Patents by Inventor Daihei Kajiwara

Daihei Kajiwara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6007673
    Abstract: A semiconductor substrate which is placed on a bottom electrode inside a chamber is dry-etched by creating plasma inside the chamber. By making the average surface roughness Ra of the bottom surface of a quartz-top plate placed on the bottom electrode be in a range of 0.2 to 5 .mu.m, adhesion between the quartz-top plate and the deposits caused by the dry etching is enhanced, and the number of particles suspended in the chamber is reduced. Furthermore, the function of enhancing the adhesion of deposits can be maintained even after cleaning of the quartz-top plate. As a result, the number of particles which adhere onto the semiconductor substrate is reduced and the semiconductor substrate can be processed in an extremely clean atmosphere.
    Type: Grant
    Filed: October 1, 1997
    Date of Patent: December 28, 1999
    Assignee: Matsushita Electronics Corporation
    Inventors: Shunsuke Kugo, Hideo Nikoh, Tomoyuki Sasaki, Hideo Ichimura, Daihei Kajiwara, Shoji Matsumoto, Satoshi Nakagawa