Patents by Inventor Daijiro AKAGI

Daijiro AKAGI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220299862
    Abstract: A reflective mask blank for EUV lithography includes, in the following order, a substrate, a multilayer reflective film for reflecting EUV light, a phase shift film for shifting a phase of EUV light, and an etching mask film. The phase shift film is constituted of a ruthenium-based material containing ruthenium as a main component. The phase shift film has a film thickness of 20 nm or larger. The etching mask film is removable with a cleaning liquid comprising an acid or a base.
    Type: Application
    Filed: June 8, 2022
    Publication date: September 22, 2022
    Applicant: AGC Inc.
    Inventors: Daijiro AKAGI, Hirotomo KAWAHARA, Hiroyoshi TANABE, Toshiyuki UNO
  • Publication number: 20220035234
    Abstract: A reflective mask blank for EUV lithography includes: a substrate; a multilayer reflective film for reflecting EUV light; and a phase shift film for shifting a phase of EUV light, the multilayer reflective film and the phase shift film formed on or above the substrate in this order. The phase shift film includes a layer 1 including ruthenium (Ru) and at least one selected from the group consisting of oxygen (O) and nitrogen (N). Among diffraction peaks derived from the phase shift film observed at 2?: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half value width FWHM of 1.0° or more.
    Type: Application
    Filed: July 22, 2021
    Publication date: February 3, 2022
    Applicant: AGC Inc.
    Inventors: Daijiro AKAGI, Hirotomo KAWAHARA, Toshiyuki UNO, Ichiro ISHIKAWA, Kenichi SASAKI
  • Publication number: 20210325772
    Abstract: A reflective mask blank for EUV lithography includes a substrate, a reflective layer for reflecting EUV light, and an absorption layer for absorbing EUV light. The reflective layer and the absorption layer are formed on or above the substrate in this order. The absorption layer contains tantalum (Ta) and niobium (Nb), and the absorption layer has a composition ratio Ta:Nb of Ta (at %) to Nb (at %) of from 4:1 to 1:4. Among diffraction peaks derived from the absorption layer observed at 2?: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half width FWHM of 1.0° or more.
    Type: Application
    Filed: April 20, 2021
    Publication date: October 21, 2021
    Applicant: AGC Inc.
    Inventors: Hirotomo KAWAHARA, Hiroyoshi TANABE, Toshiyuki UNO, Hiroshi HANEKAWA, Daijiro AKAGI