Abstract: There is provided a technique that includes: (a) forming a non-flowable film on a surface of a substrate on which a recess is provided and an oxygen-containing film is exposed by supplying a first material to the substrate at a first temperature; and (b) forming a flowable film on the non-flowable film by supplying a second material to the substrate at a second temperature lower than the first temperature.

Abstract: There is provided a printing apparatus which includes the following: A printhead including a plurality of nozzles that discharge ink to a print medium. A first detection unit that detects a distance between the printhead and a platen. An adjustment unit that adjusts the distance between the printhead and the platen. An acquisition unit that acquires difference information concerning a difference of a distance between the platen and each of the nozzle on an upstream side and the nozzle on a downstream side in a conveyance direction of the print medium. The adjustment unit adjusts the distance based on a detection result of the first detection unit and the difference information acquired by the acquisition unit.

Abstract: An injection molding machine includes: a controller; components that are attachable to and detachable from the injection molding machine; and a storage medium that stores history information for each of the components, in which, in a case where the controller detects a change in attachment/detachment of a first component, the controller adds information indicating that the first component has been replaced to the history information, outputs an indication of initialization of the history information of the first component, or initializes the history information of the first component.

Abstract: A printing apparatus includes a carriage mounted with a printing unit; a first motor configured to move the carriage in a predetermined direction; a second motor configured to move the carriage in the predetermined direction; and a control unit. The control unit executes a first mode in which, when causing the printing unit to perform printing under a first printing condition, the first motor is driven in a first direction and the second motor is driven in the first direction, and a second mode in which, when causing the printing unit to perform printing under a second printing condition different from the first printing condition, the first motor is driven in the first direction and the second motor is driven in the first direction while changing an output ratio between the first motor and the second motor.

Abstract: There is provided a technique that includes (a) forming an oligomer-containing layer on a surface of a substrate and in a concave portion of the substrate by allowing an oligomer to be generated, grow, and flow on the surface of the substrate and in the concave portion of the substrate by performing a cycle a predetermined number of times at a first temperature, the cycle including: supplying a precursor gas to the substrate; supplying a first nitrogen- and hydrogen-containing gas to the substrate; supplying a second nitrogen- and hydrogen-containing gas to the substrate; and supplying a first modifying gas to the substrate; and (b) forming a film by performing a thermal treatment to the substrate at a second temperature equal to or higher than the first temperature to modify the oligomer-containing layer so as to be filled in the concave portion.

Abstract: A method for forming an oligomer-containing layer on a substrate and in a concave portion formed on the substrate by performing a cycle a predetermined number of times under a first temperature, the cycle including supplying a precursor gas to the substrate, and supplying first and second nitrogen- and hydrogen-containing gases to the substrate, so an oligomer including an element in at least one selected from the group of the precursor gas, and the first and second nitrogen-hydrogen-containing gasses, flowed in the concave portion, and (b) forming a film to fill the inside of the concave portion by post-treating the substrate, which has the oligomer-containing layer formed on the surface of the substrate and in the concave portion, under a second temperature not less than the first temperature, so that the oligomer-containing layer formed in the concave portion is modified to form the film.

Abstract: There is provided a technique that includes: (a) providing a substrate having a film containing a predetermined element, oxygen and carbon formed on a surface of the substrate; and (b) modifying at least a surface of the film by supplying a carbon-free fluorine-based gas to the substrate under a condition in which etching of the film does not occur.

Abstract: There is provided a technique that includes: (a) providing a substrate having a film containing a predetermined element, oxygen and carbon formed on a surface of the substrate; and (b) modifying at least a surface of the film by supplying a carbon-free fluorine-based gas to the substrate under a condition in which etching of the film does not occur.

Abstract: A film containing a prescribed element and carbon is formed on a substrate, by performing a cycle a prescribed number of times, the cycle including: supplying an organic-based source containing a prescribed element and a pseudo catalyst including at least one selected from the group including a halogen compound and a boron compound, into a process chamber in which the substrate is housed, and confining the organic-based source and the pseudo catalyst in the process chamber; maintaining a state in which the organic-based source and the pseudo catalyst are confined in the process chamber; and exhausting an inside of the process chamber.

Abstract: A film containing a prescribed element and carbon is formed on a substrate, by performing a cycle a prescribed number of times, the cycle including: supplying an organic-based source containing a prescribed element and a pseudo catalyst including at least one selected from the group including a halogen compound and a boron compound, into a process chamber in which the substrate is housed, and confining the organic-based source and the pseudo catalyst in the process chamber; maintaining a state in which the organic-based source and the pseudo catalyst are confined in the process chamber; and exhausting an inside of the process chamber.

Abstract: A substrate processing apparatus includes a process container, a process gas supply system, an exhaust system, and a control unit. The process container has inner and outer reaction tubes and a communication section connecting the insides of the reaction tubes. The inner reaction tube has a flat top inner surface at an upper end that covers at least part of a top surface of a substrate support. The process gas supply system supplies a process gas into the process container, and the exhaust system exhausts the process gas from the process container via the communication section and a space between the reaction tubes. The control unit controls a repeated cycle that includes: supplying the process gas into the process container; confining the process gas in the process container; and exhausting the process gas from the process container via the communication section and the space between the reaction tubes.

Abstract: A method of manufacturing a semiconductor device includes forming thin films on substrates by performing a cycle a predetermined number of times. The cycle includes: supplying a process gas into a process container and confining the gas in the container including an outer reaction tube and an inner reaction tube having a flat top inner surface at an upper end portion covering a portion of a top surface of the support arranging and supporting the substrates and including a communication section connecting an inside of the inner reaction tube to an inside of the outer reaction tube, wherein the communication section is disposed at a region other than a region horizontally encompassing a substrate arrangement region; maintaining a state where the gas is confined in the container; and exhausting the gas from the container via the communication section and a space between the inner and outer reaction tubes.

Abstract: A method of manufacturing a semiconductor device includes forming thin films on substrates by performing a cycle a predetermined number of times. The cycle includes: supplying a process gas into a process container and confining the gas in the container including an outer reaction tube and an inner reaction tube having a flat top inner surface at an upper end portion covering a portion of a top surface of the support arranging and supporting the substrates and including a communication section connecting an inside of the inner reaction tube to an inside of the outer reaction tube, wherein the communication section is disposed at a region other than a region horizontally encompassing a substrate arrangement region; maintaining a state where the gas is confined in the container; and exhausting the gas from the container via the communication section and a space between the inner and outer reaction tubes.