Abstract: An apparatus includes a semiconductor layer including a conversion unit and a diffusion unit, and a plurality of wiring layers including a first wiring layer. The semiconductor layer includes a transfer transistor configured to send a signal based on a charge generated by the conversion unit to the diffusion unit, and an amplification transistor including a gate connected to the diffusion unit. The first wiring layer includes a control line configured to send a signal to drive the transfer transistor to a gate of the transfer transistor, a wire connecting the diffusion unit and the gate of the amplification transistor, and a first shield wire connected to a source or a drain of the amplification transistor and provided between the wire and the control line in a planar view.

Abstract: A photoelectric conversion device includes a substrate, a photoelectric conversion unit configured to generate charges corresponding to incident light, a floating diffusion portion to which the charges generated by the photoelectric conversion unit are transferred, and a transistor arranged in the substrate, the transistor having a plurality of main electrodes and a gate connected to the floating diffusion portion, the transistor being configured to output a signal corresponding to a potential of the floating diffusion portion from at least one of the plurality of main electrodes. In a plan view with respect to the substrate, the gate has four or more sides. In the plan view, the plurality of main electrodes is adjacent to three or more sides of the gate.

Abstract: A light emitting device has a structure in which a first substrate and a second substrate are stacked. The device includes a plurality of light emitting elements, and a driving circuit configured to drive the plurality of light emitting elements. Part of the driving circuit is arranged in the first substrate, and another part of the driving circuit is arranged in the second substrate.

Abstract: A substrate including a first surface and a second surface, a first region of a first conductivity type disposed at a first depth, a second region of the first conductivity type disposed at the first depth and separated from the first region, a third region of the first conductivity type disposed at a second depth shallower than the first depth, a first gate, a second gate, a third gate, and a microlens disposed such that transmitted light is incident on the first region, the second region, and the third region. Signal charges accumulated in the first region are read out through the third region and an impurity concentration of each of the first region and the second region is lower than an impurity concentration of the third region.

Abstract: A photoelectric conversion apparatus is provided. The apparatus comprises a photoelectric conversion portion including a first region of a first conductivity type arranged on the side of a front surface of a substrate, a floating diffusion of the first conductivity type to which charges generated in the photoelectric conversion portion are transferred, and a charge transfer portion arranged between the photoelectric conversion portion and the floating diffusion, a transfer gate electrode arranged on the charge transfer portion and a potential control electrode arranged on the photoelectric conversion portion to control a potential in the first region. The potential control electrode is arranged spaced apart from the transfer gate electrode, and a voltage set in a direction in which the potential will increase with respect to the charges is applied to the potential control electrode when charges are to be transferred.

Abstract: A photoelectric conversion apparatus in one aspect of the present disclosure includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type, a third semiconductor region of the first conductivity type, a fourth semiconductor region of a second conductivity type in which a distance from a first surface being greater than a distance from the substrate to the third semiconductor region, a first isolation portion disposed between the first semiconductor region and the second semiconductor region, a microlens commonly disposed in the first semiconductor region and the second semiconductor region, and a fifth semiconductor region of the second conductivity type disposed between the first isolation portion and the fourth semiconductor region. The third semiconductor region is disposed between the fourth semiconductor region and the fifth semiconductor region.

Abstract: A substrate including a first surface and a second surface, a first region of a first conductivity type disposed at a first depth, a second region of the first conductivity type disposed at the first depth and separated from the first region, a third region of the first conductivity type disposed at a second depth shallower than the first depth, a first gate, a second gate, a third gate, and a microlens disposed such that transmitted light is incident on the first region, the second region, and the third region. Signal charges accumulated in the first region are read out through the third region and an impurity concentration of each of the first region and the second region is lower than an impurity concentration of the third region.

Abstract: Photoelectric conversion apparatus includes semiconductor layer having photoelectric converters in light-receiving region and photoelectric converters in light-shielded region, light-shielding part arranged above the semiconductor layer in the light-receiving region to surround light paths of the photoelectric converters in the light-receiving region, and light-shielding film arranged above the semiconductor layer in the light-shielded region to cover the photoelectric converters in the light-shielded region. The light-shielding part includes lower and upper ends. The light-shielding film includes lower and upper surfaces. Distance between the upper end and the semiconductor layer is larger than that between the upper surface and the semiconductor layer. Distance between the lower end and the semiconductor layer is smaller than that between the upper surface and the semiconductor layer and is larger than that between the lower surface and the semiconductor layer.

Abstract: An image capturing device is provided. The device comprises a photodiode including a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type, a third semiconductor region of the second conductivity type, an insulator arranged between the photodiode and the third semiconductor region and a channel stop region of the first conductivity type which covers a side and a bottom surface of the insulator. The channel stop region includes a fourth semiconductor region arranged between the insulator and the second semiconductor region and a fifth semiconductor region arranged between the insulator and the third semiconductor region. An impurity concentration in the fourth semiconductor region is higher than an impurity concentration in the fifth semiconductor region and the impurity concentration in the fifth semiconductor region is not less than an impurity concentration in the first semiconductor region.

