Patents by Inventor Dae-Sik Moon

Dae-Sik Moon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12626749
    Abstract: A memory device includes a clock receiver configured to receive, from a memory controller, a write clock that is used to receive write data during a data write operation, a duty monitor configured to generate first monitoring information by monitoring a duty of the write clock, and a duty adjuster configured to adjust the duty of the write clock in response to a duty control signal and output an adjusted write clock. The memory device provides the first monitoring information to the memory controller, and receives the duty control signal, generated using the first monitoring information, from the memory controller.
    Type: Grant
    Filed: August 28, 2024
    Date of Patent: May 12, 2026
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dae-Sik Moon, Gil-Hoon Cha, Ki-Seok Oh, Chang-Kyo Lee, Yeon-Kyu Choi, Jung-Hwan Choi, Kyung-Soo Ha, Seok-Hun Hyun
  • Publication number: 20240420754
    Abstract: A memory device includes a clock receiver configured to receive, from a memory controller, a write clock that is used to receive write data during a data write operation, a duty monitor configured to generate first monitoring information by monitoring a duty of the write clock, and a duty adjuster configured to adjust the duty of the write clock in response to a duty control signal and output an adjusted write clock. The memory device provides the first monitoring information to the memory controller, and receives the duty control signal, generated using the first monitoring information, from the memory controller.
    Type: Application
    Filed: August 28, 2024
    Publication date: December 19, 2024
    Inventors: DAE-SIK MOON, GIL-HOON CHA, KI-SEOK OH, CHANG-KYO LEE, YEON-KYU CHOI, JUNG-HWAN CHOI, KYUNG-SOO HA, SEOK-HUN HYUN
  • Patent number: 12106794
    Abstract: A memory device includes a clock receiver configured to receive, from a memory controller, a write clock that is used to receive write data during a data write operation, a duty monitor configured to generate first monitoring information by monitoring a duty of the write clock, and a duty adjuster configured to adjust the duty of the write clock in response to a duty control signal and output an adjusted write clock. The memory device provides the first monitoring information to the memory controller, and receives the duty control signal, generated using the first monitoring information, from the memory controller.
    Type: Grant
    Filed: June 7, 2023
    Date of Patent: October 1, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD
    Inventors: Dae-Sik Moon, Gil-Hoon Cha, Ki-Seok Oh, Chang-Kyo Lee, Yeon-Kyu Choi, Jung-Hwan Choi, Kyung-Soo Ha, Seok-Hun Hyun
  • Patent number: 12033686
    Abstract: A memory device includes a clock receiver configured to receive, from a memory controller, a write clock that is used to receive write data during a data write operation, a duty monitor configured to generate first monitoring information by monitoring a duty of the write clock, and a duty adjuster configured to adjust the duty of the write clock in response to a duty control signal and output an adjusted write clock. The memory device provides the first monitoring information to the memory controller, and receives the duty control signal, generated using the first monitoring information, from the memory controller.
    Type: Grant
    Filed: May 9, 2023
    Date of Patent: July 9, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dae-Sik Moon, Gil-Hoon Cha, Ki-Seok Oh, Chang-Kyo Lee, Yeon-Kyu Choi, Jung-Hwan Choi, Kyung-Soo Ha, Seok-Hun Hyun
  • Patent number: 12020767
    Abstract: A method of operating memory devices disposed in different ranks of a multi-rank memory device and sharing a signal line includes receiving, in all of the memory devices included in the multi-rank memory device, on-die termination (ODT) state information of the signal line. The method further includes storing, in each of the memory devices of the multi-rank memory device, the ODT state information of the signal line in a mode register. The method further includes generating, in each of the memory devices of the multi-rank memory device, a control signal based on the ODT state information of the signal line stored in the mode register. The method further includes changing, in each of the memory devices of the multi-rank memory device, an ODT setting of the signal line in response to the control signal.
