Abstract: A secondary battery according to an embodiment of the present disclosure includes an electrode assembly to which an electrode lead is attached; a case accommodating the electrode assembly so that a portion of the electrode lead is exposed to the outside; a sealing portion formed in the case to seal the electrode assembly; and a lead film covering a portion of an outer surface of the electrode lead and interposed between the electrode lead and the sealing portion, wherein the electrode lead includes a first region not corresponding to the lead film and exposed to the outside of the case, a second region corresponding to the lead film, and a third region not corresponding to the lead film and not exposed to the outside of the case, wherein a separation groove may be located in the third region.

Abstract: An encoding/decoding apparatus and method for controlling a channel signal is disclosed, wherein the encoding apparatus may include an encoder to encode an object signal, a channel signal, and rendering information for the channel signal, and a bit stream generator to generate, as a bit stream, the encoded object signal, the encoded channel signal, and the encoded rendering information for the channel signal.

Abstract: Disclosed is a battery cell, which includes a battery case having an accommodation portion in which an electrode assembly is mounted, and a sealing portion formed by sealing an outer periphery thereof; an electrode lead electrically connected to an electrode tab included in the electrode assembly and protruding out of the battery case via the sealing portion; and a lead film located at a portion corresponding to the sealing portion in at least one of an upper portion and a lower portion of the electrode lead, wherein a gas discharge guiding unit is inserted in the lead film, the battery case includes a cover portion extending from the sealing portion, and the cover portion is located on the lead film and protrudes in an outer direction of the battery case.

Abstract: The present disclosure relates to a secondary battery comprising an electrode assembly having an electrode lead attached thereto, a case comprising a receiving portion in which the electrode assembly is received and a sealing portion comprising a sealant resin and configured to seal the electrode assembly, a lead film configured to cover a portion of an outer surface of the electrode lead and interposed between the electrode lead and the case, a vent area disposed in at least a portion of the case, and a vent member comprising a first layer comprising a resin having lower melting point than the sealant resin, and a second layer disposed on at least one surface of the first layer and comprising an adhesive material. The vent member may be inserted into the vent area. A thickness of the second layer may be equal to or smaller than 5 ?m.

Abstract: Provided are an ultrasound imaging apparatus and a method of processing an ultrasound image. The ultrasound imaging apparatus includes a display configured to display a moving image consisting of a plurality of ultrasound images that are played back according to a time order together with at least one icon, corresponding to at least one piece of change information for changing a display of at least one of the plurality of ultrasound images, in association with the time order.

Abstract: Provided are an ultrasound imaging apparatus including a probe and a method of controlling the ultrasound imaging apparatus. The method includes: comparing a signal value acquired through an input unit with first and second threshold values; and performing an operation that is determined based on a result of the comparison.

Abstract: Provided are an ultrasound imaging apparatus and a method of processing an ultrasound image. The ultrasound imaging apparatus includes a display configured to display a moving image consisting of a plurality of ultrasound images that are played back according to a time order together with at least one icon, corresponding to at least one piece of change information for changing a display of at least one of the plurality of ultrasound images, in association with the time order.

Abstract: Provided are an ultrasound imaging apparatus and a method of processing an ultrasound image. The ultrasound imaging apparatus includes a display configured to display a moving image consisting of a plurality of ultrasound images that are played back according to a time order together with at least one icon, corresponding to at least one piece of change information for changing a display of at least one of the plurality of ultrasound images, in association with the time order.

Abstract: Provided are an ultrasound imaging apparatus and a method of processing an ultrasound image. The ultrasound imaging apparatus includes a display configured to display a moving image consisting of a plurality of ultrasound images that are played back according to a time order together with at least one icon, corresponding to at least one piece of change information for changing a display of at least one of the plurality of ultrasound images, in association with the time order.

Abstract: An ultrasound data relaying method is performed by an ultrasound data relaying apparatus. According to the method, user information is received from a mobile terminal connected to the ultrasound data relaying apparatus. Ultrasound photographing information is received from an ultrasound diagnosis apparatus. The ultrasound photographing information is transmitted to the mobile terminal based on the received user information.

