Patents by Inventor Daichi OTORI

Daichi OTORI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240088064
    Abstract: Provided is a semiconductor device with improved humidity resistance in which deformation of a substrate and a casing caused by expansion and contraction of a sealant cured in manufacturing processes is reduced. The semiconductor device includes: an insulating substrate; first and second circuit patterns formed on one surface of the insulating substrate; a first terminal electrode electrically connected to the first circuit pattern; first and second semiconductor elements mounted on the first circuit pattern; a second terminal electrode electrically connected to the first and second semiconductor elements through the second circuit pattern; a first sealant covering the first semiconductor element; a second sealant covering the second semiconductor element and made of a material different from that of the first sealant; and a casing enclosing the first and second semiconductor elements, separated from the first and second semiconductor elements, and bonded to the insulating substrate.
    Type: Application
    Filed: July 3, 2023
    Publication date: March 14, 2024
    Applicant: Mitsubishi Electric Corporation
    Inventor: Daichi OTORI
  • Patent number: 10847437
    Abstract: An object is to provide a technique capable of increasing a heat radiation property in radiating a heat generated in a shunt resistance. A semiconductor device includes: a container body having a space with an opening; a semiconductor chip, a shunt resistance, and a circuit pattern disposed in the space in the container body; a partition member; a first cover; and a second cover. The partition member separates the space in the container body into a first space and a second space. The first cover covers a part of the opening corresponding to the first space, and the second cover covers a part of the opening corresponding to the second space. At least one hole through which the second space and outside of the container body are communicated with each other is formed in the second cover or by the second cover.
    Type: Grant
    Filed: June 25, 2019
    Date of Patent: November 24, 2020
    Assignee: Mitsubishi Electric Corporation
    Inventor: Daichi Otori
  • Publication number: 20200118903
    Abstract: An object is to provide a technique capable of increasing a heat radiation property in radiating a heat generated in a shunt resistance. A semiconductor device includes: a container body having a space with an opening; a semiconductor chip, a shunt resistance, and a circuit pattern disposed in the space in the container body; a partition member; a first cover; and a second cover. The partition member separates the space in the container body into a first space and a second space. The first cover covers a part of the opening corresponding to the first space, and the second cover covers a part of the opening corresponding to the second space. At least one hole through which the second space and outside of the container body are communicated with each other is formed in the second cover or by the second cover.
    Type: Application
    Filed: June 25, 2019
    Publication date: April 16, 2020
    Applicant: Mitsubishi Electric Corporation
    Inventor: Daichi OTORI