Abstract: A resist composition including: a base material component (A), a compound (B1) represented by Formula (b1-1), and a fluorine additive component (F) which contains a fluororesin component (F1) having a constitutional unit (f1) represented by Formula (f-1) and a constitutional unit (f2) represented by Formula (f-2); in Formula (b1-1), Vb01 represents a fluorinated alkylene group, Rb02 represents a fluorine atom or a hydrogen atom, a total number of fluorine atoms as Vb01 and Rb02 is 2 or 3; in Formula (f-1), Rf1 represents a monovalent organic group having a fluorine atom; in Formula (f-2), Rf2 represents a group represented by Formula (f2-r-1), which is a group containing a polycyclic aliphatic cyclic group.

Abstract: A resist composition containing an organic resin component having a constitutional unit represented by General Formula (a0-1) and an acid generator component containing a compound represented by General Formula (b1-1), Ra00 represents an acid dissociable group represented by General Formula (a0-r1-1); Ra01 and Ra02 represent a hydrocarbon group; one of Ra031, Ra032, and Ra033 represents a hydrocarbon group having an ether bond; Rb01 represents a polycyclic hydrocarbon group having a hydroxy group; Yb01 represents a divalent linking group containing an oxygen atom; Vb01 represents a fluorinated alkylene group or the like; Rb02 represents a fluorine atom; and Mm+ represents an m-valent organic cation

Abstract: A resist composition including: a base material component (A), a compound (B1) represented by Formula (b1-1), and a fluorine additive component (F) which contains a fluororesin component (F1) having a constitutional unit (f1) represented by Formula (f-1) and a constitutional unit (f2) represented by Formula (f-2); in Formula (b1-1), Vb01 represents a fluorinated alkylene group, Rb02 represents a fluorine atom or a hydrogen atom, a total number of fluorine atoms as Vb01 and Rb02 is 2 or 3; in Formula (f-1), Rf1 represents a monovalent organic group having a fluorine atom; in Formula (f-2), Rf2 represents a group represented by Formula (f2-r-1), which is a group containing a polycyclic aliphatic cyclic group.

Abstract: A resist composition including a base material component (A), a compound (BD1) formed of an anion moiety and a cation moiety which is represented by Formula (bd1), and a fluorine additive (F) which includes a fluororesin component (F1) having a constitutional unit (f1) represented by Formula (f-1) and a constitutional unit (f2) represented by Formula (f-2); in Formula (bd1), Rbd1 represents an aryl group containing at least one polycyclic hydrocarbon group as a substituent, and Rbd2 and Rbd3 represent an aryl group or the like; in Formula (f-1), Rf1 represents a monovalent organic group having a fluorine atom; in Formula (f-2), Rf2 represents a group represented by Formula (f2-r-1), which is a group containing a polycyclic aliphatic cyclic group.

Abstract: A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, the resist composition including a base component which exhibits changed solubility in a developing solution under action of acid, and a compound represented by general formula (d1) in which Rd01 and Rd02 each independently represents a cyclic group which may have a substituent, a chain alkyl group which may have a substituent or a chain alkenyl group which may have a substituent; or Rd01 and Rd02 may be mutually bonded to form a condensed ring; m represents an integer of 1 or more; and Mm+ represents an organic cation having a valency of m.

Abstract: A resist composition which generates an acid upon exposure, and whose solubility in a developing solution is changed due to an action of the acid, the resist composition including a base material component whose solubility in the developing solution is changed due to the action of the acid, and an acid generator component which generates the acid upon exposure, in which the acid generator component contains two kinds of compounds.

Abstract: A method of recovering a defect portion of a resist pattern formed on a substrate including applying a shrinking agent composition so as to cover the resist pattern having the defect portion; forming a developing solution-insoluble region on the surface of the resist pattern; and developing the covered resist pattern, the shrinking agent composition including a polymeric compound (X) which is a homopolymer or a random copolymer.

Abstract: A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, the resist composition including a base component which exhibits changed solubility in a developing solution under action of acid, and a compound represented by general formula (d1) in which Rd01 and Rd02 each independently represents a cyclic group which may have a substituent, a chain alkyl group which may have a substituent or a chain alkenyl group which may have a substituent; or Rd01 and Rd02 may be mutually bonded to form a condensed ring; m represents an integer of 1 or more; and Mm+ represents an organic cation having a valency of m.

Abstract: A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, and which includes a base component (A) which exhibits changed solubility in a developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the acid-generator component (B) including a compound (B0-1) represented by general formula (b0) shown below (in the formula, Yx01 represents a divalent linking group; n represents an integer of 1 to 3; and M?m+ represents an organic cation having a valency of m.

