Abstract: The electronic device of the invention comprises one or more active elements, each comprising a first and a second electrode and an active layer of organic material separating the first and second electrodes. Examples of active elements are thin-film transistors and light-emitting diodes. The active layer comprises a polymeric material having conjugated units A and non-conjugated intermediate units B, which intermediate units B separate the conjugated units A from each other, such that no conjugation extends from a first conjugated unit A1 to a second conjugated unit A2. The polymeric material may be a polymer network, an alternating copolymer or a polymer in which the conjugated units are present in side chains. The polymer can be prepared from monomers having a B1-A1-B2 structure, wherein at least one of B1 and B2 comprises a reactive group enabling polymerization.

Abstract: A non-volatile ferroelectric memory device is proposed which comprises a combination of an organic ferroelectric polymer with an organic ambipolar semiconductor. The devices of the present invention are compatible with—and fully exploit the benefits of polymers, i.e. solution processing, low-cost, low temperature layer deposition and compatibility with flexible substrates.

Abstract: The electronic device comprises an inverter having a first and a second fieldeffect transistor with an active layer comprising a first organic semiconductor material of the first conductivity type and a second organic semiconductor material of the second conductivity type. The active layer can be provided from a solution, for instance in that it is a blend of two materials.

Abstract: A matrix array display device (100) is mounted on a flexible substrate (110) such as a polyimide substrate, and has a plurality of first conductors (120) crossing a plurality of second conductors (130), with a plurality of pixels (140) being located in the vicinity of a crossing between a first conductor (120) and a second conductor (130). The display device (100) includes a flexible shift register (150) and an optional further flexible shift register (160) for addressing the first conductors (120). The flexible shift register (150), which preferably is realized using organic semiconductor materials, occupies a smaller area of the flexible substrate (110) than for instance a bus structure, thus increasing the effective display area of the display device (100).

Abstract: Provided is a filed-effect transistor with an organic semiconductor material showing ambipolar behaviour. Thereto, the organic semiconductor material enabling the ambipolar behaviour is a material with a small band gap.

Abstract: The electronic device of the invention comprises one or more active elements, each comprising a first and a second electrode and an active layer of organic material separating the first and second electrodes. Examples of active elements are thin-film transistors and light-emitting diodes. The active layer comprises a polymeric material having conjugated units A and non-conjugated intermediate units B, which intermediate units B separate the conjugated units A from each other, such that no conjugation extends from a first conjugated unit A1 to a second conjugated unit A2. The polymeric material may be a polymer network, an alternating copolymer or a polymer in which the conjugated units are present in side chains. The polymer can be prepared from monomers having a B1-A1-B2 structure, wherein at least one of B1 and B2 comprises a reactive group enabling polymerization.

Abstract: The invention relates to a substrate which is made from paper and is provided with at least one integrated circuit which is produced from a semiconductive organic polymer. A semiconductive organic polymer of this nature, when used as the base material for the integrated circuit, leads to the possibility of directly producing the substrate in the required thickness, to the need for support layers and/or protective layers being eliminated, and to the possibility of reducing the cost price of the substrate compared to substrates which comprise an integrated circuit of the silicon type.