output manifold. The systems may include a gas panel. The systems may include an input manifold. The input manifold may fluidly couple the gas panel with the output manifold of the processing chamber. A delivery line may extend from the input manifold to the output manifold. The systems may include a first transmission line extending from a first set of precursor sources of the gas panel to the delivery line. The systems may include a second transmission line extending from a second set of precursor sources of the gas panel to the delivery line. The second transmission line may be switchably coupled between the delivery line and an exhaust of the semiconductor processing system.Type: ApplicationFiled: July 19, 2020Publication date: January 20, 2022Applicant: Applied Materials, Inc.Inventors: Sai Susmita Addepalli, Yue Chen, Abhigyan Keshri, Qiang Ma, Zhijun Jiang, Shailendra Srivastava, Daemian Raj Benjamin Raj, Ganesh Balasubramanian
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Patent number: 11145504Abstract: A method of forming a film stack with reduced defects is provided and includes positioning a substrate on a substrate support within a processing chamber and sequentially depositing polysilicon layers and silicon oxide layers to produce the film stack on the substrate. The method also includes supplying a current of greater than 5 ampere (A) to a plasma profile modulator while generating a deposition plasma within the processing chamber, exposing the substrate to the deposition plasma while depositing the polysilicon layers and the silicon oxide layers, and maintaining the processing chamber at a pressure of greater than 2 Torr to about 100 Torr while depositing the polysilicon layers and the silicon oxide layers.Type: GrantFiled: October 9, 2019Date of Patent: October 12, 2021Assignee: Applied Materials, Inc.Inventors: Zhijun Jiang, Ganesh Balasubramanian, Arkajit Roy Barman, Hidehiro Kojiri, Xinhai Han, Deenesh Padhi, Chuan Ying Wang, Yue Chen, Daemian Raj Benjamin Raj, Nikhil Sudhindrarao Jorapur, Vu Ngoc Tran Nguyen, Miguel S. Fung, Jose Angelo Olave, Thian Choi Lim
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Publication number: 20210159053Abstract: Exemplary semiconductor processing chambers may include a gasbox characterized by a first surface and a second surface opposite the first surface. The gasbox may define a central aperture. The gasbox may define an annular channel extending about the central aperture. The annular channel may be fluidly accessible from the first surface of the gasbox. The gasbox may further define a plurality of outlet apertures extending from the annular channel through the second surface of the gasbox.Type: ApplicationFiled: November 27, 2019Publication date: May 27, 2021Applicant: Applied Materials, Inc.Inventors: Mingle Tong, Li-Qun Xia, Daemian Raj Benjamin Raj
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Patent number: 10934620Abstract: Implementations described herein generally relate to an apparatus for forming flowable films. In one implementation, the apparatus is a processing chamber including a first RPS coupled to a lid of the processing chamber and a second RPS coupled to a side wall of the processing chamber. The first RPS is utilized for delivering deposition radicals into a processing region in the processing chamber and the second RPS is utilized for delivering cleaning radicals into the processing region. The processing chamber further includes a radical delivery ring disposed between a showerhead and a substrate support for delivering cleaning radicals from the second RPS into the processing region. Having separate RPSs for deposition and clean along with introducing radicals from the RPSs into the processing region using separate delivery channels minimizes cross contamination and cyclic change on the RPSs, leading to improved deposition rate drifting and particle performance.Type: GrantFiled: November 27, 2017Date of Patent: March 2, 2021Assignee: Applied Materials, Inc.Inventors: Ying Ma, Daemian Raj, Jay D. Pinson, II, DongQing Li, Jingmei Liang, Yizhen Zhang
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Publication number: 20210059037Abstract: A method and apparatus for controlling RF plasma attributes is disclosed. Some embodiments of the disclosure provide RF sensors within processing chambers operable at high temperatures. Some embodiments provide methods of measuring RF plasma attributes using RF sensors within a processing chamber to provide feedback control for an RF generator.Type: ApplicationFiled: August 19, 2020Publication date: February 25, 2021Applicant: Applied Materials, Inc.Inventors: Zheng John Ye, Daemian Raj Benjamin Raj, Shailendra Srivastava, Nikhil Sudhindrarao Jorapur, Ndanka O. Mukuti, Dmitry A. Dzilno, Juan Carlos Rocha
