Patents by Inventor Dafei Jin

Dafei Jin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12254999
    Abstract: Qubit devices require fast operation, long coherence, and large scalability to be viable for implementation in quantum computing systems. A qubit platform device having long coherence, scalability, and fast operation includes a substrate, or trap region, configured to structurally support solid neon thereon. A trap electrode is configured to provide a trap voltage to the trap region and which creates a confining electrical field to a confining region adjacent to the trap region. The confining region being a region of space to confine an electron therein, confining the electron against the solid neon. First and second sets of guard electrodes are configured to provide variable electric potentials to first and second guard regions to allow for trapping and manipulation of a single electron in the confining region.
    Type: Grant
    Filed: February 15, 2022
    Date of Patent: March 18, 2025
    Assignees: UCHICAGO ARGONNE, LLC, THE UNIVERSITY OF CHICAGO
    Inventors: Dafei Jin, Xianjing Zhou, Gerwin Koolstra, Ge Yang, David I. Schuster
  • Publication number: 20240304353
    Abstract: Qubit devices require fast operation, long coherence, and large scalability to be viable for implementation in quantum computing systems. A qubit platform device having long coherence, scalability, and fast operation includes a substrate, or trap region, configured to structurally support solid neon thereon. A trap electrode is configured to provide a trap voltage to the trap region and which creates a confining electrical field to a confining region adjacent to the trap region. The confining region being a region of space to confine an electron therein, confining the electron against the solid neon. First and second sets of guard electrodes are configured to provide variable electric potentials to first and second guard regions to allow for trapping and manipulation of a single electron in the confining region.
    Type: Application
    Filed: February 15, 2022
    Publication date: September 12, 2024
    Inventors: Dafei Jin, Xianjing Zhou, Gerwin Koolstra, Ge Yang, David I. Schuster