    Type: Grant
    Filed: December 1, 2021
    Date of Patent: June 25, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dae-Sik Moon, Kyung-Soo Ha, Young-Soo Sohn, Ki-Seok Oh, Chang-Kyo Lee, Jin-Hoon Jang, Yeon-Kyu Choi, Seok-Hun Hyun
  • Publication number: 20230317138
    Abstract: A memory device includes a clock receiver configured to receive, from a memory controller, a write clock that is used to receive write data during a data write operation, a duty monitor configured to generate first monitoring information by monitoring a duty of the write clock, and a duty adjuster configured to adjust the duty of the write clock in response to a duty control signal and output an adjusted write clock. The memory device provides the first monitoring information to the memory controller, and receives the duty control signal, generated using the first monitoring information, from the memory controller.
    Type: Application
    Filed: June 7, 2023
    Publication date: October 5, 2023
    Inventors: DAE-SIK MOON, GIL-HOON CHA, KI-SEOK OH, CHANG-KYO LEE, YEON-KYU CHOI, JUNG-HWAN CHOI, KYUNG-SOO HA, SEOK-HUN HYUN
  • Patent number: 11749338
    Abstract: A memory device includes a clock receiver configured to receive, from a memory controller, a write clock that is used to receive write data during a data write operation, a duty monitor configured to generate first monitoring information by monitoring a duty of the write clock, and a duty adjuster configured to adjust the duty of the write clock in response to a duty control signal and output an adjusted write clock. The memory device provides the first monitoring information to the memory controller, and receives the duty control signal, generated using the first monitoring information, from the memory controller.
    Type: Grant
    Filed: July 29, 2022
    Date of Patent: September 5, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dae-Sik Moon, Gil-Hoon Cha, Ki-Seok Oh, Chang-Kyo Lee, Yeon-Kyu Choi, Jung-Hwan Choi, Kyung-Soo Ha, Seok-Hun Hyun
  • Patent number: 11749337
    Abstract: A memory device includes a clock receiver configured to receive, from a memory controller, a write clock that is used to receive write data during a data write operation, a duty monitor configured to generate first monitoring information by monitoring a duty of the write clock, and a duty adjuster configured to adjust the duty of the write clock in response to a duty control signal and output an adjusted write clock. The memory device provides the first monitoring information to the memory controller, and receives the duty control signal, generated using the first monitoring information, from the memory controller.
    Type: Grant
    Filed: June 16, 2022
    Date of Patent: September 5, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dae-Sik Moon, Gil-Hoon Cha, Ki-Seok Oh, Chang-Kyo Lee, Yeon-Kyu Choi, Jung-Hwan Choi, Kyung-Soo Ha, Seok-Hun Hyun
  • Publication number: 20230274776
    Abstract: A memory device includes a clock receiver configured to receive, from a memory controller, a write clock that is used to receive write data during a data write operation, a duty monitor configured to generate first monitoring information by monitoring a duty of the write clock, and a duty adjuster configured to adjust the duty of the write clock in response to a duty control signal and output an adjusted write clock. The memory device provides the first monitoring information to the memory controller, and receives the duty control signal, generated using the first monitoring information, from the memory controller.
    Type: Application
    Filed: May 9, 2023
    Publication date: August 31, 2023
    Inventors: DAE-SIK MOON, GIL-HOON CHA, KI-SEOK OH, CHANG-KYO LEE, YEON-KYU CHOI, JUNG-HWAN CHOI, KYUNG-SOO HA, SEOK-HUN HYUN
  • Publication number: 20220383931
    Abstract: A memory device includes a clock receiver configured to receive, from a memory controller, a write clock that is used to receive write data during a data write operation, a duty monitor configured to generate first monitoring information by monitoring a duty of the write clock, and a duty adjuster configured to adjust the duty of the write clock in response to a duty control signal and output an adjusted write clock. The memory device provides the first monitoring information to the memory controller, and receives the duty control signal, generated using the first monitoring information, from the memory controller.
    Type: Application
    Filed: July 29, 2022
    Publication date: December 1, 2022
    Inventors: DAE-SIK MOON, GIL-HOON CHA, KI-SEOK OH, CHANG-KYO LEE, YEON-KYU CHOI, JUNG-HWAN CHOI, KYUNG-SOO HA, SEOK-HUN HYUN
  • Publication number: 20220310151
    Abstract: A memory device includes a clock receiver configured to receive, from a memory controller, a write clock that is used to receive write data during a data write operation, a duty monitor configured to generate first monitoring information by monitoring a duty of the write clock, and a duty adjuster configured to adjust the duty of the write clock in response to a duty control signal and output an adjusted write clock. The memory device provides the first monitoring information to the memory controller, and receives the duty control signal, generated using the first monitoring information, from the memory controller.