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Publication number: 20210047730Abstract: Exemplary semiconductor processing chambers may include a showerhead. The chambers may also include a substrate support characterized by a first surface facing the showerhead. The first surface may be configured to support a semiconductor substrate. The substrate support may define a recessed pocket centrally located within the first surface. The recessed pocket may be defined by an outer radial wall characterized by a height from the first surface within the recessed pocket that is greater than or about 150% of a thickness of the semiconductor substrate.Type: ApplicationFiled: August 6, 2020Publication date: February 18, 2021Applicant: Applied Materials, Inc.Inventors: Sai Susmita Addepalli, Yue Chen, Zhijun Jiang, Shailendra Srivastava, Nikhil Sudhindrarao Jorapur, Daemian Raj Benjamin Raj, Greg Chichkanoff, Qiang Ma, Abhigyan Keshri, Xinhai Han, Ganesh Balasubramanian, Deenesh Padhi
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Publication number: 20210035843Abstract: Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The assemblies may include a support stem coupled with the electrostatic chuck body. The assemblies may include a heater embedded within the electrostatic chuck body. The assemblies may also include an electrode embedded within the electrostatic chuck body between the heater and the substrate support surface. The substrate support assemblies may be characterized by a leakage current through the electrostatic chuck body of less than or about 4 mA at a temperature of greater than or about 500° C. and a voltage of greater than or about 600 V.Type: ApplicationFiled: July 22, 2020Publication date: February 4, 2021Applicant: Applied Materials, Inc.Inventors: Jian Li, Juan C. Rocha, Zheng J. Ye, Daemian Raj Benjamin Raj, Shailendra Srivastava, Xinhai Han, Deenesh Padhi, Kesong Hu, Chuan-Ying Wang
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Publication number: 20210003340Abstract: The present disclosure relates to a fluid delivery apparatus for deposition chambers. The fluid delivery device includes a fluid flow meter. The fluid flow meter is enclosed in an insulated box. An intake is provided on the insulated box for providing a forced cooling gas flow over the fluid flow meter. An exhaust is provided on the insulated box from which the forced cooling gas exits the insulated box.Type: ApplicationFiled: March 14, 2019Publication date: January 7, 2021Inventors: Shailendra SRIVASTAVA, Seyed ALAM, Nikhil Sudhindrarao JORAPUR, Daemian Raj BENJAMIN RAJ, Juan Carlos ROCHA-ALVAREZ
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Publication number: 20200385862Abstract: A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.Type: ApplicationFiled: June 5, 2020Publication date: December 10, 2020Inventors: Shailendra SRIVASTAVA, Sai Susmita ADDEPALLI, Nikhil Sudhindrarao JORAPUR, Daemian Raj BENJAMIN RAJ, Amit Kumar BANSAL, Juan Carlos ROCHA-ALVAREZ, Gregory Eugene CHICHKANOFF, Xinhai HAN, Masaki OGATA, Kristopher ENSLOW, Wenjiao WANG
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Publication number: 20200365386Abstract: In one example, a process chamber comprises a lid assembly, a first gas supply, second gas supply, a chamber body, and a substrate support. The lid assembly comprises a gas box, a gas conduit passing through the gas box, a blocker plate, and a showerhead. The gas box comprises a gas distribution plenum, and a distribution plate comprising a plurality of holes aligned with the gas distribution plenum. The blocker plate is coupled to the gas box forming a first plenum. The showerhead is coupled to the blocker plate forming a second plenum. The first gas supply is coupled to the gas distribution plenum, and the second gas supply system is coupled to the gas conduit. The chamber body is coupled to the showerhead, and the substrate support assembly is disposed within an interior volume of the chamber body, and is configured to support a substrate during processing.Type: ApplicationFiled: April 9, 2020Publication date: November 19, 2020Inventors: Daemian Raj BENJAMIN RAJ, Gregory Eugene CHICHKANOFF, Shailendra SRIVASTAVA, Sai Susmita ADDEPALLI, Nikhil Sudhindrarao JORAPUR, Abhigyan KESHRI, Allison YAU
