Abstract: A ceramic electronic component comprises a ceramic element body and an outer electrode arranged on the ceramic element body. The outer electrode includes a first electrode layer and a second electrode layer formed on the first electrode layer. The first electrode layer is formed on an outer surface of the ceramic element body and contains Ag and a glass material. The second electrode layer contains Pt and has a plurality of holes reaching the first electrode layer at respective locations.

Abstract: As for the voltage non-linear resistance element layer 2, sintered body (ceramics) having ZnO as main component is used. Said sintered body comprises Pr, Co, Ca and Na are added. Therefore, the ranges are 0.05 to 5.0 atm % of Pr, 0.1 to 20 atm % of Co, 0.01 to 5.0 atm % of Ca and 0.0001 to 0.0008 atm % of Na. When it is within the range, the capacitance changing rate at 85° C. with standard being 25° C. can be made to equal or less than 10%.

Abstract: As for the voltage non-linear resistance element layer 2, a sintered body having ZnO as a main component is used. In this sintered body, Pr, Co, Ca, and either Cu or Ni are added. The ranges are; 0.05 to 5.0 atm % of Pr, 0.1 to 20 atm % of Co, 0.01 to 5.0 atm % of Ca, and 0.0005 to 0.05 atm % of either Cu or Ni. Within these ranges, the capacitance changing rate can be made to equal or less than 10 % at 85° C. when 25° C. is taken as standard.

Abstract: In a varistor element, Ca exists in the grain interior of grains consisting primarily of ZnO in a varistor element body and Ca also exists in a grain boundary. In this crystal structure Ca replaces oxygen defects in the grain interior of grains consisting primarily of ZnO, in the varistor element body to make the ceramic structure denser Such crystal structure also decreases a ratio of an element tending to degrade the stability of the temperature characteristic of the varistor element, e.g., Si as a firing aid, in the grain boundary between grains. As a result, the varistor element has a stable temperature characteristic, which can decrease change in capacitance and tan? (thermal conversion factor of resistance) against change in temperature.

Abstract: A surge absorber has a first terminal electrode, a second terminal electrode, a third terminal electrode, an inductor portion, a surge absorbing portion, and a resistor portion. The inductor portion has a first internal conductor and a second internal conductor mutually coupled in a polarity-reversed relation. One end of the first internal conductor is connected to the first terminal electrode. One end of the second internal conductor is connected to the second terminal electrode. The other end of the first internal conductor is connected to the other end of the second internal conductor. The surge absorbing portion has a first internal electrode and a second internal electrode. The first internal electrode is connected to the other end of the first internal conductor and to the other end of the second internal conductor. The second internal electrode is connected to the third terminal electrode.

Abstract: A filter circuit has first and second varistors, a resistance, an input terminal, an output terminal, and a ground terminal. The resistance is connected between the first and second varistors. The input terminal is connected to a junction between the first varistor and resistance through a first coil. The output terminal is connected to a junction between the second varistor and resistance through a second coil. The ground terminal is connected to a side of the first varistor opposite from the resistance and a side of the second varistor opposite from the resistance.

Abstract: A varistor element comprises a varistor element body, a plurality of inner electrode pairs, a connecting conductor, and a plurality of terminal electrodes. The varistor element body has first and second main faces opposing each other. Each inner electrode pair has first and second inner electrodes. The first and second inner electrodes are arranged so as to oppose each other at least partly within the varistor element body. The connecting conductor is arranged on the first main face so as to electrically connect the first inner electrodes in a predetermined inner electrode pair in the plurality of inner electrode pairs to each other. The terminal electrodes are provided so as to correspond to the second inner electrodes in the plurality of inner electrode pairs, and are arranged on the second main face so as to electrically connect with the second inner electrodes.

