Abstract: A carrier for a double-side polishing apparatus configured to double-side polish providing a semiconductor silicon wafer. The carrier being disposed between upper and lower turn tables have a polishing pad attached, and includes a holding hole formed to hold the semiconductor silicon wafer between the upper and lower turn tables during polishing. The carrier for a double-side polishing apparatus is made of a resin. An average contact angle with pure water of front and back surfaces of the carrier, which come into contact with the polishing pads, is 45° or more and 60° or less, and a difference in average contact angles between the front surface and the back surface is 5° or less, which provides a carrier for a double-side polishing apparatus capable of enhancing the polishing rate for a semiconductor silicon wafer by using a resinous carrier; and a double-side polishing apparatus and method which employ the carrier.

Abstract: A method for double-side polishing a wafer uses a double-side polishing machine wherein a carrier which is yet to be arranged in the double-side polishing machine is previously subjected to two-stage double-side polishing which uses a double-side polishing machine different from the double-side polishing machine adopted for double-side polishing the wafer and includes primary polishing using slurry containing abrasive grains and secondary polishing using an inorganic alkali solution containing no abrasive grain, the carrier subjected to the two-stage double-side polishing is arranged in the double-side polishing machine adopted for double-side polishing the wafer, and the double-side polishing of the wafer is performed. Consequently, the method for double-side polishing a wafer enables suppressing damages to wafers to be polished immediately after arranging the carrier between the upper and lower turntables.

Abstract: A manufacturing method of a carrier for a double-side polishing apparatus, including: preparing a carrier base material and insert thicker than the carrier base material, inserting the insert into a holding hole so as to protrude the insert from both sides of the front surface and back surface of the carrier base material, measuring each of a front protruding amount of the insert protruded from front surface of the carrier base material and a back protruding amount of the insert protruded from back surface of the carrier base material, setting each rotational speed of the upper turn table and lower turn table in starting-up polishing of the carrier so as to decrease the difference between the front protruding amount and back protruding amount, and a starting-up polishing step to subject the carrier to starting-up polishing at each set rotational speed of the upper turn table and the lower turn table.

Abstract: A carrier for a double-side polishing apparatus configured to double-side polish providing a semiconductor silicon wafer. The carrier being disposed between upper and lower turn tables have a polishing pad attached, and includes a holding hole formed to hold the semiconductor silicon wafer between the upper and lower turn tables during polishing. The carrier for a double-side polishing apparatus is made of a resin. An average contact angle with pure water of front and back surfaces of the carrier, which come into contact with the polishing pads, is 45° or more and 60° or less, and a difference in average contact angles between the front surface and the back surface is 5° or less, which provides a carrier for a double-side polishing apparatus capable of enhancing the polishing rate for a semiconductor silicon wafer by using a resinous carrier; and a double-side polishing apparatus and method which employ the carrier.

Abstract: A manufacturing method of a carrier for a double-side polishing apparatus, including: preparing a carrier base material and insert thicker than the carrier base material, inserting the insert into a holding hole so as to protrude the insert from both sides of the front surface and back surface of the carrier base material, measuring each of a front protruding amount of the insert protruded from front surface of the carrier base material and a back protruding amount of the insert protruded from back surface of the carrier base material, setting each rotational speed of the upper turn table and lower turn table in starting-up polishing of the carrier so as to decrease the difference between the front protruding amount and back protruding amount, and a starting-up polishing step to subject the carrier to starting-up polishing at each set rotational speed of the upper turn table and the lower turn table.

Abstract: A method for double-side polishing a wafer uses a double-side polishing machine wherein a carrier which is yet to be arranged in the double-side polishing machine is previously subjected to two-stage double-side polishing which uses a double-side polishing machine different from the double-side polishing machine adopted for double-side polishing the wafer and includes primary polishing using slurry containing abrasive grains and secondary polishing using an inorganic alkali solution containing no abrasive grain, the carrier subjected to the two-stage double-side polishing is arranged in the double-side polishing machine adopted for double-side polishing the wafer, and the double-side polishing of the wafer is performed. Consequently, the method for double-side polishing a wafer enables suppressing damages to wafers to be polished immediately after arranging the carrier between the upper and lower turntables.