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Publication number: 20200227258Abstract: A method of forming a film stack with reduced defects is provided and includes positioning a substrate on a substrate support within a processing chamber and sequentially depositing polysilicon layers and silicon oxide layers to produce the film stack on the substrate. The method also includes supplying a current of greater than 5 ampere (A) to a plasma profile modulator while generating a deposition plasma within the processing chamber, exposing the substrate to the deposition plasma while depositing the polysilicon layers and the silicon oxide layers, and maintaining the processing chamber at a pressure of greater than 2 Torr to about 100 Torr while depositing the polysilicon layers and the silicon oxide layers.Type: ApplicationFiled: October 9, 2019Publication date: July 16, 2020Inventors: Zhijun JIANG, Ganesh BALASUBRAMANIAN, Arkajit ROY BARMAN, Hidehiro KOJIRI, Xinhai HAN, Deenesh PADHI, Chuan Ying WANG, Yue CHEN, Daemian Raj BENJAMIN RAJ, Nikhil Sudhindrarao JORAPUR, Vu Ngoc Tran NGUYEN, Miguel S. FUNG, Jose Angelo OLAVE, Thian Choi LIM
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Publication number: 20200173022Abstract: Embodiments of the disclosure describe an apparatus and a method for depositing a film layer that may have minimum contribution to overlay error after a sequence of deposition and lithographic exposure processes. In one example, a method includes positioning a substrate on a substrate support in a process chamber, and flowing a deposition gas mixture comprising a silicon containing gas and a reacting gas to the process chamber through a showerhead having a convex surface facing the substrate support or a concave surface facing the substrate support in accordance with a stress profile of the substrate. A plasma is formed in the presence of the deposition gas mixture in the process chamber by applying an RF power to multiple coupling points of the showerhead that are symmetrically arranged about a center point of the showerhead. A deposition process is then performed on the substrate.Type: ApplicationFiled: November 8, 2019Publication date: June 4, 2020Inventors: Xinhai HAN, Deenesh PADHI, Daemian Raj BENJAMIN RAJ, Kristopher ENSLOW, Wenjiao WANG, Masaki OGATA, Sai Susmita ADDEPALLI, Nikhil Sudhindrarao JORAPUR, Gregory Eugene CHICHKANOFF, Shailendra SRIVASTAVA, Jonghoon BAEK, Zakaria IBRAHIMI, Juan Carlos ROCHA-ALVAREZ, Tza-Jing GUNG
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Patent number: 10428426Abstract: A method and apparatus for a deposition chamber is provided and includes a twin chamber that includes a first remote plasma system coupled and dedicated to a first processing region, a second remote plasma system coupled and dedicated to a second processing region, and a third remote plasma system shared by the first processing region and the second processing region.Type: GrantFiled: April 21, 2017Date of Patent: October 1, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Daemian Raj, Ying Ma, DongQing Li, Jay D. Pinson, II
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Publication number: 20180258531Abstract: Implementations described herein generally relate to an apparatus for forming flowable films. In one implementation, the apparatus is a diffuser including a body having a first surface and a second surface opposing the first surface, a plurality of dome structures formed in the first surface, a central manifold formed in the second surface, and a plurality of tubular conduits coupled between the central manifold and a respective one of the plurality of dome structures, at least a portion of the plurality of tubular conduits being positioned diagonally relative to a plane of the first surface.Type: ApplicationFiled: February 9, 2018Publication date: September 13, 2018Inventors: Ying MA, Daemian RAJ, Greg CHICHKANOFF
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Publication number: 20180230597Abstract: Embodiments disclosed herein generally relate to a plasma processing system. The plasma processing system includes a processing chamber, a chamber seasoning system, and a remote plasma cleaning system. The processing chamber has a chamber body defining a processing region and a plasma field. The chamber seasoning system is coupled to the processing chamber. The chamber seasoning system is configured to season the processing region and the plasma field. The remote plasma cleaning system is in communication with the processing chamber. The remote plasma cleaning system is configured to clean the processing region and the plasma field.Type: ApplicationFiled: February 14, 2017Publication date: August 16, 2018Inventors: Ying MA, Daemian RAJ, Martin Jay SEAMONS, Ankit POKHREL, Greg CHICHKANOFF, Yizhen ZHANG, Jingmei LIANG, Jay D. PINSON, II, Dongqing LI, Juan Carlos ROCHA-ALVAREZ
