Abstract: A display device includes: a multiplexer in a first region of a non-display region, and including K MUX transistors which are commonly connected to a data channel line and are connected to K data lines; a pseudo multiplexer disposed in a third region of the non-display region, and including K pseudo MUX transistors corresponding to the K MUX transistors; and K MUX control lines and K pseudo MUX control lines in a second region between the first and third regions, the K MUX control lines connected to the K MUX transistors, the K pseudo MUX control lines connected to the K pseudo MUX transistors, wherein the second region includes a first partial region adjacent to the first region and having the K MUX control lines thereon, and a second partial area adjacent to the third region and having the K pseudo MUX control lines thereon.

Abstract: A display device includes: a multiplexer in a first region of a non-display region, and including K MUX transistors which are commonly connected to a data channel line and are connected to K data lines; a pseudo multiplexer disposed in a third region of the non-display region, and including K pseudo MUX transistors corresponding to the K MUX transistors; and K MUX control lines and K pseudo MUX control lines in a second region between the first and third regions, the K MUX control lines connected to the K MUX transistors, the K pseudo MUX control lines connected to the K pseudo MUX transistors, wherein the second region includes a first partial region adjacent to the first region and having the K MUX control lines thereon, and a second partial area adjacent to the third region and having the K pseudo MUX control lines thereon.

Abstract: A barrier panel for a display device includes a first substrate and a second substrate facing each other with a liquid crystal layer therebetween, a plurality of first barrier electrodes that extend along a second direction on the first substrate and are operated individually, a second barrier electrode that is on the second substrate and includes a plurality of electrode patterns which are separated from each other with respect to a first direction perpendicular to the second direction, and a plurality of column spacers between the first and second substrates.

Abstract: A barrier panel for a display device includes a first substrate and a second substrate facing each other with a liquid crystal layer therebetween, a plurality of first barrier electrodes that extend along a second direction on the first substrate and are operated individually, a second barrier electrode that is on the second substrate and includes a plurality of electrode patterns which are separated from each other with respect to a first direction perpendicular to the second direction, and a plurality of column spacers between the first and second substrates.

Abstract: A crosstalk processing module configured to process a crosstalk of an image signal includes a correction element generation unit, a storage, and a crosstalk correction check unit. The correction element generation unit receives the image signal and input information associated with at least a size of the image signal and generates seed values and correction parameters which are used to correct the crosstalk, based on the input information and a representative channel image signal obtained by separating the image signal with respect to color. The storage stores the seed values and the correction parameters. The crosstalk correction check unit receives the image signal, receives the seed values and the correction parameters from the storage, corrects the crosstalk, and outputs a final image signal and pass/fail information indicating a pass or fail of the correction of the crosstalk based on a plurality of reference values.

Abstract: A crosstalk processing module configured to process a crosstalk of an image signal includes a correction element generation unit, a storage, and a crosstalk correction check unit. The correction element generation unit receives the image signal and input information associated with at least a size of the image signal and generates seed values and correction parameters which are used to correct the crosstalk, based on the input information and a representative channel image signal obtained by separating the image signal with respect to color. The storage stores the seed values and the correction parameters. The crosstalk correction check unit receives the image signal, receives the seed values and the correction parameters from the storage, corrects the crosstalk, and outputs a final image signal and pass/fail information indicating a pass or fail of the correction of the crosstalk based on a plurality of reference values.

Abstract: A plating method includes supplying a plating solution into a plating bath, immersing a first substrate having a lower metal interconnection and a photoresist pattern in the plating solution, performing a first plating process and forming a first plating pattern on the first substrate, removing the first substrate from the plating solution, collecting a sample of the plating solution, analyzing a photoresist residue included in the sample, immersing a second substrate in the plating solution, and performing a second plating process and forming a second plating pattern on the second substrate.

Abstract: A cleaning solution for a quartz part and a method for cleaning the quartz part are provided. The cleaning solution includes from about 5 to about 35 wt % of an ammonium compound, from about 7 to about 55 wt % of an acidic oxidizing agent, from about 5 to about 30 wt % of a fluorine compound and a remaining amount of water. Residual thin films and impurities on the surface of the quartz part may be removed while reducing the damage onto the quartz part.

Abstract: A method of manufacturing a semiconductor device includes preparing a substrate on which a fuze line containing copper is formed. The method further includes cutting the fuze line by emitting a laser beam, and applying a composition for etching copper to the substrate to finely etch a cutting area of the fuze line and to substantially remove at least one of a copper residue and a copper oxide residue remaining near the cutting area. The composition for etching copper includes about 0.01 to about 10 percent by weight of an organic acid, about 0.01 to 1.0 percent by weight of an oxidizing agent, and a protic solvent.

Abstract: A method of manufacturing a semiconductor device includes preparing a substrate on which a fuze line containing copper is formed. The method further includes cutting the fuze line by emitting a laser beam, and applying a composition for etching copper to the substrate to finely etch a cutting area of the fuze line and to substantially remove at least one of a copper residue and a copper oxide residue remaining near the cutting area. The composition for etching copper includes about 0.01 to about 10 percent by weight of an organic acid, about 0.01 to 1.0 percent by weight of an oxidizing agent, and a protic solvent.

Abstract: In a cleaning composition, a method of cleaning a semiconductor substrate and a method of manufacturing a semiconductor device, the cleaning composition includes about 0.5 to about 5% by weight of an organic ammonium hydroxide compound, about 0.1 to about 3% by weight of a fluoride compound, about 0.1 to about 3% by weight of a buffering agent, about 0.5 to about 5% by weight of an etching accelerant, and a remainder of water.

Abstract: A cleaning solution for a quartz part and a method for cleaning the quartz part are provided. The cleaning solution includes from about 5 to about 35 wt % of an ammonium compound, from about 7 to about 55 wt % of an acidic oxidizing agent, from about 5 to about 30 wt % of a fluorine compound and a remaining amount of water. Residual thin films and impurities on the surface of the quartz part may be removed while reducing the damage onto the quartz part.

Abstract: In a cleaning composition, a method of cleaning a semiconductor substrate and a method of manufacturing a semiconductor device, the cleaning composition includes about 0.5 to about 5% by weight of an organic ammonium hydroxide compound, about 0.1 to about 3% by weight of a fluoride compound, about 0.1 to about 3% by weight of a buffering agent, about 0.5 to about 5% by weight of an etching accelerant, and a remainder of water.