Abstract: A surface-emitting semiconductor laser includes a first-conductivity-type layer, an active layer, and a second-conductivity-type layer. The active layer and the second-conductivity-type layer are electrically connected in a current constriction layer through an opening. The surface-emitting semiconductor laser further includes an insulating layer that has translucency with respect to an emission wavelength of the active layer, a first electrode electrically connected to the first-conductivity-type layer, and a second electrode electrically connected to the second-conductivity-type layer.

Abstract: A surface emitting laser device includes: a first semiconductor layer of a first conductive type; a second semiconductor layer including a first light reflecting layer of the first conductive type, a light generating layer, and a second light reflecting layer of a second conductive type, which are laminated in this order from a first semiconductor layer side; a laser diode structure partitioned in a plateau shape including a top surface by a removal portion in which the second semiconductor layer is dug down, and configured to emit a laser beam to the first semiconductor layer side; a first insulating layer formed inside the laser diode structure; and a second insulating layer covering the top surface.

Abstract: A surface-emitting semiconductor laser includes a semiconductor laminated structure that includes a first-conductivity-type layer, an active layer, and a second-conductivity-type layer and in which light generated in the active layer is extracted as laser light from a side of the second-conductivity-type layer while resonating along a lamination direction of these layers, a current constriction layer in which the active layer and the second-conductivity-type layer are electrically connected together through an opening, an insulating layer that has translucency with respect to an emission wavelength of the active layer, a first electrode electrically connected to the first-conductivity-type layer, and a second electrode electrically connected to the second-conductivity-type layer, and, in the surface-emitting semiconductor laser, a part of the insulating layer is exposed from the second electrode, and the insulating layer exposed from the second electrode includes a first portion that has a first thickness and

Abstract: A surface emitting laser element includes a first distribution Bragg reflector (DBR) layer having a first conductivity type; a second DBR layer having a second conductivity type opposite to the first conductivity type; an active layer located between the first DBR layer and the second DBR layer; an insulating layer formed over the second DBR layer; and a surface conductive layer formed over the insulating layer. In the surface emitting laser element, a first opening, which exposes the insulating layer and overlaps with the active layer when viewed in a thickness direction of the first DBR layer, is formed in the surface conductive layer, and the first opening extends when viewed in the thickness direction.

Abstract: A surface emitting laser element includes a first distribution Bragg reflector (DBR) layer having a first conductivity type; a second DBR layer having a second conductivity type opposite to the first conductivity type; an active layer located between the first DBR layer and the second DBR layer; an insulating layer formed over the second DBR layer; and a surface conductive layer formed over the insulating layer. In the surface emitting laser element, a first opening, which exposes the insulating layer and overlaps with the active layer when viewed in a thickness direction of the first DBR layer, is formed in the surface conductive layer, and the first opening extends when viewed in the thickness direction.