Abstract: A fabricating method for growing a single crystal of a multi-type compound comprises steps of: (a) providing a seed crystal at a deposition region; (b) providing a powder material at a high purity source region; and (c) undertaking a vacuum process, a heating process, a growing process, a cooling process to prepare the singe crystal, wherein a heating source is used to move to control a temperature gradient within a gas temperature control region to form a temperature gradient motion so that the temperature gradient presents a variation. By reducing the possibility of other deficiencies being continuously induced in the following crystal growth process owing to the local slime occurring at the rear side of the seed crystal from the void deficiencies at the rear side of the original seed crystal may be excluded, but also the possibility of other multi-type bodies being induced by the above vacancies.

Abstract: A method of producing a high-purity carbide mold includes the steps of (A) providing a template; (B) putting the template at a deposition region in a growth chamber; (C) putting a carbide raw material in the growth chamber; (D) providing a heating field; (E) introducing a gas; (F) depositing the carbide raw material; and (G) removing the template. The method is able to produce a mold from a high-purity carbide with a purity of 93% or above and therefore is effective in solving known problems with carbide molds, that is, low hardness and low purity.

Abstract: A deposing apparatus includes a crucible having a deposition area formed inside the crucible; a heat sink partially embedded in the crucible and capable of transferring heat from the deposition area; a heat-insulator fixedly surrounding without covering the deposing area; and a thermal reflector securely mounted on a free surface of the heat-insulator without covering the deposition area and having a reflecting face with a slope extending from a side wall of the crucible to the deposition area. The heat-insulator has a relatively low thermal conductivity relative to those of the crucible, the heat sink and the thermal reflector. The thermal reflector reflects thermal radiation in the chamber and communicates with the heat-insulator and the chamber via the pores in the thermal reflector.

Abstract: A crucible is used for allowing a seed crystal to grow via the source of materials. The crucible includes a growth chamber, a holder, a reflecting device, and a plurality of gas guiding devices. The holder is located on the top of the crystal growth chamber for holding the seed. The reflecting device is located around the holder. The plurality of gas guiding devices is located on the bottom of the growth chamber, for containing the material source and guiding the gasification or vaporization of the material source.