Abstract: An electron beam type substrate inspection apparatus (1) capable of inspecting an inspection substrate (8) in a short time is provided. It includes means (11)(12) for scanning an electron beam (9) within an inspection region on the inspection substrate (8), means (7) for detecting a signal generated from the inspection substrate (8); means (13) for visualizing with a scanning position on the inspection substrate (8) and the signal being related with each other, means (15a) for generating on a layout at least one of a die region indicating a region where a plurality of semiconductor apparatuses are present, a logical circuit region indicating a region where logical circuits are present, a memory circuit region where the memory circuits are present, and a peripheral circuit region indicating a region where peripheral circuits are present, and means (15b) for setting the inspection region with the generated regions.

Abstract: An object of the present invention is to provide an apparatus and a method of semiconductor defect inspection in which an optimal process condition can be determined without performing electrical evaluation. To achieve the object, the present invention includes a configuration in which the type of an extracted defect is identified with reference to a database that stores the types of defects obtained by inspecting a sample, a defect density according to each defect type is obtained for each region of the sample, and the defect density is displayed. Moreover, the present invention includes a configuration in which the type of an extracted defect is identified with reference to a database that stores the types of defects obtained by inspecting a sample, a defect density according to each defect type is determined for each production process of the sample, and the defect density is displayed on a display.