Abstract: A laterally structured avalanche photodetector and a manufacturing method therefor.

Abstract: Provided is a photoelectric detector, comprising: a silicon layer (110), the silicon layer (110) comprising a first-doping-type doped region (111); a germanium layer (120) in contact with the silicon layer (110), the germanium layer (120) comprising a second-doping-type doped region (121); and a silicon nitride waveguide (130), the silicon nitride waveguide (130) being arranged surrounding the germanium layer (120) along the extension directions of at least three side walls of the germanium layer (120), wherein the silicon nitride waveguide (130) is used for transmitting an optical signal and coupling the optical signal to the germanium layer (120), and the germanium layer (120) is used for detecting the optical signal and converting the optical signal into an electrical signal.

Abstract: Disclosed is a photodetector with a resonant waveguide structure, including: a substrate; a light absorption layer located on the substrate and configured for detecting an optical signal; a resonant waveguide structure including a first waveguide portion and a second waveguide portion spaced apart; the first waveguide portion receives the optical signal and transmits the received optical signal to a first region of the second waveguide portion, the second waveguide portion includes a second region for coupling the optical signal to the light absorption layer, and the second waveguide portion provides a circular transmission path for transmission of the optical signal to transmit the optical signal that transmitted to the first region to the second region along part of the circular transmission path and retransmit the optical signal that flows through the second region without being coupled to the light absorption layer to the second region along the circular transmission path.

Abstract: The present disclosure provides an avalanche photodetector and a preparation method therefor.

Abstract: A photodetector, comprising a flat slab structure (1), a waveguide structure (6), a light trapping structure (2), an absorption structure (3), a first electrode structure (4) and a second electrode structure (5), wherein the waveguide structure (6) extends into the light trapping structure (2), and a first edge where a first side wall of the waveguide structure (6) is located is tangent to a second edge where a second side wall in outer side walls of the light trapping structure (2) is located; the waveguide structure (6) is used for guiding incident light into the light trapping structure (2) in a direction tangent to the second edge; the guided light is trapped in the light trapping structure (2) by means of total internal reflection of the side walls of the light trapping structure (2) for annular transmission, and the guided light is coupled into the absorption structure (3) by means of the light trapping structure (2); the first electrode structure (4) is located in the light trapping structure (2); the

Abstract: Embodiments of the present disclosure provide a photodetector, comprising a waveguide structure, a light limiting structure, and an absorption structure. The waveguide structure extends into the light limiting structure, and a first edge where a first side wall of the waveguide structure is located is tangent to a second edge where a second side wall of the light limiting structure is located. The waveguide structure is used for introducing incident light into the light limiting structure in a direction tangent to the first edge. The introduced light is limited in the light limiting structure for annular transmission by means of total reflection of a side wall of the light limiting structure, and the introduced light is coupled into the absorption structure by means of the light limiting structure. The absorption structure is located on the light limiting structure.

Abstract: A laterally structured avalanche photodetector and a manufacturing method therefor.

Abstract: Provided is a photoelectric detector, comprising: a silicon layer (110), the silicon layer (110) comprising a first-doping-type doped region (111); a germanium layer (120) in contact with the silicon layer (110), the germanium layer (120) comprising a second-doping-type doped region (121); and a silicon nitride waveguide (130), the silicon nitride waveguide (130) being arranged surrounding the germanium layer (120) along the extension directions of at least three side walls of the germanium layer (120), wherein the silicon nitride waveguide (130) is used for transmitting an optical signal and coupling the optical signal to the germanium layer (120), and the germanium layer (120) is used for detecting the optical signal and converting the optical signal into an electrical signal.

Abstract: Disclosed is a photodetector with a resonant waveguide structure, including: a substrate; a light absorption layer located on the substrate and configured for detecting an optical signal; a resonant waveguide structure including a first waveguide portion and a second waveguide portion spaced apart; the first waveguide portion receives the optical signal and transmits the received optical signal to a first region of the second waveguide portion, the second waveguide portion includes a second region for coupling the optical signal to the light absorption layer, and the second waveguide portion provides a circular transmission path for transmission of the optical signal to transmit the optical signal that transmitted to the first region to the second region along part of the circular transmission path and retransmit the optical signal that flows through the second region without being coupled to the light absorption layer to the second region along the circular transmission path.

Abstract: A polarization converter based on taking a high-order TE mode as a transition mode comprises a ridge waveguide (1) and a slab waveguide (2) that are arranged in double layers and varying in width, and a strip waveguide (4) which is varying in width. The ridge waveguide (1) is disposed on the upper end face of the slab waveguide (2), and is aligned with two ends of the slab waveguide (2). The right end of the ridge waveguide (1) and the slab waveguide (2) are connected with the strip waveguide (4) with the varying width. A TM0 mode enters from the left ends of the ridge waveguide and the slab waveguide, and is converted into a TE0 mode for output. On the contrary, the TE0 mode enters from the right end of the strip waveguide and is converted into the TM0 mode for output.