Abstract: A resist composition which generates an acid upon exposure and whose solubility in a developing solution changes under the action of an acid. The composition includes a base material component whose solubility in a developing solution changes under the action of an acid; an acid generator component which generates an acid upon exposure; and a photo-reactive quencher which contains a compound represented by the general formula shown below: in which Ra1 represents an alkyl group having 1 to 10 carbon atoms which may have a substituent; and Ra2 and Ra3 each independently represent an alkyl group having 1 to 10 carbon atoms which may have a substituent. X? represents a counter anion.

Abstract: A method of forming a resist pattern including forming a resist film on a substrate using a resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of the acid; exposing the resist film; and patterning the exposed resist film by negative-tone development using a developing solution containing an organic solvent, to form a resist pattern. The resist composition includes a polymeric compound having at least two kinds of specific structural units.

Abstract: A resist composition which generates an acid upon exposure and whose solubility in a developing solution changes under the action of an acid. The composition includes a base material component whose solubility in a developing solution changes under the action of an acid; an acid generator component which generates an acid upon exposure; and a photo-reactive quencher which contains a compound represented by the general formula shown below: in which Ra1 represents an alkyl group having 1 to 10 carbon atoms which may have a substituent; and Ra2 and Ra3 each independently represent an alkyl group having 1 to 10 carbon atoms which may have a substituent. X? represents a counter anion.

Abstract: A method of recovering a defect portion of a resist pattern formed on a substrate including applying a shrinking agent composition so as to cover the resist pattern having the defect portion; forming a developing solution-insoluble region on the surface of the resist pattern; and developing the covered resist pattern, the shrinking agent composition including a polymeric compound (X) which is a homopolymer or a random copolymer.

Abstract: A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, and which includes a base component (A) which exhibits changed solubility in a developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the acid-generator component (B) including a compound (B0-1) represented by general formula (b0) shown below (in the formula, Yx01 represents a divalent linking group; n represents an integer of 1 to 3; and M?m+ represents an organic cation having a valency of m.

Abstract: A method of forming a resist pattern including forming a resist film on a substrate using a resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of the acid; exposing the resist film; and patterning the exposed resist film by negative-tone development using a developing solution containing an organic solvent, to form a resist pattern. The resist composition includes a polymeric compound having at least two kinds of specific structural units.

Abstract: A method of forming a resist pattern including: forming a resist film on a substrate using a resist composition containing a base component (A) which exhibits decreased solubility in an organic solvent by action of an acid; exposing the resist film; and patterning by a negative-tone development using a developing solution containing the organic solvent, wherein the base component (A) contains a resin component (A1) having a structural unit (a0) which generates acid upon exposure and a structural unit (a1) derived from an acrylate ester which may have the hydrogen atom bonded to the carbon atom on the ?-position substituted with a substituent and contains an acid decomposable group which exhibits increased polarity by the action of acid, and the developing solution contains a nitrile solvent.

Abstract: A resist composition including a base component (A) which exhibits changed solubility in a developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) containing a polymeric compound (A1) having a structural unit (a5) represented by general formula (a5-0) shown below (R1 represents a sulfur atom or an oxygen atom; R2 represents a single bond or a divalent linking group; and Y represents an aromatic hydrocarbon group or an aliphatic hydrocarbon group having a polycyclic group, provided that the aromatic hydrocarbon group or the aliphatic hydrocarbon may have a carbon atom or a hydrogen atom thereof substituted with a substituent.

Abstract: A resist composition which generates acid upon exposure and exhibits changed solubility in an alkali developing solution under action of acid, the resist composition including a polymeric compound containing a base decomposable group in a main chain thereof.

Abstract: A resist composition which can form a very fine resist pattern with excellent lithography properties, a new polymeric compound useful for the resist composition, and a compound useful as a monomer for the polymeric compound. The resist composition contains a polymeric compound containing a structural unit (a0) represented by general formula (a0) shown below. In the formula (a0), A is an anion represented by the general formula (1) or (2).

Abstract: A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, including a base component (A) which exhibits changed solubility in a developing solution under action of acid, the base component (A) including a polymeric compound (A1) containing a structural unit (a0) represented by general formula (a0-1) shown below. In the formula, W1 represents a group which is formed by polymerization reaction of a group containing a polymerizable group; Y1 and Y2 each independently represents a divalent linking group; Y3 represents a carbonyl group or an alkylene group; R2 and R3 each independently represents a fluorine atom or a fluorinated alkyl group; Mm+ represents an organic cation having a valency of m; and m represents an integer of 1 or more.