Abstract: A varistor is provided with a varistor element, and an external electrode disposed on the varistor element. The varistor element contains ZnO as a principal ingredient and contains a rare-earth element and Ca. The external electrode is formed by baking on an outer surface of the varistor element and contains Pt. When the external electrode is formed by baking on the varistor element, a compound of the rare-earth element and Pt and a compound of Ca and Pt are formed near an interface between the varistor element and the external electrode, and exist there. The existence of these compounds enhances the bonding strength between the varistor element and the external electrode.

Abstract: A surge absorber has a first terminal electrode, a second terminal electrode, a third terminal electrode, an inductor portion, a surge absorbing portion, and a resistor portion. The inductor portion has a first internal conductor and a second internal conductor mutually coupled in a polarity-reversed relation. One end of the first internal conductor is connected to the first terminal electrode. One end of the second internal conductor is connected to the second terminal electrode. The other end of the first internal conductor is connected to the other end of the second internal conductor. The surge absorbing portion has a first internal electrode and a second internal electrode. The first internal electrode is connected to the other end of the first internal conductor and to the other end of the second internal conductor. The second internal electrode is connected to the third terminal electrode.

Abstract: An object of the present invention is to provide a small surge absorption element that exhibits superior impedance matching even for high-speed signals and a surge absorption circuit. The surge absorption element comprises first and second inductor sections and first and second surge absorption sections. The first inductor section comprises first and second coils and the second inductor section comprises third and fourth coils. By suitably setting the coupling coefficients between the respective coils and the induction coefficients of the first to fourth coils, image impedance with an even frequency characteristic can be implemented over a wide area. Further, because the first to fourth coils have a positive magnetically coupled state with respect to one another, the induction coefficients of the first to fourth coils can be reduced in comparison with a case where the first to fourth coils are not afforded a positive magnetically coupled state.

Abstract: A multilayer chip varistor comprises a multilayer body and a pair of external electrodes formed on the multilayer body. The multilayer body has a varistor section and a pair of outer layer sections disposed so as to interpose said varistor section. The varistor section comprises a varistor layer developing a voltage nonlinear characteristic and a pair of internal electrodes disposed so as to interpose the varistor layer. The pair of external electrodes are connected to respective electrodes of the pair of internal electrodes. The relative dielectric constant of the outer layer sections is set lower than the relative dielectric constant of the region where the pair of internal electrodes in the varistor layer overlap each other.

Abstract: A surge absorber has a first terminal electrode, a second terminal electrode, a third terminal electrode, an inductor portion, a surge absorbing portion, and a capacitor portion. The inductor portion has a first internal conductor and a second internal conductor mutually coupled in a polarity-reversed relation. One end of the first internal conductor is connected to the first terminal electrode. One end of the second internal conductor is connected to the second terminal electrode. The other end of the first internal conductor is connected to the other end of the second internal conductor. The surge absorbing portion has a first internal electrode connected to a connection point between the first internal conductor and the second internal conductor, and a second internal electrode connected to the third terminal electrode. The capacitor portion has a capacitance component connected between the first terminal electrode and the second terminal electrode.

Abstract: An object of the present invention is to provide a multilayer filter constructed so as to be less likely to suffer peeling between a varistor part and an inductor part. A multilayer filter 10 as a preferred embodiment has a structure in which a varistor part 20 and an inductor part are stacked. The varistor part 30 consists of a stack of varistor layers 31, 32 with internal electrodes 31a, 32a, and the varistor layers contain ZnO as a principal component, and contain at least one element selected from the group consisting of Pr and Bi, Co, and Al as additives. The inductor part 20 consists of a stack of inductor layers 21-24 with conductor patterns 21a-24a, and the inductor layers contain ZnO as a principal component and substantially contain neither Co nor Al.