Abstract: According to one aspect of the invention, provided is a solid state imaging device having a pixel including a photoelectric conversion portion provided in a semiconductor substrate. The photoelectric conversion portion includes first and second charge accumulation region of a first conductivity type provided at a first depth of the semiconductor substrate and spaced apart from each other by a first gap, and first and second semiconductor region of a second conductivity type provided at a second depth located under the first depth of the semiconductor substrate and extend over the first charge accumulation region, the first gap, and the second charge accumulation region in a planar view. At the second depth, an impurity concentration of the second conductivity type in a region under the first gap is higher than an impurity concentration of the second conductivity type in a region under the first and second charge accumulation regions.

Abstract: A photoelectric conversion apparatus in one aspect of the present disclosure includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type, a third semiconductor region of the first conductivity type, a fourth semiconductor region of a second conductivity type in which a distance from a first surface being greater than a distance from the substrate to the third semiconductor region, a first isolation portion disposed between the first semiconductor region and the second semiconductor region, a microlens commonly disposed in the first semiconductor region and the second semiconductor region, and a fifth semiconductor region of the second conductivity type disposed between the first isolation portion and the fourth semiconductor region. The third semiconductor region is disposed between the fourth semiconductor region and the fifth semiconductor region.

Abstract: A photoelectric conversion apparatus is provided. The apparatus comprises a photoelectric conversion portion including a first region of a first conductivity type arranged on the side of a front surface of a substrate, a floating diffusion of the first conductivity type to which charges generated in the photoelectric conversion portion are transferred, and a charge transfer portion arranged between the photoelectric conversion portion and the floating diffusion, a transfer gate electrode arranged on the charge transfer portion and a potential control electrode arranged on the photoelectric conversion portion to control a potential in the first region. The potential control electrode is arranged spaced apart from the transfer gate electrode, and a voltage set in a direction in which the potential will increase with respect to the charges is applied to the potential control electrode when charges are to be transferred.

Abstract: Photoelectric conversion apparatus includes semiconductor layer having photoelectric converters in light-receiving region and photoelectric converters in light-shielded region, light-shielding part arranged above the semiconductor layer in the light-receiving region to surround light paths of the photoelectric converters in the light-receiving region, and light-shielding film arranged above the semiconductor layer in the light-shielded region to cover the photoelectric converters in the light-shielded region. The light-shielding part includes lower and upper ends. The light-shielding film includes lower and upper surfaces. Distance between the upper end and the semiconductor layer is larger than that between the upper surface and the semiconductor layer. Distance between the lower end and the semiconductor layer is smaller than that between the upper surface and the semiconductor layer and is larger than that between the lower surface and the semiconductor layer.

Abstract: A method of manufacturing an imaging device, including a first buried diode including a first semiconductor region and a second semiconductor region and a second buried diode including a third semiconductor region and a fourth semiconductor region, includes implanting first impurity ions of a first conductivity type into a first region and a third region between the first region and a second region, and implanting second impurity ions of the first conductivity type into the second region and the third region, wherein the first semiconductor region is formed by implanting the first impurity ions, the third semiconductor region is formed by implanting the second impurity ions, and a fifth semiconductor region having a higher impurity concentration than the first and the second semiconductor regions is formed in the third region by implanting the first and second impurity ions.

Abstract: An image capturing device is provided. The device comprises a photodiode including a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type, a third semiconductor region of the second conductivity type, an insulator arranged between the photodiode and the third semiconductor region and a channel stop region of the first conductivity type which covers a side and a bottom surface of the insulator. The channel stop region includes a fourth semiconductor region arranged between the insulator and the second semiconductor region and a fifth semiconductor region arranged between the insulator and the third semiconductor region. An impurity concentration in the fourth semiconductor region is higher than an impurity concentration in the fifth semiconductor region and the impurity concentration in the fifth semiconductor region is not less than an impurity concentration in the first semiconductor region.

Abstract: A method of manufacturing an imaging device, including a first buried diode including a first semiconductor region and a second semiconductor region and a second buried diode including a third semiconductor region and a fourth semiconductor region, includes implanting first impurity ions of a first conductivity type into a first region and a third region between the first region and a second region, and implanting second impurity ions of the first conductivity type into the second region and the third region, wherein the first semiconductor region is formed by implanting the first impurity ions, the third semiconductor region is formed by implanting the second impurity ions, and a fifth semiconductor region having a higher impurity concentration than the first and the second semiconductor regions is formed in the third region by implanting the first and second impurity ions.

Abstract: According to one aspect of the invention, provided is a solid state imaging device having a pixel including a photoelectric conversion portion provided in a semiconductor substrate. The photoelectric conversion portion includes first and second charge accumulation region of a first conductivity type provided at a first depth of the semiconductor substrate and spaced apart from each other by a first gap, and first and second semiconductor region of a second conductivity type provided at a second depth located under the first depth of the semiconductor substrate and extend over the first charge accumulation region, the first gap, and the second charge accumulation region in a planar view. At the second depth, an impurity concentration of the second conductivity type in a region under the first gap is higher than an impurity concentration of the second conductivity type in a region under the first and second charge accumulation regions.