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Publication number: 20180148840Abstract: Implementations described herein generally relate to an apparatus for forming flowable films. In one implementation, the apparatus is a processing chamber including a first RPS coupled to a lid of the processing chamber and a second RPS coupled to a side wall of the processing chamber. The first RPS is utilized for delivering deposition radicals into a processing region in the processing chamber and the second RPS is utilized for delivering cleaning radicals into the processing region. The processing chamber further includes a radical delivery ring disposed between a showerhead and a substrate support for delivering cleaning radicals from the second RPS into the processing region. Having separate RPSs for deposition and clean along with introducing radicals from the RPSs into the processing region using separate delivery channels minimizes cross contamination and cyclic change on the RPSs, leading to improved deposition rate drifting and particle performance.Type: ApplicationFiled: November 27, 2017Publication date: May 31, 2018Inventors: Ying MA, Daemian RAJ, Jay D. PINSON, II, DongQing LI, Jingmei LIANG, Yizhen ZHANG
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Publication number: 20170306493Abstract: A method and apparatus for a deposition chamber is provided and includes a twin chamber that includes a first remote plasma system coupled and dedicated to a first processing region, a second remote plasma system coupled and dedicated to a second processing region, and a third remote plasma system shared by the first processing region and the second processing region.Type: ApplicationFiled: April 21, 2017Publication date: October 26, 2017Inventors: Daemian RAJ, Ying MA, DongQing LI, Jay D. PINSON, II
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Patent number: 9506145Abstract: A cleaning method for a UV chamber involves providing a first cleaning gas, a second cleaning gas, and a purge gas to one or more openings in the chamber. The first cleaning gas may be an oxygen containing gas, such as ozone, to remove carbon residues. The second cleaning gas may be a remote plasma of NF3 and O2 to remove silicon residues. The UV chamber may have two UV transparent showerheads, which together with a UV window in the chamber lid, define a gas volume proximate the UV window and a distribution volume below the gas volume. A purge gas may be flowed through the gas volume while one or more of the cleaning gases is flowed into the distribution volume to prevent the cleaning gases from impinging on the UV transparent window.Type: GrantFiled: June 13, 2016Date of Patent: November 29, 2016Assignee: APPLIED MATERIALS, INC.Inventors: Sanjeev Baluja, Alexandros T. Demos, Kelvin Chan, Juan Carlos Rocha-Alvarez, Scott A. Hendrickson, Abhijit Kangude, Inna Turevsky, Mahendra Chhabra, Thomas Nowak, Daping Yao, Bo Xie, Daemian Raj
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Publication number: 20160296981Abstract: A cleaning method for a UV chamber involves providing a first cleaning gas, a second cleaning gas, and a purge gas to one or more openings in the chamber. The first cleaning gas may be an oxygen containing gas, such as ozone, to remove carbon residues. The second cleaning gas may be a remote plasma of NF3 and O2 to remove silicon residues. The UV chamber may have two UV transparent showerheads, which together with a UV window in the chamber lid, define a gas volume proximate the UV window and a distribution volume below the gas volume. A purge gas may be flowed through the gas volume while one or more of the cleaning gases is flowed into the distribution volume to prevent the cleaning gases from impinging on the UV transparent window.Type: ApplicationFiled: June 13, 2016Publication date: October 13, 2016Inventors: Sanjeev BALUJA, Alexandros T. DEMOS, Kelvin CHAN, Juan Carlos ROCHA-ALVAREZ, Scott A. HENDRICKSON, Abhijit KANGUDE, Inna TUREVSKY, Mahendra CHHABRA, Thomas NOWAK, Daping YAO, Bo XIE, Daemian RAJ