Abstract: An on-chip mode converter-based silicon-germanium photoelectric detection apparatus comprises an insulating substrate, an optical coupler, an on-chip mode converter and a multi-mode silicon-germanium photoelectric detector. The optical coupler, the converter and the photoelectric detector are sequentially connected and all fixed on silicon wafers of the insulating substrate. An incident fundamental mode optical signal is transmitted to the optical coupler through a single-mode fiber, enters the converter via the optical coupled. The converter converts the fundamental mode optical signal into a multi-mode optical field and enters the photoelectric detector, which converts the multi-mode optical field into an electrical signal. Heavily germanium-doped region are located in areas with relatively weak distributed light intensity of the multi-mode optical field.

Abstract: A broadband polarization beam splitter/combiner based on a gradient waveguide directional coupler, comprises a gradient waveguide directional coupler, a beam combining end (1), a curved waveguide (5), a TE mode end (6) and a TM mode end (7). The coupler consists of a straight end gradient waveguide (2) and a serial end gradient waveguide (3). The trend of change of the gradient waveguide (2) is opposite to the gradient waveguide (3), and a gap is provided between the gradient waveguide (2) and the gradient waveguide (3). The beam combining end (1) is connected with one end of the gradient waveguide (2), the other end of the gradient waveguide (2) is connected with one end of the curved waveguide (5), the other end of the curved waveguide (5) is connected with the TE end (6), and the waveguide (3) is connected with the TM end (7).

Abstract: The present invention discloses a GSG track-type radio-frequency electrode, a silicon-based traveling-wave electrode light modulator, and a preparation method, and relates to the field of high-speed electro-optical chips. The GSG track-type radio-frequency electrode includes a GSG-type planar electrode, where a track electrode used for delaying an electric field is periodically added to one side or dual sides of the GSG-type planar electrode, and the track electrode is connected to a ground electrode of the GSG-type planar electrode. The silicon-based traveling-wave electrode light modulator includes the GSG track-type radio-frequency electrode and a conventional silicon-based traveling-wave electrode light modulator, and the GSG track-type radio-frequency electrode is connected to an active region of the silicon-based traveling-wave electrode light modulator by using through holes between electrode layers.

Abstract: A polarization converter based on taking a high-order TE mode as a transition mode comprises a ridge waveguide (1) and a slab waveguide (2) that are arranged in double layers and varying in width, and a strip waveguide (4) which is varying in width. The ridge waveguide (1) is disposed on the upper end face of the slab waveguide (2), and is aligned with two ends of the slab waveguide (2). The right end of the ridge waveguide (1) and the slab waveguide (2) are connected with the strip waveguide (4) with the varying width. A TM0 mode enters from the left ends of the ridge waveguide and the slab waveguide, and is converted into a TE0 mode for output. On the contrary, the TE0 mode enters from the right end of the strip waveguide and is converted into the TM0 mode for output.

Abstract: An on-chip mode converter-based silicon-germanium photoelectric detection apparatus comprises an insulating substrate, an optical coupler, an on-chip mode converter and a multi-mode silicon-germanium photoelectric detector. The optical coupler, the converter and the photoelectric detector are sequentially connected and all fixed on silicon wafers of the insulating substrate. An incident fundamental mode optical signal is transmitted to the optical coupler through a single-mode fiber, enters the converter via the optical coupled. The converter converts the fundamental mode optical signal into a multi-mode optical field and enters the photoelectric detector, which converts the multi-mode optical field into an electrical signal. Heavily germanium-doped region are located in areas with relatively weak distributed light intensity of the multi-mode optical field.

Abstract: A broadband polarization beam splitter/combiner based on a gradient waveguide directional coupler, comprises a gradient waveguide directional coupler, a beam combining end (1), a curved waveguide (5), a TE mode end (6) and a TM mode end (7). The coupler consists of a straight end gradient waveguide (2) and a serial end gradient waveguide (3). The trend of change of the gradient waveguide (2) is opposite to the gradient waveguide (3), and a gap is provided between the gradient waveguide (2) and the gradient waveguide (3). The beam combining end (1) is connected with one end of the gradient waveguide (2), the other end of the gradient waveguide (2) is connected with one end of the curved waveguide (5), the other end of the curved waveguide (5) is connected with the TE end (6), and the waveguide (3) is connected with the TM end (7).

Abstract: The present invention discloses a GSG track-type radio-frequency electrode, a silicon-based traveling-wave electrode light modulator, and a preparation method, and relates to the field of high-speed electro-optical chips. The GSG track-type radio-frequency electrode includes a GSG-type planar electrode, where a track electrode used for delaying an electric field is periodically added to one side or dual sides of the GSG-type planar electrode, and the track electrode is connected to a ground electrode of the GSG-type planar electrode. The silicon-based traveling-wave electrode light modulator includes the GSG track-type radio-frequency electrode and a conventional silicon-based traveling-wave electrode light modulator, and the GSG track-type radio-frequency electrode is connected to an active region of the silicon-based traveling-wave electrode light modulator by using through holes between electrode layers.