Patents by Inventor DaeSub BYUN

DaeSub BYUN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device having structure capable of suppressing oxygen diffusion and method of manufacturing the same
    Patent number: 9412861
    Abstract: A semiconductor device is provided. The device includes a substrate; a gate dielectric film formed on the substrate; a gate electrode formed on the gate dielectric film, and source and drain electrodes, wherein a boundary between the gate dielectric film and the substrate is formed with an F (fluorine)-terminated surface to serve as a barrier for preventing oxygen diffusion.
    Type: Grant
    Filed: February 9, 2015
    Date of Patent: August 9, 2016
    Assignee: INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
    Inventors: HoonJung Oh, DaeHong Ko, SangMo Koo, InGeun Lee, Hwan Lee, DaeSub Byun, HyunCheol Jang
  • SEMICONDUCTOR DEVICE HAVING STRUCTURE CAPABLE OF SUPPRESSING OXYGEN DIFFUSION AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20150228778
    Abstract: A semiconductor device is provided. The device includes a substrate; a gate dielectric film formed on the substrate; a gate electrode formed on the gate dielectric film, and source and drain electrodes, wherein a boundary between the gate dielectric film and the substrate is formed with an F (fluorine)-terminated surface to serve as a barrier for preventing oxygen diffusion.
    Type: Application
    Filed: February 9, 2015
    Publication date: August 13, 2015
    Inventors: HoonJung OH, DaeHong KO, SangMo KOO, InGeun LEE, Hwan LEE, DaeSub BYUN, HyunCheol JANG