Abstract: A method of manufacturing an integrated circuit device, includes forming a de-bonding layer on a carrier substrate, the de-bonding layer including a metallic oxide, forming a light absorbing layer on the de-bonding layer, forming a bonding layer on the light absorbing layer, and bonding an integrated circuit substrate structure to the bonding layer, and irradiating the carrier substrate with light to separate the de-bonding layer from the light absorbing layer. The de-bonding layer has a thermal expansion coefficient that is 10 times or greater than 10 times a thermal expansion coefficient of the light absorbing layer.

Abstract: A semiconductor manufacturing apparatus includes a chamber having an inner space, an optical window dividing the inner space into a processing space and a buffer space, a stage disposed in the processing space and that having a support surface configured to support a substrate, and a light source disposed in the buffer space and configured to irradiate the stage with light through the optical window, and the optical window has communication holes defined therein providing a fluid path between the processing space and the buffer space.