    Type: Application
    Filed: June 16, 2022
    Publication date: September 29, 2022
    Inventors: Dae-Sik MOON, Gil-Hoon CHA, Ki-Seonk OH, Chang-Kyo LEE, Yeon-Kyu CHOI, Jung-Hwan CHOI, Kyung-Soo HA, Seok-Hun HYUN
  • Patent number: 11423971
    Abstract: A memory device includes a clock receiver configured to receive, from a memory controller, a write clock that is used to receive write data during a data write operation, a duty monitor configured to generate first monitoring information by monitoring a duty of the write clock, and a duty adjuster configured to adjust the duty of the write clock in response to a duty control signal and output an adjusted write clock. The memory device provides the first monitoring information to the memory controller, and receives the duty control signal, generated using the first monitoring information, from the memory controller.
    Type: Grant
    Filed: December 29, 2021
    Date of Patent: August 23, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dae-Sik Moon, Gil-Hoon Cha, Ki-Seok Oh, Chang-Kyo Lee, Yeon-Kyu Choi, Jung-Hwan Choi, Kyung-Soo Ha, Seok-Hun Hyun
  • Patent number: 11393522
    Abstract: A memory device includes a clock receiver configured to receive, from a memory controller, a write clock that is used to receive write data during a data write operation, a duty monitor configured to generate first monitoring information by monitoring a duty of the write clock, and a duty adjuster configured to adjust the duty of the write clock in response to a duty control signal and output an adjusted write clock. The memory device provides the first monitoring information to the memory controller, and receives the duty control signal, generated using the first monitoring information, from the memory controller.
    Type: Grant
    Filed: January 14, 2021
    Date of Patent: July 19, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dae-Sik Moon, Gil-Hoon Cha, Ki-Seok Oh, Chang-Kyo Lee, Yeon-Kyu Choi, Jung-Hwan Choi, Kyung-Soo Ha, Seok-Hun Hyun
  • Publication number: 20220122648
    Abstract: A memory device includes a clock receiver configured to receive, from a memory controller, a write clock that is used to receive write data during a data write operation, a duty monitor configured to generate first monitoring information by monitoring a duty of the write clock, and a duty adjuster configured to adjust the duty of the write clock in response to a duty control signal and output an adjusted write clock. The memory device provides the first monitoring information to the memory controller, and receives the duty control signal, generated using the first monitoring information, from the memory controller.
    Type: Application
    Filed: December 29, 2021
    Publication date: April 21, 2022
    Inventors: DAE-SIK MOON, GIL-HOON CHA, KI-SEOK OH, CHANG-KYO LEE, YEON-KYU CHOI, JUNG-HWAN CHOI, KYUNG-SOO HA, SEOK-HUN HYUN
  • Publication number: 20220093144
    Abstract: A method of operating memory devices disposed in different ranks of a multi-rank memory device and sharing a signal line includes receiving, in all of the memory devices included in the multi-rank memory device, on-die termination (ODT) state information of the signal line. The method further includes storing, in each of the memory devices of the multi-rank memory device, the ODT state information of the signal line in a mode register. The method further includes generating, in each of the memory devices of the multi-rank memory device, a control signal based on the ODT state information of the signal line stored in the mode register. The method further includes changing, in each of the memory devices of the multi-rank memory device, an ODT setting of the signal line in response to the control signal.
    Type: Application
    Filed: December 1, 2021
    Publication date: March 24, 2022
    Inventors: DAE-SIK MOON, KYUNG-SOO HA, YOUNG-SOO SOHN, KI-SEOK OH, CHANG-KYO LEE, JIN-HOON JANG, YEON-KYU CHOI, SEOK-HUN HYUN
  • Patent number: 11211102
    Abstract: A method of operating memory devices disposed in different ranks of a multi-rank memory device and sharing a signal line includes receiving, in all of the memory devices included in the multi-rank memory device, on-die termination (ODT) state information of the signal line. The method further includes storing, in each of the memory devices of the multi-rank memory device, the ODT state information of the signal line in a mode register. The method further includes generating, in each of the memory devices of the multi-rank memory device, a control signal based on the ODT state information of the signal line stored in the mode register. The method further includes changing, in each of the memory devices of the multi-rank memory device, an ODT setting of the signal line in response to the control signal.
