Abstract: A diode device and a semiconductor device including the diode device, the diode device including an active layer including a 5d transition mixed-metal oxide including a first element and a second element different from the first element. The composition ratios of the first element relative to the second element incrementally varies along a thickness direction of the active layer.

Abstract: A perovskite oxide thin film comprising a compound represented by Chemical Formula 1, and has a layered perovskite structure, wherein a ratio of A? atoms to all A-sites in one A-site (A+A?) atomic layer is different from that of three or more other A-site atomic layers in a thickness direction.

Abstract: A spin orbit torque (spin orbit torque, SOT) material may include a substrate and an epitaxial thin film including a plurality of sub-stacks on the substrate, a manufacturing method of the SOT material, and a magnetic memory device including the SOT material are provided.

Abstract: Heterostructures that include a bilayer composed of epitaxial layers of vanadium dioxide having different rutile-to-monoclinic phase transition temperatures are provided. Also provided are electrical switches that incorporate the heterostructures. The bilayers are characterized in that they undergo a single-step, collective, metal-insulator transition at an electronic transition temperature. At temperatures below the electronic transition temperature, the layer of vanadium dioxide having the higher rutile-to-monoclinic phase transition temperature has an insulating monoclinic crystalline phase, which is converted to a metallic monoclinic crystalline phase at temperatures above the electronic transition temperature.

Abstract: Switches for electromagnetic radiation, including radiofrequency switches and optical switches, are provided. Also provided are methods of using the switches. The switches incorporate layers of high quality VO2 that are composed of a plurality of connected crystalline VO2 domains having the same crystal structure and orientation.

Abstract: Switches for electromagnetic radiation, including radiofrequency switches and optical switches, are provided. Also provided are methods of using the switches. The switches incorporate layers of high quality VO2 that are composed of a plurality of connected crystalline VO2 domains having the same crystal structure and orientation.

Abstract: Switches for electromagnetic radiation, including radiofrequency switches and optical switches, are provided. Also provided are methods of using the switches. The switches incorporate layers of high quality VO2 that are composed of a plurality of connected crystalline VO2 domains having the same crystal structure and orientation.

Abstract: Heterostructures that include a bilayer composed of epitaxial layers of vanadium dioxide having different rutile-to-monoclinic phase transition temperatures are provided. Also provided are electrical switches that incorporate the heterostructures. The bilayers are characterized in that they undergo a single-step, collective, metal-insulator transition at an electronic transition temperature. At temperatures below the electronic transition temperature, the layer of vanadium dioxide having the higher rutile-to-monoclinic phase transition temperature has an insulating monoclinic crystalline phase, which is converted to a metallic monoclinic crystalline phase at temperatures above the electronic transition temperature.

Abstract: Switches for electromagnetic radiation, including radiofrequency switches and optical switches, are provided. Also provided are methods of using the switches. The switches incorporate layers of high quality VO2 that are composed of a plurality of connected crystalline VO2 domains having the same crystal structure and orientation.

Abstract: Layers of high quality VO2 and methods of fabricating the layers of VO2 are provided. The layers are composed of a plurality of connected crystalline VO2 domains having the same crystal structure and the same epitaxial orientation.

Abstract: Layers of high quality VO2 and methods of fabricating the layers of VO2 are provided. The layers are composed of a plurality of connected crystalline VO2 domains having the same crystal structure and the same epitaxial orientation.

Abstract: Layered oxide structures comprising an overlayer of high quality VO2 and methods of fabricating the layered oxide structures are provided. Also provided are high-speed switches comprising the layered structures and methods of operating the high-speed switches. The layered oxide structures include high quality VO2 epitaxial films on isostructural SnO2 growth templates.

Abstract: The present invention relates to a ferroelectric memory device having a multilevel polarization (MLP) state generated due to adjustment of a displacement current and to a method for manufacturing the ferroelectric memory device.

Abstract: The present application relates to a ferroelectric memory device having a multilevel polarization (MLP) state generated due to adjustment of a displacement current and to a method for manufacturing the ferroelectric memory device.