Abstract: Provided are medical imaging method and apparatus for providing guide information, which allow a user to easily use the guide information provided by the medical imaging apparatus. A method of providing guide information in a medical imaging system includes: transmitting, by the external device, a request for a guide to the medical imaging apparatus; determining, by the medical imaging apparatus, guide information corresponding to the request for the guide; transmitting, by the medical imaging apparatus, the determined guide information to the external device; and displaying the guide information by the external device.

Abstract: Provided are an ultrasound imaging apparatus including a probe and a method of controlling the ultrasound imaging apparatus. The method includes: comparing a signal value acquired through an input unit with first and second threshold values; and performing an operation that is determined based on a result of the comparison.

Abstract: Semiconductor devices are provided. The semiconductor devices may include a plurality of gate structures disposed on a semiconductor substrate, each of the gate structures including a floating gate, an inter-gate dielectric layer, and a control gate. The semiconductor devices may also include liners on opposing sidewalls of adjacent ones of the gate structures. The liners may define a gap. A first width of the gap may be less than a second width of the gap.

Abstract: Semiconductor devices including a plurality of gate structures disposed on a semiconductor substrate are provided. Each of the gate structures includes a tunnel dielectric layer, a floating gate, an inter-gate dielectric layer, a control gate, and a mask layer. Liners cover opposing sidewalls of adjacent floating gates. Spacers are disposed on the liners, the spacers protruding from opposing sidewalls of adjacent ones of the gate structures, and a top of each of the spacers is disposed below a top of a corresponding one of the gate structures. The liners define sidewalls of respective air gaps and the spacers define tops of the respective air gaps.

Abstract: Semiconductor devices are provided. The semiconductor devices may include a plurality of gate structures disposed on a semiconductor substrate, each of the gate structures including a floating gate, an inter-gate dielectric layer, and a control gate. The semiconductor devices may also include liners on opposing sidewalls of adjacent ones of the gate structures. The liners may define a gap. A first width of the gap may be less than a second width of the gap.

Abstract: Semiconductor devices including a plurality of gate structures disposed on a semiconductor substrate are provided. Each of the gate structures includes a tunnel dielectric layer, a floating gate, an inter-gate dielectric layer, a control gate, and a mask layer. Liners cover opposing sidewalls of adjacent floating gates. Spacers are disposed on the liners, the spacers protruding from opposing sidewalls of adjacent ones of the gate structures, and a top of each of the spacers is disposed below a top of a corresponding one of the gate structures. The liners define sidewalls of respective air gaps and the spacers define tops of the respective air gaps.

Abstract: A non-volatile device includes a semiconductor substrate having a fuse window region. At least one fuse crosses the fuse window region. Field regions are arranged outside of the fuse window region and arranged under end portions of the at least one fuse. An isolation layer is configured to isolate the field regions. A fuse insulating layer is interposed between the at least one fuse and the field regions.

Abstract: A non-volatile memory device including a barrier spacer that serves to protect a control gate, including a metal layer, from damage that may result from exposure to a cleaning solution and/or oxygen. With the barrier spacer layer, a cleaning process using a high-power cleaning solution may be used to effectively remove etch byproducts. An oxidation process may be performed to cure etch damage of an intergate dielectric pattern, a floating gate and a gate insulator. The barrier spacer and/or the oxidation process enable a non-volatile memory device having enhanced speed and reliability to be formed.

Abstract: Methods of fabricating a semiconductor device having multi-gate insulation layers and semiconductor devices fabricated thereby are provided. The method includes forming a pad insulation layer and an initial high voltage gate insulation layer on a first region and a second region of a semiconductor substrate respectively. The initial high voltage gate insulation layer is formed to be thicker than the pad insulation layer. A first isolation layer that penetrates the pad insulation layer and is buried in the semiconductor substrate is formed to define a first active region in the first region, and a second isolation layer that penetrates the initial high voltage gate insulation layer and is buried in the semiconductor substrate is formed to define a second active region in the second region. The pad insulation layer is then removed to expose the first active region. A low voltage gate insulation layer is formed on the exposed first active region.

Abstract: Methods for forming semiconductor memory structures including air gaps between adjacent gate structures are provided. The volume of the air gaps is maximized and the width thereof made uniform in order to minimize the parasitic capacitance and any variance therein between the gate structures. The methods include forming an insulation layer between adjacent gate structures and subsequently etching the insulation layer to leave an air gap. Devices fabricated in accordance with the methods are also provided.