    Type: Grant
    Filed: November 25, 2020
    Date of Patent: December 28, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dae-Sik Moon, Kyung-Soo Ha, Young-Soo Sohn, Ki-Seok Oh, Chang-Kyo Lee, Jin-Hoon Jang, Yeon-Kyu Choi, Seok-Hun Hyun
  • Publication number: 20210166749
    Abstract: A memory device includes a clock receiver configured to receive, from a memory controller, a write clock that is used to receive write data during a data write operation, a duty monitor configured to generate first monitoring information by monitoring a duty of the write clock, and a duty adjuster configured to adjust the duty of the write clock in response to a duty control signal and output an adjusted write clock. The memory device provides the first monitoring information to the memory controller, and receives the duty control signal, generated using the first monitoring information, from the memory controller.
    Type: Application
    Filed: January 14, 2021
    Publication date: June 3, 2021
    Inventors: DAE-SIK MOON, GIL-HOON CHA, KI-SEOK OH, CHANG-KYO LEE, YEON-KYU CHOI, JUNG-HWAN CHOI, KYUNG-SOO HA, SEOK-HUN HYUN
  • Publication number: 20210082479
    Abstract: A method of operating memory devices disposed in different ranks of a multi-rank memory device and sharing a signal line includes receiving, in all of the memory devices included in the multi-rank memory device, on-die termination (ODT) state information of the signal line. The method further includes storing, in each of the memory devices of the multi-rank memory device, the ODT state information of the signal line in a mode register. The method further includes generating, in each of the memory devices of the multi-rank memory device, a control signal based on the ODT state information of the signal line stored in the mode register. The method further includes changing, in each of the memory devices of the multi-rank memory device, an ODT setting of the signal line in response to the control signal.
    Type: Application
    Filed: November 25, 2020
    Publication date: March 18, 2021
    Inventors: DAE-SIK MOON, KYUNG-SOO HA, YOUNG-SOO SOHN, KI-SEOK OH, CHANG-KYO LEE, JIN-HOON JANG, YEON-KYU CHOI, SEOK-HUN HYUN
  • Patent number: 10923175
    Abstract: A memory device includes a clock receiver configured to receive, from a memory controller, a write clock that is used to receive write data during a data write operation, a duty monitor configured to generate first monitoring information by monitoring a duty of the write clock, and a duty adjuster configured to adjust the duty of the write clock in response to a duty control signal and output an adjusted write clock. The memory device provides the first monitoring information to the memory controller, and receives the duty control signal, generated using the first monitoring information, from the memory controller.
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: February 16, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dae-Sik Moon, Gil-Hoon Cha, Ki-Seok Oh, Chang-Kyo Lee, Yeon-Kyu Choi, Jung-Hwan Choi, Kyung-Soo Ha, Seok-Hun Hyun
  • Patent number: 10885950
    Abstract: A method of operating memory devices disposed in different ranks of a multi-rank memory device and sharing a signal line includes receiving, in all of the memory devices included in the multi-rank memory device, on-die termination (ODT) state information of the signal line. The method further includes storing, in each of the memory devices of the multi-rank memory device, the ODT state information of the signal line in a mode register. The method further includes generating, in each of the memory devices of the multi-rank memory device, a control signal based on the ODT state information of the signal line stored in the mode register. The method further includes changing, in each of the memory devices of the multi-rank memory device, an ODT setting of the signal line in response to the control signal.
    Type: Grant
    Filed: March 25, 2019
    Date of Patent: January 5, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dae-Sik Moon, Kyung-Soo Ha, Young-Soo Sohn, Ki-Seok Oh, Chang-Kyo Lee, Jin-Hoon Jang, Yeon-Kyu Choi, Seok-Hun Hyun