Abstract: A wafer processing apparatus includes a first tube extending in a vertical direction, a second tube arranged in the first tube and defining a reaction chamber, the reaction chamber being configured to receive a boat that holds a plurality of wafers, first and second gas nozzles in the second tube, the first and second gas nozzles being configured to supply first and second reaction gases, respectively, and being spaced apart from each other along a circumferential direction of the second tube to define a central angle of at about 50° to about 130° with respect to a center of the second tube, and an exhaust portion configured to exhaust residual gas from the reaction chamber, the exhaust portion including an exhaust slit in the second tube and an exhaust space between the first tube and the second tube.

Abstract: A method of manufacturing a contact portion is provided, which includes: forming a first signal line on a substrate (110), forming a insulating layer (140) covering the first signal line and having a contact hole (182, 185) exposing the first signal line; forming a contact layer (700) on the exposed surface of the first signal through the contact hole; and forming a second signal line (82, 190) connected to the first signal line via the contact layer. Wherein the first signal line is made of Al or Al alloy, and the second signal line is made of ITO or IZO.

Abstract: A method of producing a thin film transistor substrate to prevent an interconnection from being corroded during a dry etching process includes sequentially forming on an insulating substrate a gate interconnection, a gate insulating layer, an active layer, a conductive layer for a data interconnection, and a photoresist pattern including a first region and a second region, etching the conductive layer for the data interconnection using the photoresist pattern as an etching mask to form a conductive layer pattern for source/drain electrodes, etching the active layer using the photoresist pattern as the etching mask to form an active layer pattern, removing the second region of the photoresist pattern, dry etching the conductive layer pattern for the source/drain electrodes under the second region using the photoresist pattern as the etching mask and etching gas, etching a portion of the active layer pattern using the photoresist pattern as the etching mask, and physically removing the reaction byproduct using

Abstract: A method of manufacturing a contact portion is provided, which includes: forming a first signal line on a substrate (110), forming a insulating layer (140) covering the first signal line and having a contact hole (182, 185) exposing the first signal line; forming a contact layer (700) on the exposed surface of the first signal through the contact hole; and forming a second signal line (82, 190) connected to the first signal line via the contact layer. Wherein the first signal line is made of Al or Al alloy, and the second signal line is made of ITO or IZO.