Abstract: Process for treating a magnetic structure, wherein it comprises the following steps: providing a magnetic structure comprising one first layer of magnetic material comprising a CoFeB alloy; irradiating the magnetic structure with light low-energy ions; and simultaneously holding the magnetic structure with a preset temperature profile and for a preset time.

Abstract: Process for treating a magnetic structure, wherein it comprises the following steps: providing a magnetic structure comprising one first layer of magnetic material comprising a CoFeB alloy; irradiating the magnetic structure with light low-energy ions; and simultaneously holding the magnetic structure with a preset temperature profile and for a preset time.

Abstract: Memory cell structures make use of the extraordinary Hall effect (EHE) for increased data storage capacity. A memory cell has a ferromagnetic structure which includes at least a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer in between the first and the second ferromagnetic layers. The first and the second ferromagnetic layers exhibit perpendicular magnetic anisotropy and have magnetic moments which are set in accordance with one of a plurality of magnetic orientation sets of the ferromagnetic structure, and the ferromagnetic structure exhibits one of a plurality of predetermined extraordinary Hall resistances RH in accordance with the magnetic orientation set. The extraordinary Hall resistance is exhibited between first and second ends of the ferromagnetic structure across a path which intersects a bias current path between third and fourth ends of the ferromagnetic structure.

Abstract: Memory cell structures make use of the extraordinary Hall effect (EHE) for increased data storage capacity. A memory cell has a ferromagnetic structure which includes at least a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer in between the first and the second ferromagnetic layers. The first and the second ferromagnetic layers exhibit perpendicular magnetic anisotropy and have magnetic moments which are set in accordance with one of a plurality of magnetic orientation sets of the ferromagnetic structure, and the ferromagnetic structure exhibits one of a plurality of predetermined extraordinary Hall resistances RH in accordance with the magnetic orientation set. The extraordinary Hall resistance is exhibited between first and second ends of the ferromagnetic structure across a path which intersects a bias current path between third and fourth ends of the ferromagnetic structure.

Abstract: The invention provides a method of treating a material to cause the material to evolve from one phase to a more ordered phase, the method comprising an operation of irradiating the material in which the irradiating particles are suitable, by their nature and by their energy, for inducing displacements of the atoms in the material towards positions that favor ordering of the material. Advantageously, the invention also provides apparatus for magnetically recording information, the apparatus comprising a material deposited on a substrate at a temperature of less than 350° C. and that has been subjected to irradiation with irradiating particles that are suitable, by their nature and their energy, for inducing displacements of the atoms in the material towards positions that favor relaxation of the material.