Abstract: A multilayer chip varistor comprises a multilayer body in which a plurality of varistor portions are arranged along a predetermined direction, and a plurality of terminal electrodes. Each varistor portion has a varistor layer to exhibit nonlinear voltage-current characteristics, and a plurality of internal electrodes disposed so as to interpose the varistor layer between them. Each terminal electrode is disposed on a first outer surface parallel to the predetermined direction out of outer surfaces of the multilayer body and is electrically connected to a corresponding internal electrode out of the plurality of internal electrodes. Each of the plurality of internal electrodes includes a first electrode portion overlapping with another first electrode portion between adjacent internal electrodes out of the plurality of internal electrodes, and a second electrode portion led from the first electrode portion so as to be exposed in the first outer surface.

Abstract: A light emitting device has a semiconductor light emitting element and a multilayer chip varistor. The multilayer chip varistor has a multilayer body with a varistor portion therein, and a plurality of external electrodes disposed on an outer surface of the multilayer body. The varistor portion has a varistor layer containing ZnO as a principal component and exhibiting nonlinear voltage-current characteristics, and a plurality of internal electrodes arranged to interpose the varistor layer between them. Each of the external electrodes is connected to a corresponding internal electrode out of the plurality of internal electrodes. The semiconductor light emitting element is disposed on the multilayer chip varistor. The semiconductor light emitting element is connected to corresponding external electrodes out of the plurality of external electrodes so as to be connected in parallel to the varistor portion.

Abstract: A varistor has a varistor element body, and an external electrode disposed on the varistor element body. The varistor element body contains ZnO as a principal component, and a rare-earth metal. The external electrode has an electrode layer. The electrode layer is formed on an external surface of the varistor element body by simultaneous firing with the varistor element body. The electrode layer contains Pd.

Abstract: A multilayer chip varistor comprises a multilayer body and a pair of external electrodes formed on the multilayer body. The multilayer body has a varistor section and a pair of outer layer sections disposed so as to interpose said varistor section. The varistor section comprises a varistor layer developing a voltage nonlinear characteristic and a pair of internal electrodes disposed so as to interpose the varistor layer. The pair of external electrodes are connected to respective electrodes of the pair of internal electrodes. The relative dielectric constant of the outer layer sections is set lower than the relative dielectric constant of the region where the pair of internal electrodes in the varistor layer overlap each other.

Abstract: A chip shaped electronic device comprising an element body including zinc oxide material layers and internal electrode layers, wherein when assuming a minimum distance from an outermost side of the internal electrode layer in the stacking direction to a surface of the element body is 1 and measuring an ion intensity ratio of Li and Zn, (Li/Zn), in a range from the surface of the element body to a depth of (0.9×1) by a secondary ion mass spectrometry (SIMS), 0.001≦(Li/Zn)≦500. According to the invention, it is possible to provide a chip shaped electronic device, such as a multilayer chip varistor, not requiring glass coating or other insulative protective layer, being tolerant of temperature changes, capable of maintaining high resistance of an element surface even by reflow soldering, being highly reliable, and capable of being easily produced, and a method of producing the same.

Abstract: A chip shaped electronic device comprising an element body including zinc oxide material layers and internal electrode layers, wherein when assuming a minimum distance from an outermost side of the internal electrode layer in the stacking direction to a surface of the element body is 1 and measuring an ion intensity ratio of Li and Zn, (Li/Zn), in a range from the surface of the element body to a depth of (0.9×1) by a secondary ion mass spectrometry (SIMS), 0.001≦(Li/Zn)≦500. According to the invention, it is possible to provide a chip shaped electronic device, such as a multilayer chip varistor, not requiring glass coating or other insulative protective layer, being tolerant of temperature changes, capable of maintaining high resistance of an element surface even by reflow soldering, being highly reliable, and capable of being easily produced, and a method of producing the same.

Abstract: An electron-emitting electrode for discharge lamps etc. uses an electron-emitting material which contains a first metal component selected from Ba, Sr and Ca and a second metal component selected from Ta, Zr, Nb, Ti and Hf and also contains oxynitride perovskite. The electron-emitting material has restrained evaporation during electric discharge and a high resistance to ion sputtering.