Abstract: The present embodiment relates to an electron multiplier having a structure configured to suppress and stabilize a variation of a resistance value in a wider temperature range. The electron multiplier includes a resistance layer sandwiched between a substrate and a secondary electron emitting layer and configured using a Pt layer two-dimensionally formed on a layer formation surface which is coincident with or substantially parallel to a channel formation surface of the substrate. The resistance layer has a temperature characteristic within a range in which a resistance value at ?60° C. is 10 times or less, and a resistance value at +60° C. is 0.25 times or more, relative to a resistance value at a temperature of 20° C.

Abstract: The present embodiment relates to an electron multiplier having a structure configured to suppress and stabilize a variation of a resistance value in a wider temperature range. In the electron multiplier, a resistance layer sandwiched between a substrate and a secondary electron emitting layer formed of an insulating material includes a metal layer in which a plurality of metal particles formed of a metal material whose resistance value has a positive temperature characteristic are two-dimensionally arranged on a layer formation surface, which is coincident with or substantially parallel to a channel formation surface of the substrate, in the state of being adjacent to each other with a part of the first insulating material interposed therebetween, the metal layer having a thickness set to 5 to 40 angstroms.

Abstract: The present embodiment relates to an electron multiplier having a structure configured to suppress and stabilize a variation of a resistance value in a wider temperature range. The electron multiplier includes a resistance layer sandwiched between a substrate and a secondary electron emitting layer and configured using a Pt layer two-dimensionally formed on a layer formation surface which is coincident with or substantially parallel to a channel formation surface of the substrate. The resistance layer has a temperature characteristic within a range in which a resistance value at ?60° C. is 10 times or less, and a resistance value at +60° C. is 0.25 times or more, relative to a resistance value at a temperature of 20° C.

Abstract: The present embodiment relates to an electron multiplier having a structure configured to suppress and stabilize a variation of a resistance value in a wider temperature range. In the electron multiplier, a resistance layer sandwiched between a substrate and a secondary electron emitting layer comprised of an insulating material includes a metal layer in which a plurality of metal particles comprised of a metal material whose resistance value has a positive temperature characteristic are two-dimensionally arranged on a layer formation surface, which is coincident with or substantially parallel to a channel formation surface of the substrate, in the state of being adjacent to each other with a part of the first insulating material interposed therebetween, the metal layer having a thickness set to 5 to 40 angstroms.

Abstract: A microchannel plate is provided with a substrate including a front surface, a rear surface, and a side surface, a plurality of channels penetrating from the front surface to the rear surface of the substrate, a first film provided on at least an inner wall surface of the channel, a second film provided on at least a part of the first film, and electrode layers provided on the front surface and the rear surface of the substrate. The first film is made of MgO, the second film is made of SiO2, and the second film is thinner than the first film.

Abstract: The present embodiment relates to an electron multiplier having a structure configured to suppress and stabilize a variation of a resistance value in a wider temperature range. In the electron multiplier, a resistance layer sandwiched between a substrate and a secondary electron emitting layer comprised of an insulating material is configured using a single metal layer in which a plurality of metal particles comprised of a metal material whose resistance value has a positive temperature characteristic are two-dimensionally arranged on a layer formation surface, which is coincident with or substantially parallel to a channel formation surface of the substrate, in the state of being adjacent to each other with a part of the first insulating material interposed therebetween.

Abstract: The present embodiment relates to an electron multiplier having a structure configured to suppress and stabilize a variation of a resistance value in a wider temperature range. In the electron multiplier, a resistance layer sandwiched between a substrate and a secondary electron emitting layer comprised of an insulating material is configured using a single metal layer in which a plurality of metal particles comprised of a metal material whose resistance value has a positive temperature characteristic are two-dimensionally arranged on a layer formation surface, which is coincident with or substantially parallel to a channel formation surface of the substrate, in the state of being adjacent to each other with a part of the first insulating material interposed therebetween.

Abstract: A microchannel plate is provided with a substrate including a front surface, a rear surface, and a side surface, a plurality of channels penetrating from the front surface to the rear surface of the substrate, a first film provided on at least an inner wall surface of the channel, a second film provided on at least a part of the first film, and electrode layers provided on the front surface and the rear surface of the substrate. The first film is made of MgO, the second film is made of SiO2, and the second film is thinner than the first film.