Patents by Inventor Dae Woo Jeon

Dae Woo Jeon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Apparatus and method for cloud-based vehicle data security management
    Patent number: 11968312
    Abstract: Disclosed herein are an apparatus and method for processing vehicle data security based on a cloud.
    Type: Grant
    Filed: November 16, 2021
    Date of Patent: April 23, 2024
    Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Sang-Woo Lee, Dae-Won Kim, Jin-Yong Lee, Boo-Sun Jeon, Bo-Heung Chung, Hong-Il Ju, Joong-Yong Choi
  • MANUFACTURING APPARATUS AND METHOD OF HIGH QUALITY ß-Ga2O3 THIN FILM GROWN BY HALIDE VAPOR PHASE EPITAXY GROWTH
    Publication number: 20230175168
    Abstract: Proposed is a manufacturing method of a high-quality ?-Ga2O3 thin film using a high-quality ?-Ga2O3 thin film manufacturing apparatus based on halide vapor phase epitaxy (HVPE) growth. The apparatus includes a reaction gas generating unit in which a chlorine-based gas and Ga in a source zone react to generate GaClx, a dopant gas supply unit, an additional chlorine-based gas supply unit for supplying an additional chlorine-based gas in a source tube, oxygen-based gas supply units, and a susceptor unit supporting a substrate on which a Ga2O3 thin film is to be formed. During the epitaxial growth, the additional hydrogen chloride (HCl) gas is supplied to reduce the pre-reaction between precursors, and a movement distance to the susceptor can is increased to increase growth rate and growth speed to control the crystallinity. Thus, high-quality epitaxial growth and a high production yield can be achieved.
    Type: Application
    Filed: November 9, 2022
    Publication date: June 8, 2023
    Applicant: Korea Institute of Ceramic Engineering and Technology
    Inventors: Dae-Woo JEON, Ji-Hyeon Park
  • Manufacturing method of gallium oxide thin film for power semiconductor using dopant activation technology
    Patent number: 11476116
    Abstract: Disclosed is a method of manufacturing a gallium oxide thin film for a power semiconductor using a dopant activation technology that maximizes dopant activation effect and rearrangement effect of lattice in a grown epitaxial at the same time by performing in-situ annealing in a growth condition of a nitrogen atmosphere at the same time as the growth of a doped layer is finished.
    Type: Grant
    Filed: June 25, 2021
    Date of Patent: October 18, 2022
    Assignee: KOREA INSTITUTE OF CERAMIC ENGINEERING AND TECHNOLOGY
    Inventors: Dae-Woo Jeon, Ji-Hyeon Park
  • MANUFACTURING METHOD OF GALLIUM OXIDE THIN FILM FOR POWER SEMICONDUCTOR USING DOPANT ACTIVATION TECHNOLOGY
    Publication number: 20220051892
    Abstract: Disclosed is a method of manufacturing a gallium oxide thin film for a power semiconductor using a dopant activation technology that maximizes dopant activation effect and rearrangement effect of lattice in a grown epitaxial at the same time by performing in-situ annealing in a growth condition of a nitrogen atmosphere at the same time as the growth of a doped layer is finished.
    Type: Application
    Filed: June 25, 2021
    Publication date: February 17, 2022
    Inventors: Dae-Woo JEON, Ji-Hyeon PARK
  • Method for manufacturing a group III nitride substrate using a chemical lift-off process
    Patent number: 9171717
    Abstract: The non-polar or semi-polar group III nitride layer disclosed in a specific example of the present invention can be used for substrates for various electronic devices, wherein problems of conventional polar group III nitride substrates are mitigated or solved by using the nitride substrate of the invention, and further the nitride substrate can be manufactured by a chemical lift-off process.
    Type: Grant
    Filed: November 4, 2011
    Date of Patent: October 27, 2015
    Assignee: KOREA PHOTONICS TECHNOLOGY INSTITUTE
    Inventors: Jin Woo Ju, Jong Hyeob Baek, Hyung Jo Park, Sang Hern Lee, Tak Jung, Ja Yeon Kim, Hwa Seop Oh, Tae Hoon Chung, Yoon Seok Kim, Dae Woo Jeon
  • METHOD FOR MANUFACTURING A GROUP III NITRIDE SUBSTRATE USING A CHEMICAL LIFT-OFF PROCESS
    Publication number: 20130193558
    Abstract: The non-polar or semi-polar group III nitride layer disclosed in a specific example of the present invention can be used for substrates for various electronic devices, wherein problems of conventional polar group III nitride substrates are mitigated or solved by using the nitride substrate of the invention, and further the nitride substrate can be manufactured by a chemical lift-off process.
    Type: Application
    Filed: November 4, 2011
    Publication date: August 1, 2013
    Applicant: Korea Photonics Technology Institute
    Inventors: Jin Woo Ju, Jong Hyeob Baek, Hyung Jo Park, Sang Hern Lee, Tak Jung, Ja Yeon Kim, Hwa Seop Oh, Tae Hoon Chung, Yoon Seok Kim, Dae Woo Jeon