Patents by Inventor Dai-sik Moon

Dai-sik Moon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods for performing plasma etching operations on microelectronic structures
    Patent number: 5900163
    Abstract: A method for etching a layer of a microelectronic structure includes the steps of masking the layer to be etched so that predetermined portions of the layer are exposed, and providing an etching gas. An additional gas is also provided wherein the additional gas generates a compound having a carbene structure when exposed to a plasma discharge. A plasma of the etching gas and the additional gas is generated to thereby etch the exposed portions of the layer and to form the compound having a carbene structure. A polymer can thus be formed from the compound having the carbene structure on the sidewalls of the etched portions of the layer. Accordingly, the profile of the etched layer can be improved.
    Type: Grant
    Filed: January 16, 1997
    Date of Patent: May 4, 1999
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Whi-kun Yi, Dai-sik Moon, Sung-kyeong Kim, Kyung-hoon Kim, Gyu-hwan Kwag