Abstract: [Object] To provide a vertical cavity surface emitting laser device that is excellent in producibility and capable of reducing the production cost and a method of producing the vertical cavity surface emitting laser device. [Solving Means] A vertical cavity surface emitting laser device (100) according to the present technology includes: a first reflection mirror (103); a second reflection mirror (109); a first semiconductor layer (104); a second semiconductor layer (106); a tunnel junction layer (107); and a light-emitting layer (105), the vertical cavity surface emitting laser device (100) having a mesa structure (M) that has a current injection region where a current passing through an inner peripheral region and flowing into the light-emitting layer (105) concentrates.

Abstract: [Object] To provide a vertical cavity surface emitting laser element that has excellent producibility and is suitable for high output and a method of producing the vertical cavity surface emitting laser element. [Solving Means] A vertical cavity surface emitting laser element according to the present technology includes: a first DBR; a second BR; an active layer; and a tunnel junction layer. The first DBR reflects light of a specific wavelength. The second DBR reflects light of the wavelength. The active layer is disposed between the first DBR and the second DBR. The tunnel junction layer is disposed between the first DBR and the active layer and forms a tunnel junction.

Abstract: A method of manufacturing a semiconductor laser device includes: forming an n-type nitride semiconductor layer; forming a first layer comprising InaGa1-aN (0<a<1) above the n-type nitride semiconductor layer; forming a second layer and a third layer above the first layer; forming an active layer having a single quantum well structure or a multiple quantum well structure above the second layer and the third layer; and forming a p-type nitride semiconductor layer above the active layer.

Abstract: A method of manufacturing a semiconductor laser device includes: forming an n-type nitride semiconductor layer; forming a first layer comprising InaGa1-aN (0<a<1) above the n-type nitride semiconductor layer; forming a second layer and a third layer above the first layer; forming an active layer having a single quantum well structure or a multiple quantum well structure above the second layer and the third layer; and forming a p-type nitride semiconductor layer above the active layer.

Abstract: A semiconductor laser device includes an n-type nitride semiconductor layer; a first layer disposed above the n-type nitride semiconductor and composed of InaGa1-aN (0?a<1); a second layer disposed above the first layer and composed of InbGa1-bN (0<b<1, a<b), the second layer having a thickness smaller than that of the first layer and containing an n-type impurity; a third layer composed of IncGa1-cN (0?c<1, c<b) and having a thickness smaller than that of the second layer, the third layer being disposed on (i) a surface of the second layer on the active layer side and/or (ii) a surface of the second layer on the first layer side; an active layer disposed above the second layer and the third layer, and having a single quantum well structure or a multiple quantum well structure; and a p-type nitride semiconductor layer disposed above the active layer.

Abstract: A semiconductor laser device includes an n-type nitride semiconductor layer; a first layer disposed above the n-type nitride semiconductor and composed of InaGa1-aN (0?a<1); a second layer disposed above the first layer and composed of InbGa1-bN (0<b<1, a<b), the second layer having a thickness smaller than that of the first layer and containing an n-type impurity; a third layer composed of IncGa1-cN (0?c<1, c<b) and having a thickness smaller than that of the second layer, the third layer being disposed on (i) a surface of the second layer on the active layer side and/or (ii) a surface of the second layer on the first layer side; an active layer disposed above the second layer and the third layer, and having a single quantum well structure or a multiple quantum well structure; and a p-type nitride semiconductor layer disposed above the active layer.

Abstract: A bobbin changing apparatus for a flyer frame which allows works to freely be performed by attendants at a front side of the flyer frame at any time during the operation of the flyer frame, while eliminating need for providing independent rails for transporting full bobbins and empty bobbins, respectively. Disposed at a front side of a flyer frame (2) is a work platform (35) on which the number of pegs (49) which is twice as large as that of bobbin wheels are mounted with a pitch equal to a half of that of the bobbin wheels (4). Each of the pegs (49) can selectively be disposed at an operative position on a top surface of a cover plate (41) and to a retracted position retracted from the top surface. Further, the pegs can be driven reciprocatively over a distance corresponding to one pitch of the peg array.